MMBT8050W中文资料

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications

Absolute Maximum Ratings (T a = 25 O C)

Parameter Symbol Value Unit

Collector Emitter Voltage V CEO 25 V Collector Base Voltage V CBO 40

V

Emitter Base Voltage V EBO 6 V Collector Current I C

600

mA

Power Dissipation P tot 200 mW Junction Temperature T j 150 O C Storage Temperature Range

T S

- 55 to + 150

O

C

Characteristics at T a = 25 O

C

Parameter Symbol

Min. Typ. Max. Unit DC Current Gain

at V CE = 1 V, I C = 100 mA

at V CE = 1 V, I C = 500 mA

MMBT8050CW MMBT8050DW

h FE h FE h FE

100 160 40

- - -

250 400 -

- - -

Collector Cutoff Current at V CB = 35 V

I CBO - - 100 nA Collector Saturation Voltage at I C = 500 mA, I B = 50 mA V CE(sat) - - 0.5 V Base Saturation Voltage at I C = 500 mA, I B = 50 mA

V BE(sat) -

- 1.2 V Collector Emitter Breakdown Voltage at I C = 2 mA

V (BR)CEO 25 - - V Collector Base Breakdown Voltage at I C = 10 μA

V (BR)CBO 40 - - V Emitter Base Breakdown Voltage at I E = 100 μA

V (BR)EBO

6 - - V

Gain Bandwidth Product

at V CE = 5 V, I C = 10 mA, f = 50 MHz f T - 100 - MHz Collector Base Capacitance at V CB = 10 V, f = 1 MHz C CBO - 12 - pF