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MJE15034G;MJE15035G;MJE15034;MJE15035;中文规格书,Datasheet资料

MJE15034G;MJE15035G;MJE15034;MJE15035;中文规格书,Datasheet资料
MJE15034G;MJE15035G;MJE15034;MJE15035;中文规格书,Datasheet资料

MJE15034 NPN,

MJE15035 PNP Complementary Silicon Plastic Power Transistors TO?220, NPN & PNP Devices

Complementary silicon plastic power transistors are designed for use as high?frequency drivers in audio amplifiers.

Features

?h FE= 100 (Min) @ I C = 0.5 Adc

= 10 (Min) @ I C = 2.0 Adc

?Collector?Emitter Sustaining V oltage ?

V CEO(sus)= 350 Vdc (Min) ? MJE15034, MJE15035?High Current Gain ? Bandwidth Product

f T = 30 MHz (Min) @ I C = 500 mAdc

?TO?220AB Compact Package

?Epoxy meets UL 94 V?0 @ 0.125 in

?ESD Ratings:Machine Model: C

Human Body Model: 3B

?Pb?Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit Collector?Emitter Voltage V CEO350Vdc Collector?Base Voltage V CB350Vdc Emitter?Base Voltage V EB 5.0Vdc

Collector Current? Continuous

? Peak I C 4.0

8.0

Adc

Base Current I

B 1.0Adc

Total Power Dissipation @ T C = 25_C Derate above 25_C P D50

0.40

W

W/_C

Total Power Dissipation @ T A = 25_C Derate above 25_C P D 2.0

0.016

W

W/_C

Operating and Storage Junction Temperature Range T

J, T stg–65 to +150_C

THERMAL CHARACTERISTICS

Characteristic Symbol Max

Unit

Thermal Resistance, Junction?to?Case R q JC 2.5_C/W Thermal Resistance, Junction?to?Ambient R q JA62.5_C/W Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

4.0 AMPERES

POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS Device Package Shipping

ORDERING INFORMATION

MJE15034TO?220AB50 Units / Rail

TO?220AB

CASE 221A

STYLE 1

MARKING DIAGRAM

MJE1503x=Device Code

x = 4 or 5

A=Location Code

Y=Year

WW=Work Week

G=Pb?Free Package

https://www.wendangku.net/doc/8a15581938.html,

MJE15035TO?220AB50 Units / Rail MJE15035G TO?220AB

(Pb?Free)

50 Units / Rail MJE15034G TO?220AB

(Pb?Free)

50 Units / Rail

ELECTRICAL CHARACTERISTICS (T C = 25_C unless otherwise noted)

Characteristic

Symbol Min Max Unit OFF CHARACTERISTICS Collector ?Emitter Sustaining Voltage (Note 1)

(I C = 10 mAdc, I B = 0)V CEO(sus)350?

Vdc

Collector Cutoff Current (V CB = 350 Vdc, I E = 0)I CBO

?10m Adc Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0)

I EBO ?

10

m Adc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I C = 0.1 Adc, V CE = 5.0 Vdc)

(I C = 0.5 Adc, V CE = 5.0 Vdc)(I C = 1.0 Adc, V CE = 5.0 Vdc)(I C = 2.0 Adc, V CE = 5.0 Vdc)h FE

1001005010?

???

?

Collector ?Emitter Saturation Voltage (I C = 1.0 Adc, I B = 0.1 Adc)

V CE(sat)?0.5Vdc Base ?Emitter On Voltage

(I C = 1.0 Adc, V CE = 5.0 Vdc)

V BE(on)?

1.0Vdc

DYNAMIC CHARACTERISTICS

Current Gain ? Bandwidth Product (Note 2)

(I C = 500 mAdc, V CE = 10 Vdc, f test = 1.0 MHz)

f T

30?

MHz

1.Pulse Test: Pulse Width v 300 m s, Duty Cycle v

2.0%.

2.f T = ?h fe ?? f test .

