HN9C09FE中文资料
High-Frequency Devices for Mobile Communications
PRODUCT GUIDE
4s High-Frequency Product Line
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The demand for high-frequency transition frequency (f T )transistors in the 7 GHz, 10 GHz and 12 GHz classes is increasing as a result of the ever-widening distribu-tion of personal mobile telephones, automobile tele-phones and other mobile communications equipment.Toshiba provides microwave transistors that support this range of frequencies.
There are two models available for use in high-fre-quency amplifiers that require low-noise levels, in mix-ers and in oscillation circuit transistors: a high-current model and a low-current model. These products pro-vide higher levels of reliability and precision in com-parison with conventional products, and also support h FE rank.
The new f T = 16 GHz series are also now been added to our product line.
q Transistors for Use in VHF to UHF Band Low-Noise Amplifiers and Mixers
The high-current model and the low-current model are both available for the 7 GHz, the 10 GHz and the 12 GHz bands to offer a variety of alternatives. The h FE rank is not available for the 16 GHz and 18 GHz band.
s Transistors for Use in VHF to UHF Band Low-Noise Amplifiers and Mixers
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f T = 7 GHz Band Transistors: 2SC5084, 2SC5064, 2SC5463 and MT3S04A Series
q Low-voltage device are added to the current product
line.
q Low noise, high gain
q Suitable for use in VHF and UHF band high-
frequency amplifiers, mixers and oscillating
circuits
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f T = 10 GHz Band Transistors: 2SC5089, 2SC5094 and MT3S03A Series
q Low-voltage device are added to the current product line.
q Low noise, high gain
q Suitable for use in UHF band low-noise amplifiers,mixers and oscillating circuits
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s Product Line
s High-Frequency Characteristics (typ.)
f T = 12 GHz Band Transistors: 2SC5254, 2SC5259 and MT3S07 Series
q Low-noise and for amplifiers
q Both high-current and low-current products available
q Supports R and O ranks
q Suitable for 1-GHz to 2-GHz applications
Microwave Transistors
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s New Microwave Transistors
A variety of product line is available such as low-current, high-current or multi-chip types.
Microwave Transistors
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GaAs Devices
GaAs Dual-Gate MESFETs: 3SK240 and 3SK320 q Low-voltage and low-current operations
3SK240: V DS = 3 V, I D = 5 mA (P D = 15 mW)
3SK320: V DS = 3 V, I D = 5 mA (P D = 15 mW)
q Suitable for UHF band high-frequency amplifi-
ers, mixers and oscillating circuits
s High-Frequency Characteristics (typ.)
RF Power MOSFETs: 2SK2854 and 2SK2855
q For 900 MHz mobile telephones
q6 V operations
q High efficiency (Typ. 50%)
q High gain
2SK2854
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RF Power MOSFETs: 2SK3074 and 2SK3075
q For 520 MHz amateur and professional use radio transmitter q9.6 V and 12.5 V operations
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RF Power MOSFETs: 2SK3077, 2SK3078 and 2SK3079
q For 900 MHz cellular phones q 4.8 V operations
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Toshiba's high-frequency cell-packs are high-frequency inte-grated circuits that include certain circuits necessary for mobile communications equipment, such as amplifiers and mixers.Their design has been simplified to attain low power consump-tion levels and compact sizes.
q Bipolar Linear ICs
The f T = 10 GHz transistor process uses SMART (Silicon Monolithic Architecture for RF Technology) as the fundamental process. Achievement of excellent high-frequency operation with low power consumption creates favorably biased circuit constants and make these devices highly suitable in a variety of transistor applications.
High-Frequency Cell-Packs