IRF7555中文资料

HEXFET ? Power MOSFET

2/2/00

IRF7555

Absolute Maximum Ratings

https://www.wendangku.net/doc/af10008226.html, 1

Thermal Resistance

Parameter Max. Units

R θJA

Maximum Junction-to-Ambient

100 °C/W

Parameter

Max.

Units

V DS Drain-Source Voltage -20V I D @ T A = 25°C Continuous Drain Current, V GS @ -4.5V -4.3I D @ T A = 70°C Continuous Drain Current, V GS @ -4.5V -3.4A I DM Pulsed Drain Current -34P D @T A = 25°C Maximum Power Dissipation 1.25W P D @T A = 70°C Maximum Power Dissipation 0.8W Linear Derating Factor 10 mW/°C V GS Gate-to-Source Voltage ± 12 V E AS Single Pulse Avalanche Energy 36 mJ dv/dt Peak Diode Recovery dv/dt 1.1V/ns T J , T STG Junction and Storage Temperature Range -55 to + 150°C Soldering Temperature, for 10 seconds 240 (1.6mm from case)

New trench HEXFET ? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8? package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium.The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

q

Trench Technology

q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm)q Available in Tape & Reel

Description

PD -91865B

IRF7555

IRF7555

IRF7555

IRF7555

IRF7555

IRF7555