Figure 1. Power Derating T, TEMPERATURE (°C)

40

T C 20

60

P D , P O W E R D I S S I P A T I O N (W A T T S )

02.0T A 1.03.0

1.0

101001000

V CE , COLLECTOR ?EMITTER VOLTAGE (V)

I C , C O L L E C T O R C U R R E N T (A M P S )

Figure 2. Active Region Safe Operating Area

t, TIME (ms)

r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )

Figure 3. Thermal Response

0.01

0.1 1.010

I C , COLLECTOR CURRENT (AMPS)

V C E , C O L L E C T O R ?E M I T T E R V O L T A G E (V )

0.01

0.1 1.010I C , COLLECTOR CURRENT (AMPS)V C E , C O L L E C T O R ?E M I T T E R V O L T A G E (V )

0.01

0.1 1.010

I C , COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I N

0.01

0.1 1.010

I C , COLLECTOR CURRENT (AMPS)

h F E , D C C U R R E N T G A I N

0.01

0.1 1.010

I C , COLLECTOR CURRENT (AMPS)

h F E , D C C U R R E N T G A I N

0.01

0.1 1.010

I C , COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I N

Figure 4. DC Current Gain, V CE = 5.0 V

NPN MJE15034

Figure 5. DC Current Gain, V CE = 5.0 V

PNP MJE15035

Figure 6. DC Current Gain, V CE = 20 V

NPN MJE15034

Figure 7. DC Current Gain, V CE = 20 V

PNP MJE15035

Figure 8. V CE(sat)NPN MJE15034Figure 9. V CE(sat)PNP MJE15035

0.00.20.40.60.81.01.20.01

0.1 1.010

I C , COLLECTOR CURRENT (AMPS)

V B E (o n ), B A S E ?E M I T T E R V O L T A G E (V )

1.40.01

0.1 1.010

I C , COLLECTOR CURRENT (AMPS)B A S E ?E M I T T E R V O L T A G E (V )

Figure 10. V BE(sat)NPN MJE15034

Figure 11. V BE(sat)PNP MJE15035

0.01

0.1 1.010

I C , COLLECTOR CURRENT (AMPS)

B A

S E ?E M I T

T E R V O L T A G E (V )

Figure 12. V BE(on)NPN MJE15034

Figure 13. V BE(on)PNP MJE15035

0.00.20.40.60.81.01.2I C , COLLECTOR CURRENT (AMPS)f T , C U R R E N T B A N D W I D T H P R O D U C T (M H z )

0.1 1.0I C , COLLECTOR CURRENT (AMPS)

f T , C U R R E N T B A N D W I D T H P R O D U C T (M H z )

0.001

0.0110

Figure 14. Typical Current Gain Bandwidth Product

NPN MJE15034Figure 15. Typical Current Gain Bandwidth Product

PNP MJE15035

0.01

0.1 1.010I C , COLLECTOR CURRENT (AMPS)V B E (o n ), B A S E ?E M I T T E R V O L T A G E (V )

0.1

1.0

0.001

0.01

10

PACKAGE DIMENSIONS

TO ?220CASE 221A ?09ISSUE AG

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198

2.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.5700.62014.4815.75B 0.3800.4059.6610.28C 0.1600.190 4.07 4.82D 0.0250.0360.640.91F 0.1420.161 3.61 4.09G 0.0950.105 2.42 2.66H 0.1100.161 2.80 4.10J 0.0140.0250.360.64K 0.5000.56212.7014.27L 0.0450.060 1.15 1.52N 0.1900.210 4.83 5.33Q 0.1000.120 2.54 3.04R 0.0800.110 2.04 2.79S 0.0450.055 1.15 1.39T 0.2350.255 5.97 6.47U 0.0000.0500.00 1.27V 0.045--- 1.15---Z

---0.080

--- 2.04

F

SEATING PLANE

STYLE 1:

PIN 1.

BASE

2.COLLECTOR

3.EMITTER

4.

COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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