AO4466

AO4466
30V N-Channel MOSFET
General Description
The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Product Summary
VDS (V) = 30V ID = 10A RDS(ON) < 23m? RDS(ON) < 35m? 100% UIS Tested 100% Rg Tested (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
SOIC-8 Top View D D D D Bottom View D
G S S S
G S
Absolute Maximum Ratings TA=25° unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25° C Power Dissipation Avalanche Current B, G Repetitive avalanche energy 0.1mH
B, G
Maximum 30 ±20 10 7 64 3.1 2 12 7 -55 to 150
Units V V A
VGS TA=25° C TA=70° C ID IDM TA=70° C PD IAR EAR TJ, TSTG
W A mJ ° C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 34 62 18
Max 40 75 24
Units ° C/W ° C/W ° C/W
Alpha & Omega Semiconductor, Ltd.

AO4466
Electrical Characteristics (TJ=25° unless otherwise noted) C Symbol Parameter Conditions ID=250μA, VGS=0V VDS=30 VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250μA VGS=4.5V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance Diode Forward Voltage VDS=5V, ID=10A IS=1A,VGS=0V TJ=125° C 1.5 64 16.7 24.3 23.7 17 0.75 1 2.4 298 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 46 24 0.6 5.7 VGS=10V, VDS=15V, ID=10A 2.7 373 67 41 1.8 7.1 3.5 1.2 1.6 4.3 VGS=10V, VDS=15V, RL=1.5?, RGEN=3? IF=10A, dI/dt=100A/μs 8.4 3.6 4.7 5.3 2.8 15.8 3 10.5 4.5 6.0 6.6 12.6 5.4 7.2 8 448 88 58 2.8 8.6 4.2 23 30 35 2.1 Min 30 1 5 100 2.6 Typ Max Units V μA nA V A m? m? S V A pF pF pF ? nC nC nC nC ns ns ns ns ns nC ns nC
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/μs IF=10A, dI/dt=500A/μs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/μs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. G: L=100uH, VDD=0V, RG=0 , rated VDS=30V and VGS=10V Rev 9: May. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.

AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 10V 50 40 ID (A) 4.5V 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 40 35 RDS(ON) (m?) ? 30 25 20 VGS=10V 15 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance ID(A) 9 6V 12 VDS=5V 15
6 VGS=3.5V 3
125°C
25°C
0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 VGS=10V 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V
VGS=4.5V
60 ID=10A 50 RDS(ON) (m?) ? 40 IS (A)
1.0E+01 1.0E+00 1.0E-01 125°C
1.0E-02 125°C 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.

AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 2 8 VDS=15V ID=10A Capacitance (pF) 600 500 Ciss 400 300 200 Coss 100 0 0 Crss 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 30
100.0 IA, Peak Avalanche Current (A)
In descending order TA=25°C, 100°C, 125°C,
100.0 10μs
10.0
10.0
ID (Amps)
100μs RDS(ON) limited
1.0
1.0 1 10 100 1000
0.1 0.1
TJ(Max)=150°C TA=25°C
1
DC
10 VDS (Volts)
1ms 10ms 100ms 1s 10s
100
Time in Avalache, tA (ms) Figure 9: Single Pulse Avalanche Capability
Figure 10: Maximum Forward Biased Safe Operating Area (Note E)
50 TJ(Max)=150°C TA=25°C
40
Power (W)
30
20
10
0 0.0001 0.01 1 100 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)
Alpha & Omega Semiconductor, Ltd.

AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Single Pulse Ton T
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

AO4466
Gate Charge Test Circuit & Waveform
Vgs Qg 10V
+
VD C
DUT Vgs Ig
+
VDC
Vds
Qgs
Q gd
-
Charge
Res istive Switching Test Circuit & Waveforms
R L Vds Vds
Vgs Rg
DU T
+
VD C
90% Vdd 10% Vgs
t d(o n) tr t on t d(o ff) t off tf
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI =
2 AR
BVDSS
+
VDC
Vdd Id
I AR
-
Diode Recovery Tes t Circuit & Waveforms
Vds + DUT Vgs Vds Q rr = - Idt
Isd Vgs
L
Isd
IF
dI/dt IRM
trr
+
VD C
Vdd Vds
Ig
-
Vdd
Alpha & Omega Semiconductor, Ltd.