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AP4435D中文资料

AP4435D中文资料
AP4435D中文资料

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

▼ Low On-resistance BV DSS -30V ▼ Fast Switching Speed R DS(ON)20m

Ω▼ PDIP-8 Package

I D

-9A

Description

Absolute Maximum Ratings

Symbol Units V DS V V GS

V I D @T A =25℃A I D @T A =70℃A I DM

A P D @T A =25℃W W/℃T STG ℃T J

Symbol Value Unit Rthj-a

Thermal Resistance Junction-ambient 3

Max.

50

℃/W

Data and specifications subject to change without notice

Thermal Data

Parameter

Total Power Dissipation 2.5-55 to 150Operating Junction Temperature Range

-55 to 150

Linear Derating Factor 0.02Storage Temperature Range

Continuous Drain Current 3- 5.8Pulsed Drain Current 1- 50Parameter

Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3201114031

AP4435D

Rating - 30±20- 9The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, lower on-resistance and cost-effectiveness.

D

D D

D

S

S S

G PDIP-8

Electrical Characteristics@T j =25o C(unless otherwise specified)

Symbol Parameter

Test Conditions Min.Typ.Max.

Units BV DSS

Drain-Source Breakdown Voltage

V GS =0V, I D =-250uA

-30--V ΔB V DSS /ΔT j

Breakdown Voltage Temperature Coefficient Reference to 25℃, I D =-1mA --0.03

-V/℃R DS(ON)Static Drain-Source On-Resistance 2V GS =-10V, I D =-9A --20m ΩV GS =-4.5V, I D =-5A --35m ΩV GS(th)Gate Threshold Voltage V DS =V GS , I D =-250uA -1--3V g fs Forward Transconductance

V DS =-10V, I D =-9A -8.2-S I DSS Drain-Source Leakage Current (T j =25o C)V DS =-30V, V GS =0V ---1uA Drain-Source Leakage Current (T j =70o C)

V DS =-24V, V GS =0V ---25uA I GSS Gate-Source Leakage V GS =--nA Q g Total Gate Charge 2I D =-9.0A -2642nC Q gs Gate-Source Charge V DS =-24V -6-nC Q gd Gate-Drain ("Miller") Charge V GS =-4.5V -16-nC t d(on)Turn-on Delay Time 2V DS =-15V -14-ns t r Rise Time

I D =-1A

-13-ns t d(off)Turn-off Delay Time R G =3.3Ω,V GS =-10V -70-ns t f Fall Time R D =15Ω-48-ns C iss Input Capacitance V GS =0V -13302100

pF C oss Output Capacitance

V DS =-25V -580-pF C rss

Reverse Transfer Capacitance

f=1.0MHz

-

160

-pF

Source-Drain Diode

Symbol Parameter

Test Conditions

Min.Typ.Max.Units V SD Forward On Voltage 2

I S =-9.0A, V GS =0V ---1.2V t rr Reverse Recovery Time I S =-9.0A, V GS =0V,-44-ns Q rr

Reverse Recovery Charge

dI/dt=100A/μs

-

70

-nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Mounted on min. copper pad , t <10sec.

AP4435D

± 20V ±100

AP4435D

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode

Junction Temperature

Fig 7. Gate Charge Characteristics

Fig10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

AP4435D

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