300 MHz to 1000 MHz
Quadrature Modulator
ADL5370 Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, M A 02062-9106, U.S.A. Tel: 781.329.4700 https://www.wendangku.net/doc/a311455073.html, Fax: 781.461.3113 ?2006 Analog Devices, Inc. All rights reserved.
FEATURES
Output frequency range: 300 MHz to 1000 MHz Modulation bandwidth: >500 MHz (3 dB)
1 dB output compression: 11 dBm @ 450 MHz Noise floor: ?160 dBm/Hz
Sideband suppression: ?41 dBc @ 450 MHz Carrier feedthrough: ?50 dBm @ 450 MHz Single supply: 4.75 V to 5.25 V
24-lead LFCSP_VQ package
APPLICATIONS
Cellular communication systems at 450 MHz CDMA2000/GSM
WiMAX/broadband wireless access systems Cable communication equipment
Satellite modems FUNCTIONAL BLOCK DIAGRAM IBBP
IBBN
VOUT
QBBN
QBBP
6
1
1
7
-
1
Figure 1.
GENERAL DESCRIPTION
The ADL5370 is the first in the fixed-gain quadrature modulator (F-MOD) family designed for use from 300 MHz to 1000 MHz. Its excellent phase accuracy and amplitude balance enable high performance intermediate frequency or direct radio frequency modulation for communication systems.
The ADL5370 provides a greater than 500 MHz, 3 dB baseband bandwidth, making it ideally suited for use in broadband zero IF or low IF-to-RF applications and in broadband digital predistortion transmitters. The ADL5370 accepts two differential baseband inputs and
a single-ended LO and generates a single-ended 50 Ω output. The ADL5370 is fabricated using the Analog Devices, Inc. advanced silicon-germanium bipolar process. It is available in a 24-lead, exposed-paddle, Pb-free, LFCSP_VQ package. Perform-ance is specified over a ?40°C to +85°C temperature range.
A Pb-free evaluation board is available.
TABLE OF CONTENTS
Features (1)
Applications (1)
Functional Block Diagram (1)
General Description (1)
Revision History (2)
Specifications (3)
Absolute Maximum Ratings (4)
ESD Caution (4)
Pin Configuration and Function Descriptions (5)
Theory of Operation (10)
Circuit Description (10)
Basic Connections (11)
Optimization...............................................................................12Applications Information.. (13)
DAC Modulator Interfacing (13)
Limiting the AC Swing (13)
Filtering (13)
Using the AD9779 Auxiliary DAC for Carrier Feedthrough Nulling (14)
GSM Operation (14)
LO Generation Using PLLs (15)
Evaluation Board (16)
Characterization Setup (17)
Outline Dimensions (19)
Ordering Guide (19)
REVISION HISTORY
10/06—Revision 0: Initial Version
Rev. 0 | Page 2 of 20
SPECIFICATIONS
V S = 5 V; T A = 25°C; LO = 0 dBm1 single-ended; baseband I/Q amplitude = 1.4 V p-p differential sine waves in quadrature with a 500 mV dc bias; baseband I/Q frequency (f BB) = 1 MHz, unless otherwise noted.
Table 1.
