ME9926

GENERAL DESCRIPTION

The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

FEATURES

● 20V/6.0A,R DS(ON)=29m ?@V GS =4.5V ● 20V/5.2A,R DS(ON)=42m ?@V GS =2.5V

● Super high density cell design for extremely low R DS(ON) ● Exceptional on-resistance and maximum DC current capability

APPLICATIONS

● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC

● LCD Display inverter

PIN CONFIGURATION

(SOP-8) Top View

Absolute Maximum Ratings (T A =25℃ Unless Otherwise Noted)

Parameter Symbol Steady State Unit

Drain-Source Voltage V DSS 20 V

Gate-Source Voltage V GSS ±12 V

Continuous Drain Current I D 6 A

Pulsed Drain Current I DM 30 A T A =25℃ 2.0 Maximum Power Dissipation T A =70℃

P D 1.3 W Operating Junction Temperature

T J -55 to 150

℃ R θJA

T≦10 sec

55

℃/W Thermal Resistance-Junction to Ambient * Steady State 88

Thermal Resistance-Junction to Case

R θJC 50

℃/W

e * The device mounted on 1in 2 FR4 board with 2 oz copper

Electrical Characteristics (T A =25℃ Unless Otherwise Specified)

Symbol

Parameter Limit

Min Typ Max Unit

STATIC

BV DSS Drain-Source Breakdown Voltage V GS=0, I D =250μA 20 V V GS(th) Gate Threshold Voltage V DS =V GS , I D =250μA

0.6 1 V

I GSS Gate Body Leakage

V DS =0V, V GS =±12V ±100nA I DSS Zero Gate Voltage Drain Current V DS =20V, V GS =

0V 1 μA I D(ON)

On-State Drain Current

a

V DS ≧5V, V GS = 4.5V 30 A V GS =4.5V, I D = 6.0A 22 29 R DS(ON) Drain-Source On-Resistance V GS =2.5V, I D = 5.2A

32

42

m ?

V SD Diode Forward Voltage

I S =1.7A, V GS =

0V

0.74 1.2 V

DYNAMIC Qg

Total Gate Charge

7.9 Qgs Gate-Source Charge 2.4 Qgd Gate-Drain Charge V DS =10V, V GS =4.5V, I D =6.0A

2 nC Rg Gate resistance

V DS =0V, V GS =0V, f=1MHz 1.3 ? t d(on) 9.7 t r Turn-On Time

16.4 t d(off) 34.6 t f

Turn-Off Time

V DD =10V,I D =1.0A, V GEN =4.5V R G =6Ω

3.1 ns

Ciss Input capacitance

576 Coss Output Capacitance

83 Crss Reverse Transfer Capacitance

V DS =8V, V GS =0V, f=1.0MHz

22

pF

Notes a. Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%

Typical Characteristics (T J =25℃ Noted)

Typical Characteristics (T J =25℃ Noted)

SOP-8 Package Outline

MILLIMETERS

DIM

MIN MAX

A 1.35 1.75

A1 0.10 0.25

B 0.35 0.49

C 0.18 0.25

D 4.80 5.00

E 3.80 4.00

BSC

e 1.27

H 5.80 6.20

h 0.25 0.50

L 0.40 1.25

θ0°7°