P-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Low On-resistance BV DSS -30V ▼ Fast Switching Speed R DS(ON)20m
Ω▼ PDIP-8 Package
I D
-9A
Description
Absolute Maximum Ratings
Symbol Units V DS V V GS
V I D @T A =25℃A I D @T A =70℃A I DM
A P D @T A =25℃W W/℃T STG ℃T J
℃
Symbol Value Unit Rthj-a
Thermal Resistance Junction-ambient 3
Max.
50
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation 2.5-55 to 150Operating Junction Temperature Range
-55 to 150
Linear Derating Factor 0.02Storage Temperature Range
Continuous Drain Current 3- 5.8Pulsed Drain Current 1- 50Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3201114031
AP4435D
Rating - 30±20- 9The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, lower on-resistance and cost-effectiveness.
D
D D
D
S
S S
G PDIP-8
Electrical Characteristics@T j =25o C(unless otherwise specified)
Symbol Parameter
Test Conditions Min.Typ.Max.
Units BV DSS
Drain-Source Breakdown Voltage
V GS =0V, I D =-250uA
-30--V ΔB V DSS /ΔT j
Breakdown Voltage Temperature Coefficient Reference to 25℃, I D =-1mA --0.03
-V/℃R DS(ON)Static Drain-Source On-Resistance 2V GS =-10V, I D =-9A --20m ΩV GS =-4.5V, I D =-5A --35m ΩV GS(th)Gate Threshold Voltage V DS =V GS , I D =-250uA -1--3V g fs Forward Transconductance
V DS =-10V, I D =-9A -8.2-S I DSS Drain-Source Leakage Current (T j =25o C)V DS =-30V, V GS =0V ---1uA Drain-Source Leakage Current (T j =70o C)
V DS =-24V, V GS =0V ---25uA I GSS Gate-Source Leakage V GS =--nA Q g Total Gate Charge 2I D =-9.0A -2642nC Q gs Gate-Source Charge V DS =-24V -6-nC Q gd Gate-Drain ("Miller") Charge V GS =-4.5V -16-nC t d(on)Turn-on Delay Time 2V DS =-15V -14-ns t r Rise Time
I D =-1A
-13-ns t d(off)Turn-off Delay Time R G =3.3Ω,V GS =-10V -70-ns t f Fall Time R D =15Ω-48-ns C iss Input Capacitance V GS =0V -13302100
pF C oss Output Capacitance
V DS =-25V -580-pF C rss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-pF
Source-Drain Diode
Symbol Parameter
Test Conditions
Min.Typ.Max.Units V SD Forward On Voltage 2
I S =-9.0A, V GS =0V ---1.2V t rr Reverse Recovery Time I S =-9.0A, V GS =0V,-44-ns Q rr
Reverse Recovery Charge
dI/dt=100A/μs
-
70
-nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on min. copper pad , t <10sec.
AP4435D
± 20V ±100
AP4435D
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
Fig 7. Gate Charge Characteristics
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
AP4435D