Parameter Conditions
M in
Typ
M ax
Unit
ADL5370 LO = 450 MHz
Operating Frequency Range Range over which uncompensated sideband suppression < ?30 dBc
L ow
frequency 300
MHz
High
frequency 1000
MHz Output Power V IQ = 1.4 V p-p differential 6.2 dBm
Output P1 dB 11 dBm
Carrier Feedthrough ?50 dBm
Sideband Suppression ?41 dBc
Quadrature Error 0.76 Degrees
I/Q Amplitude Balance 0.03 dB
Second Harmonic P OUT ? (f LO + (2 × f BB)), P OUT = 6.2 dBm ?65 dBc
Third Harmonic P OUT ? (f LO + (3 × f BB)), P OUT = 6.2 dBm ?54 dBc
Output IP2 f1BB = 3.5 MHz, f2BB = 4.5 MHz, P OUT = ?2 dBm per tone 60 dBm
Output IP3 f1BB = 3.5 MHz, f2BB = 4.5 MHz, P OUT = ?2 dBm per tone 24 dBm
Noise Floor I/Q inputs = 0 V differential with a 500 mV common-mode bias,
20 MHz carrier offset ?160
dBm/Hz
GSM 6 MHz carrier offset, P OUT = 6 dBm, P LO = 6 dBm ?157 dBc/Hz
LO INPUTS
LO Drive Level1Characterization performed at typical level ?7 0 +7 dBm
Input Return Loss See Figure 9 for a plot of return loss vs. frequency 6 dB BASEBAND INPUTS Pin IBBP, Pin IBBN, Pin QBBP, Pin QBBN
I and Q Input Bias Level 500 mV
Input Bias Current Current sourcing from each baseband input with a bias of 500 mV dc2 45 μA
Input Offset Current 0.1 μA
Differential Input Impedance 2900 kΩ
Bandwidth (0.1 dB) LO = 450 MHz, baseband input = 700 mV p-p sine wave on 500 mV dc 70 MHz
Bandwidth (1 dB) LO = 450 MHz, baseband input = 700 mV p-p sine wave on 500 mV dc 350 MHz
POWER SUPPLIES Pin VPS1 and Pin VPS2
Voltage 4.75
5.25
V Supply Current 205 mA
1 High LO drive reduces noise at a 6 MHz carrier offset in GSM applications.
2 See V-to-I converter discussion in the Circuit Description section for architecture information.
Rev. 0 | Page 3 of 20
Rev. 0 | Page 4 of 20
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating Supply Voltage VPOS 5.5 V IBBP , IBBN, QBBP , QBBN 0 V to 2 V LOIP and LOIN 13 dBm Internal Power Dissipation 1375 mW θJA (Exposed Paddle Soldered Down) 54°C/W Maximum Junction Temperature 159°C
Operating Temperature Range ?40°C to +85°C Storage Temperature Range
?65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
Rev. 0 | Page 5 of 20
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
COM1VPS1COM1VPS1VPS1VPS1
VPS5VPS3VPS4VPS2VPS2VOUT
132456
181617151413C O M 2L O I N L O I P C O M 2C O M 3C O M 3Q B B P C O M 4Q B B N C O M 4I B B N I B B P
798101112
242223212019
06117-002
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No.
Mnemonic Description
1, 2, 7, 10 to 12, 21, 22
COM1, COM2, COM3, COM4 Input Common Pins. Connect to ground plane via a low impedance path.
3 to 6, 1
4 to 18
VPS1, VPS2, VPS3, VPS4, VPS5 Positive Supply Voltage Pins. All pins should be connected to the same supply (V S ). To ensure adequate external bypassing, connect 0.1 μF capacitors between each pin and ground. Adjacent power supply pins of the same name can share one capacitor (see Figure 25).
19, 20, 23, 24
IBBP , IBBN, QBBN, QBBP
Differential In-Phase and Quadrature Baseband Inputs. These high impedance inputs must be dc-biased to 500 mV dc, and must be driven from a low impedance source. Nominal characterized ac signal swing is 700 mV p-p on each pin. This results in a differential drive of 1.4 V p-p with a 500 mV dc bias. These inputs are not self-biased and must be externally biased.
8, 9 LOIP , LOIN 50 Ω Single-Ended Local Oscillator Input. Internally dc-biased. Pins must be ac-coupled. AC-couple LOIN to ground and drive LO through LOIP .
13 VOUT
Device Output. Single-ended, 50 Ω internally biased RF output. Pin must be ac-coupled to the load.
Exposed Paddle
Connect to ground plane via a low impedance path.
Rev. 0 | Page 6 of 20
TYPICAL PERFORMANCE CHARACTERISTICS
V S = 5 V; T A = 25°C; LO = 0 dBm single-ended; baseband I/Q amplitude = 1.4 V p-p differential sine waves in quadrature with a 500 mV dc bias; baseband I/Q frequency (f BB ) = 1 MHz, unless otherwise noted.
