MASW-008153-TR3000中文资料

Features Functional Schematic

Pin Configuration 3

GND

GT1

GI1

7 GND Ground

8 RF Common Port

9 Ground

10 RF Ground

11 RF Ground

12 Ground

13 RF Port 2

14 GND Ground

GND

G2 RF Ground

V1

1

2

Parameter

Absolute Maximum

Input Power

(5 - 1000 MHz, 2.9 V Control)

+32 dBm Operating Voltage +8.5 volts Operating Temperature -40°C to +85°C

Storage Temperature

-65°C to +150°C

Absolute Maximum Ratings 5,6

5. Exceeding any one or combination of these limits may cause permanent damage.

6. M/A-COM does not recommend sustained operation near these survivability limits.

7. 1 = +2.9 to +5 V, 0 = 0 + 0.2 V.

Truth Table 7

V1 V2 RFC - RF1

RFC - RF2

1 0 On Off 0

1

Off

On

Electrical Specifications: T A = 25°C, Z 0 = 75 ?4, V C = 0 V / 2.9 V, P IN = 10 dBm

Parameter Test Conditions Units Min. Typ. Max. Insertion Loss 5 - 50 MHz 50 - 1000 MHz dB dB — — 0.9 1.0 — 1.2 Isolation 5 - 50 MHz 50 - 1000 MHz dB dB — 60 80 63 — — Return Loss (On) 5 - 50 MHz 50 - 1000 MHz dB dB — — 28 14 — — IP3 Two Tone, +10 dBm/tone, 6 MHz spacing, > 50 MHz

V C = 0 V / 2.9 V V C = 0 V / 5.0 V

dBm dBm — — 47 52 — — Trise, Tfall 10% to 90% RF, 90% to 10% RF

nS — 8 — Ton, Toff 50% control to 90% RF, 50% control to 10% RF

nS — 18 — Transients In Band mV — 70 — Control Current

|V C | = 2.9 V

μA

—

5

—

Return Loss (Off)

5 - 50 MHz 50 - 1000 MHz

dB dB — — 26 20 — — Application Schematic

4. External 0.01 μF DC blocking capacitors are required on all RF In/Out and RF ground ports. See Application Schematic.

3

Return Loss Off-state match

Insertion Loss RFC - RF2

Return Loss On-state match

Isolation RFC - RF2

Isolation RFC - RF1

Insertion Loss RFC - RF1

Typical Performance Curves

-2.0

-1.6

-1.2-0.8-0.4

020040060080010001200

Frequency (MHz)-2.0

-1.6

-1.2

-0.8

-0.4

020040060080010001200

Frequency (MHz)

-120.0

-90.0

-60.0-30.00.0

Frequency (MHz)-120

-90

-60

-30

Frequency (MHz)

-45.0

-33.7

-22.5

-11.2

0.0

Frequency (MHz)

-45.0

-33.7

-22.5-11.20.0

20040060080010001200

Frequency (MHz)

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

4