This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
August 2014DocID025819 Rev 21/16
STH15810-2
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET? F7
Power MOSFET in a H 2PAK-2 package
Datasheet preliminary data
Features
?100% avalanche tested ?Ultra low on-resistance
Applications
?Switching applications
Description
This N-channel Power MOSFETs utilize
STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code V DS R DS(on)max I D P TOT
STH15810-2
100 V
0.0039 Ω
110 A 250 W
Table 1. Device summary
Order code Marking Package Packaging STH15810-2
15810
H 2PAK-2
Tape and reel
https://www.wendangku.net/doc/8619030782.html,
Contents STH15810-2
Contents
1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STH15810-2Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value Unit V DS Drain-source voltage 100V V GS Gate- source voltage
±20V I D Drain current (continuous) at T C = 25 °C 110A I D Drain current (continuous) at T C = 100 °C 110A I DM (1)1.Pulse width is limited by safe operating area Drain current (pulsed) T C = 25 °C 440A P TOT Total dissipation at T C = 25 °C 250W E AS (2)2.Starting T j =25 °C, I D =30 A, V DD =50 V
Single pulse avalanche energy 495mJ T J Operating junction temperature -55 to 175
°C T stg
Storage temperature
°C
Table 3. Thermal data
Symbol Parameter
Value Unit R thj-case Thermal resistance junction-case max 0.6°C/W R thj-pcb (1)
1. When mounted on 1 inch2 FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max
35
°C/W
Electrical characteristics STH15810-2
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2 Electrical characteristics
(T C = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions
Min.Typ.
Max.
Unit V (BR)DSS
Drain-source
breakdown voltage V GS = 0, I D = 250 μA 100
V I DSS
Zero gate voltage drain current V GS = 0, V DS = 100 V 1μA V GS = 0,
V DS = 100 V, T C =125 °C 100μA I GSS Gate-body leakage current
V DS = 0, V GS = +20 V
100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 μA 2.5 4.5
V R DS(on)
Static drain-source on-
resistance
V GS = 10 V, I D = 55 A
0.00340.0039Ω
Table 5. Dynamic
Symbol Parameter Test conditions
Min.Typ.Max.Unit C iss Input capacitance V DS = 50 V, f = 1 MHz, V GS = 0
-8115-pF C oss Output capacitance -1510-pF C rss Reverse transfer capacitance -67-pF Q g Total gate charge V DD = 50 V, I D =110 A,V GS = 10 V (see Figure 14)
-117-nC Q gs Gate-source charge -47-nC Q gd
Gate-drain charge
-26
-nC
Table 6. Switching times
Symbol Parameter Test conditions
Min.Typ.Max.Unit t d(on)Turn-on delay time V DD = 50 V, I D = 55 A, R G = 4.7 Ω, V GS = 10 V (see Figure 13)
-33-ns t r Rise time
-57-ns t d(off)Turn-off delay time -72-ns t f
Fall time
-33
-ns
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STH15810-2
Electrical characteristics
Table 7. Source drain diode
Symbol Parameter
Test conditions
Min.Typ.
Max.Unit I SD Source-drain current -110A I SDM (1)1.Pulse width limited by safe operating area Source-drain current (pulsed)-440A V SD (2)2.Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Forward on voltage I SD = 110 A, V GS = 0
- 1.2
V t rr Reverse recovery time I SD = 110 A, di/dt = 100 A/μs V DD = 80 V, T J =150 °C (see Figure 15)
-70ns Q rr Reverse recovery charge -165nC I RRM
Reverse recovery current
- 4.7A
Electrical characteristics STH15810-2 2.1 Electrical characteristics (curves)
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STH15810-2Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs
Figure 11. Normalized V DS vs temperature
Figure 10. Normalized on-resistance vs
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Test circuits STH15810-2
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3 Test circuits
Figure 13. Switching times test circuit for
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test circuit
STH15810-2Package mechanical data 4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK? packages, depending on their level of environmental compliance. ECOPACK?
specifications, grade definitions and product status are available at: https://www.wendangku.net/doc/8619030782.html,.
ECOPACK? is an ST trademark.
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Package mechanical data STH15810-2
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STH15810-2Package mechanical data
Table 8. H2PAK-2 mechanical data
Dim.
mm
Min.Typ.Max.
A 4.30
-4.80
A10.030.20
C 1.17 1.37
e 4.98 5.18
E0.500.90
F0.780.85
H10.0010.40
H17.407.80
L15.3015.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.857.25
L4 1.5 1.7
M 2.6 2.9
R0.200.60
V0°8°
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Package mechanical data STH15810-2
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STH15810-2Packaging mechanical data 5 Packaging mechanical data
Table 9. H2PAK-2 tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min.Max.Min.Max.
A010.510.7A330
B015.715.9B 1.5
D 1.5 1.6C12.813.2
D1 1.59 1.61D20.2
E 1.65 1.85G24.426.4
F11.411.6N100
K0 4.8 5.0T30.4
P0 3.9 4.1
P111.912.1Base qty1000
P2 1.9 2.1Bulk qty1000
R50
T0.250.35
W23.724.3
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Packaging mechanical data STH15810-2 K0
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STH15810-2Revision history 6 Revision
history
Table 10. Document revision history
Date Revision Changes
22-Jan-20141First release. The part number previously included in datasheet DocID024972
25-Aug-20142Updated title and description in cover page.
Added E AS parameter in Table2: Absolute maximum ratings.
Minor text changes.
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STH15810-2
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