801
2
34567
250
450650850105012501450S S B O U T P U T P O W E R (d B m )
06117-003
LO FREQUENCY (MHz)
Figure 3. Single Sideband (SSB) Output Power (P OUT ) vs. LO Frequency (f LO )
and Temperature
801
2
34
567
06117-004
S S B O U T P U T P O W E R (d B m )
LO FREQUENCY (MHz)
Figure 4. Single Sideband (SSB) Output Power (P OUT ) vs. LO Frequency (f LO )
and Supply
5
–5
1101001000
06117-035
O U T P U T P O W E R V A R I A N C E (d B )
BASEBAND FREQUENCY (MHz)
Figure 5. I and Q Input Bandwidth Normalized to Gain @ 1 MHz
(f LO = 500 MHz)
250
450650850105012501450
141012
6820406117-006
O U T P U T P 1d B (d B m )
LO FREQUENCY (MHz)
Figure 6. SSB Output 1 dB Compression Point (OP1dB) vs. f LO and Temperature
141012
6820406117-007
O U T P U T P 1d B (d B m )
LO FREQUENCY (MHz)
Figure 7. SSB Output 1 dB Compression Point (OP1dB) vs. f LO and Supply
Figure 8. Smith Chart of LOIP S11 and VOUT S22 .
(f LO from 250 MHz to 1450 MHz)
Rev. 0 | Page 7 of 20
250
450650850105012501450
–5
–10
–15
–20
–2506117-009
R E T U R N L O S S (d B )
LO FREQUENCY (MHz)
Figure 9. Return Loss (S11) of LOIP
250
450650850105012501450
0–10–20–90–30–40–50–60–70
–8006117-010
C A R R I E R F E E
D T H R O U G H (d B m )
LO FREQUENCY (MHz)
Figure 10. Carrier Feedthrough vs. f LO and Temperature
Multiple Devices Shown
250
450650850105012501450
–10–20–90–30–40–50–60–70
–8006117-011
C A R R I E R F E E
D T H R O U G H (d B m )
LO FREQUENCY (MHz)
Figure 11. Carrier Feedthrough vs. f LO and Temperature after Nulling at 25°C
Multiple Devices Shown
0–10–20–90–30
–40–50–60–70
–8006117-012
S I D E B A N D S U P P R E S S I O N (d B c )
LO FREQUENCY (MHz)
Figure 12. Sideband Suppression vs. f LO and Temperature
Multiple Devices Shown
250
450
650
850
1050
1250
1450
0–10–20–90–30–40–50–60–70
–8006117-013
S I D E B A N D S U P P R E S S I O N (d B c )
LO FREQUENCY (MHz)
Figure 13. Sideband Suppression vs. f LO and Temperature after Nulling at 25°C
Multiple Devices Shown
0.2
0.6 1.0 1.4 1.8 2.2 2.6 3.0
3.4
–20
–80–30
–40
–50
–60–70
06117-014
S S B O U T P U T P O W E R (d B m )
S E C O N D O R D E R D I S T O R T I O N , T H I R D O R D E R D I S T O R T I O N , C A R R I E R F E E D T H R O U G H ,S I D E B A N D S U P P R E S S I O N
BASEBAND INPUT VOLTAGE (V p-p)
Figure 14. Second- and Third-Order Distortion, Carrier Feedthrough, Sideband Suppression, and SSB P OUT vs. Baseband Differential Input Level
(f LO = 450 MHz)
Rev. 0 | Page 8 of 20
–20
–80–30
–40
–50
–60–7006117-015
S S B O U T P U T P O W E R (d B m )
BASEBAND INPUT VOLTAGE (V p-p)
S E C O N D O R D E R D I S T O R T I O N , T H I R D O R D E R D I S T O R T I O N , C A R R I E R F E E D T H R O U G H ,S I D E B A N D S U P P R E S S I O N
Figure 15. Second- and Third-Order Distortion, Carrier Feedthrough, Sideband Suppression, and SSB P OUT vs. Baseband Differential Input Level
(f LO = 900 MHz)
–20
–80–30
–40
–50
–60
–70
S E C O N D A N D T H I R D O R D E R D I S T O R T I O N (d B c )
LO FREQUENCY (Hz)
Figure 16. Second- and Third-Order Distortion vs. f LO and Temperature
(Baseband I/Q Amplitude = 1.4 V p-p differential)
06117-034
–20
–70
–60–50–40–30–80–90
S S B O U T P U T P O W E R (d B m )
BASEBAND FREQUENCY (Hz)
