APTGT50SK170D1中文资料
APTGT50SK170D1
70D 1 – R e v 0 J a n u a r y , 2004
Absolute maximum ratings
Symbol Parameter Max ratings
Unit V CES Collector - Emitter Breakdown Voltage
1700 V
T C = 25°C 70 I C Continuous Collector Current T C = 80°C 50 I CM Pulsed Collector Current
T C = 25°C 100 A V GE Gate – Emitter Voltage
±20 V P D
Maximum Power Dissipation
T C = 25°C 310 W RBSOA Reverse Bias Safe Operation Area
T j = 125°C
100A@1700V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1
2
3
Q2
67
6
754
V CES = 1700V
I C = 50A @ Tc = 80°C
Application ? AC and DC motor control
? Switched Mode Power Supplies Features
? Trench + Field Stop IGBT ? Technology
- Low voltage drop - Low tail current
- Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF
- Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ? Kelvin emitter for easy drive ? Low stray inductance ? High level of integration ? Kelvin emitter for easy drive ? Low stray inductance
- M5 power connectors Benefits
? Stable temperature behavior ? Very rugged
? Direct mounting to heatsink (isolated
package)
? Low junction to case thermal resistance ? Easy paralleling due to positive TC of
VCEsat
Buck chopper
Trench IGBT ? Power Module
APTGT50SK170D1
70D 1 – R e v 0 J a n u a r y , 2004
All ratings @ T j = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit BV CES Collector - Emitter Breakdown Voltage V GE = 0V, I C = 2.5mA 1700
V I CES Zero Gate Voltage Collector Current V GE = 0V, V CE = 1700V
6 mA T j = 25°C 2.0 2.4
V CE(on) Collector Emitter on Voltage V GE = 15V
I C = 50A T j = 125°C 2.4 V V GE(th) Gate Threshold Voltage
V GE = V CE , I C = 2.5mA 5.2 5.8 6.4 V I GES
Gate – Emitter Leakage Current
V GE = 20V, V CE = 0V
600 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions
Min Typ Max Unit C ies Input Capacitance
4400
C res Reverse Transfer Capacitance V GE = 0V, V CE = 25V f = 1MHz
150 pF
T d(on) Turn-on Delay Time 200 T r Rise Time
100
T d(off) Turn-off Delay Time 750 T f Fall Time
Inductive Switching (25°C) V GE = ±15V V Bus = 900V I C = 50A R G = 22?
90 ns
T d(on) Turn-on Delay Time 230 T r Rise Time
100 T d(off) Turn-off Delay Time 850 T f Fall Time 115 ns
E off Turn Off Energy
Inductive Switching (125°C) V GE = ±15V V Bus = 900V I C = 50A R G = 22?
22
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit T j = 25°C 1.8 2.2
V F Diode Forward Voltage I F = 50A V GE = 0V T j = 125°C 1.9 V T j = 25°C 9
E r Reverse Recovery Energy I
F = 50A V R = 900V di/dt =990A/μs T j = 125°C 16 mJ T j = 25°C 19 Q rr Reverse Recovery Charge
I F = 50A V R = 900V di/dt =990A/μs
T j = 125°C
30
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ Max Unit IGBT
0.40 R thJC Junction to Case
Diode
0.70 °C/W V ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3500
V
T J Operating junction temperature range
-40 150 T STG Storage Temperature Range -40 125 T C Operating Case Temperature
-40 125 °C For terminals M5
2 3.5 Torque Mounting torque
To Heatsink M6
3 5 N.m Wt Package Weight
180
g
APTGT50SK170D1
70D 1 – R e v 0 J a n u a r y , 2004
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522