S E C O N D O R D E R D I S T O R T I O N , T H I R D O R D E R D I S T O R T I O N , C A R
R I E R F E E D T H R O U G H ,S I D E B A N D S U P P R E S S I O N
Figure 17. Second- and Third-Order Distortion, Carrier Feedthrough, Sideband Suppression, and SSB P OUT vs. f BB and Temperature (f LO = 450 MHz) 250
450650850
105012501450
30
25
15
20
5
010
06117-023
O U T P U T T H I R D O R D E R I N T E R C E P T (d B m )
LO FREQUENCY (MHz)
Figure 18. OIP3 vs. Frequency and Temperature
70
603040502001006117-024
O U T P U T S E C O N D O R D E R I N T E R C E P T (d B m )
LO FREQUENCY (MHz)
Figure 19. OIP2 vs. Frequency and Temperature
–20
–70–60–50–40–30–80
–90
06117-018
S S B O U T P U T P O W E R (d B m )
LO AMPLITUDE (dBm)
S E C O N D O R D E R D I S T O R T I O N , T H I R D O R D E R D I S T O R T I O N , C A R R I E R F E E D T H R O U G H ,S I D E B A N D S U P P R E S S I O N
Figure 20. Second- and Third-Order Distortion, Carrier Feedthrough, Sideband Suppression, and SSB P OUT vs. LO Amplitude (f LO = 450 MHz)
Rev. 0 | Page 9 of 20
–20
–70–60–50–40–30
–80–90
06117-019
S S B O U T P U T P O W E R (d B m )
LO AMPLITUDE (dBm)
S E C O N D O R D E R D I S T O R T I O N , T H I R D O R D E R D I S T O R T I O N , C A R R I E R F E E D T H R O U G H ,S I D E B A N D S U P P R E S S I O N
Figure 21. Second- and Third-Order Distortion, Carrier Feedthrough, Sideband Suppression, and SSB P OUT vs. LO Amplitude (f LO = 900 MHz)
0.230.22
0.210.200.190.17
0.180.160.15
06117-020
S U P P L Y C U R R E N T (A )
TEMPERATURE (°C)
–40
25
85
V S = 5.25V
V S = 5V V S = 4.75V
Figure 22. Power Supply Current vs. Temperature
06117-036
16
4681012
1420
NOISE (dBm/Hz) AT 20MHz OFFSET
Q U A N T I T Y
–161.4
–161.
2
–161.0
–160.8
–160.6
–160.4
–160.2
–160.0
–159.8
–159.6
–159.4
–159.2
–159.0
–158.8
–158.6
Figure 23. 20 MHz Offset Noise Floor Distribution at f LO = 450 MHz
(I/Q Amplitude = 0 mV p-p with 500 mV dc bias)
Rev. 0 | Page 10 of 20
THEORY OF OPERATION
CIRCUIT DESCRIPTION
Overview
The ADL5370 can be divided into five circuit blocks: the local oscillator (LO) interface, the baseband voltage-to-current(V-to-I) converter, the mixers, the differential-to-single-ended (D-to-S) amplifier, and the bias circuit. A detailed block diagram of the device is shown in Figure 24.
06117-032
Figure 24. Block Diagram
The LO interface generates two LO signals in quadrature. These signals are used to drive the mixers. The I and Q baseband input signals are converted to currents by the V-to-I stages, which then drive the two mixers. The outputs of these mixers combine to feed the differential-to-single-ended amplifier, which provides a 50 Ω output interface. The bias cell generates
reference currents for the V-to-I stage and the D-to-S amplifier.
LO Interface
The LO interface consists of a polyphase quadrature splitter followed by a limiting amplifier. The LO input impedance is set by the polyphase. The LO can be driven either single-ended or differentially. When driven single-ended, the LOIN pin should be ac-grounded via a capacitor. Each quadrature LO signal then passes through a limiting amplifier that provides the mixer with a limited drive signal.
V-to-I Converter
The differential baseband inputs (QBBP , QBBN, IBBN, IBBP) consist of the bases of PNP transistors, which present a high impedance. The voltages applied to these pins drive the V-to-I stage that converts baseband voltages into currents. The differential output currents of the V-to-I stages feed each of their respective Gilbert-cell mixers. The dc common-mode voltage at the baseband inputs sets the currents in the two mixer cores. Varying the
baseband common-mode voltage varies the current in the mixer and affects overall modulator performance. The recommended dc voltage for the baseband common-mode voltage is 500 mV dc.
Mixers
The ADL5370 has two double-balanced mixers: one for the in-phase channel (I channel) and one for the quadrature channel (Q channel). Both mixers are based on the Gilbert-cell design of four cross-connected transistors. The output currents from the two mixers sum together into a load. The signal developed across this load is used to drive the D-to-S amplifier.
D-to-S Amplifier
The output D-to-S amplifier consists of a totem pole output stage. The 50 Ω output impedance is established by an on-chip resistor. The D-to-S output is internally dc-biased and should be ac-coupled at its output (VOUT).
Bias Circuit
An on-chip band gap reference circuit is used to generate a proportional-to-absolute temperature (PTAT) reference current for the V-to-I stage and a temperature independent current for the D-to-S output stage.
BASIC CONNECTIONS
Figure 25 shows the basic connections for the ADL5370.
Figure 25. Basic Connections for the ADL5370
Power Supply and Grounding
All the VPS pins must be connected to the same 5 V source. Adjacent pins of the same name can be tied together and decoupled with a 0.1 μF capacitor. These capacitors should be located as close as possible to the device. The power supply can range between 4.75 V and 5.25 V.
The COM1 pin, COM2 pin, COM3 pin, and COM4 pin should be tied to the same ground plane through low impedance paths. The exposed paddle on the underside of the package should also be soldered to a low thermal and electrical impedance ground plane. If the ground plane spans multiple layers on the circuit board, they should be stitched together with nine vias under the exposed paddle. The Analog Devices AN-772 application note discusses the thermal and electrical grounding of the
LFCSP_VQ in greater detail. Baseband Inputs
The baseband inputs QBBP, QBBN, IBBP, and IBBN must be driven from a differential source. The nominal drive level of 1.4 V p-p differential (700 mV p-p on each pin) should be biased to a common-mode level of 500 mV dc.
The dc common-mode bias level for the baseband inputs may range from 400 mV to 600 mV. This results in a reduction in the usable input ac swing range. The nominal dc bias of 500 mV allows for the largest ac swing, limited on the bottom end by the ADL5370 input range and on the top end by the output compliance range on most digital-to-analog converters (DAC) from Analog Devices.
LO Input
A single-ended LO signal should be applied to the LOIP pin through an ac-coupling capacitor. The recommended LO drive power is 0 dBm. The LO return pin, LOIN, should be ac-coupled to ground through a low impedance path.
The nominal LO drive of 0 dBm can be increased to up to 7 dBm to realize an improvement in the noise performance of the modulator. This improvement is tempered by degradation in the sideband suppression performance (see Figure 20) and, therefore, should be used judiciously. If the LO source cannot provide the 0 dBm level, then operation at a reduced power below 0 dBm is acceptable. Reduced LO drive results in slightly increased modulator noise. The effect of LO power on sideband suppression and carrier feedthrough is shown in Figure 20. The effect of LO power on GSM noise is shown in Figure 35.
RF Output
The RF output is available at the VOUT pin (Pin 13). This pin must also be ac-coupled. The VOUT pin has a nominal broadband impedance of 50 Ω and does not need further external matching.
Rev. 0 | Page 11 of 20
Rev. 0 | Page 12 of 20
OPTIMIZATION
The carrier feedthrough and sideband suppression performance of the ADL5370 can be improved through the use of optimiza-tion techniques.
Carrier Feedthrough Nulling
Carrier feedthrough results from minute dc offsets that occur between each of the differential baseband inputs. In an ideal modulator the quantities (V IOPP ? V IOPN ) and (V QOPP ? V QOPN ) are equal to zero, and this results in no carrier feedthrough. In a real modulator, those two quantities are nonzero; and, when mixed with the LO, they result in a finite amount of carrier feedthrough. The ADL5370 is designed to provide a minimal amount of carrier feedthrough. Should even lower carrier feedthrough levels be required, minor adjustments can be made to the (V IOPP ? V IOPN ) and (V QOPP ? V QOPN ) offsets. The I-channel offset is held constant while the Q-channel offset is varied, until a minimum carrier feedthrough level is obtained. The Q-channel offset required to achieve this minimum is held constant while the offset on the I-channel is adjusted, until a new minimum is reached. Through two iterations of this process, the carrier feedthrough can be reduced to as low as the output noise. The ability to null is sometimes limited by the resolution of the offset adjustment. Figure 26 shows the relationship of carrier feedthrough vs. dc offset as null.
–60–88
–84
–80–76–72–68–64–300–240–180–120
–60060120180240300
06117-027
C A R R I E R F E E
D T H R O U G H (d B m )
V P –V N OFFSET (μV)
Figure 26. Carrier Feedthrough vs. DC Offset Voltage at 450 MHz
Note that throughout the nulling process, the dc bias for the baseband inputs remains at 500 mV . When no offset is applied
V IOPP = V IOPN = 500 mV , or V IOPP ? V IOPN = V IOS = 0 V
When an offset of +V IOS is applied to the I-channel inputs
V IOPP = 500 mV + V IOS /2, and
V IOPN = 500 mV ? V IOS /2, such that V IOPP ? V IOPN = V IOS
The same applies to the Q channel.
It is often desirable to perform a one-time carrier null calibra-tion. This is usually performed at a single frequency. Figure 27 shows how carrier feedthrough varies with LO frequency over a range of ±50 MHz on either side of a null at 450 MHz.
–25–30–35–40–45–50–55–60–65–70–75–80–85400
410
420
430
440
450
460
470
480
490
500
06117-028
C A R R I E R F E E
D T H R O U G H (d B m )
LO FREQUENCY (MHz)
Figure 27. Carrier Feedthrough vs. Frequency After Nulling at 450 MHz
Sideband Suppression Optimization
Sideband suppression results from relative gain and relative phase offsets between the I and Q channels and can be suppressed through adjustments to those two parameters.
Figure 28 illustrates how sideband suppression is affected by the gain and phase imbalances.
0–10–20–30–40–50–60–70
–80–900.01
0.11
10100
06117-026
S I D E B A N D S U P P R E S S I O N (d B c )
PHASE ERROR (Degrees)
Figure 28. Sideband Suppression vs. Quadrature Phase Error for Various
Quadrature Amplitude Offsets
Figure 28 underlines the fact that adjusting only one parameter improves the sideband suppression only to a point, unless the other parameter is also adjusted. For example, if the amplitude offset is 0.25 dB, improving the phase imbalance better than 1° does not yield any improvement in the sideband suppression. For optimum sideband suppression, an iterative adjustment between phase and amplitude is required.
The sideband suppression nulling can be performed either through adjusting the gain for each channel or through the modification of the phase and gain of the digital data coming from the digital signal processor.
Rev. 0 | Page 13 of 20
APPLICATIONS INFORMATION
DAC MODULATOR INTERFACING
The ADL5370 is designed to interface with minimal components to members of the Analog Devices family of DACs. These DACs feature an output current swing from 0 to 20 mA, and the interface described in this section can be used with any DAC that has a similar output.
Driving the ADL5370 with an Analog Devices TxDAC?
An example of the interface using the AD9779 TxDAC is shown in Figure 31. The baseband inputs of the ADL5370 require a dc bias of 500 mV . The average output current on each of the outputs of the AD9779 is 10 mA. Therefore, a single 50 Ω resistor to ground from each of the DAC outputs results in an average current of 10 mA flowing through each of the resistors, thus producing the desired 500 mV dc bias for the inputs to the ADL5370.
06117-029
Figure 29. Interface Between the AD9779 and ADL5370 with 50 Ω Resistors to Ground to Establish the 500 mV DC Bias for the ADL5370 Baseband Inputs
The AD9779 output currents have a swing that ranges from 0 mA to 20 mA. With the 50 Ω resistors in place, the ac voltage swing going into the ADL5370 baseband inputs ranges from 0 V to 1 V . A full-scale sine wave out of the AD9779 can be described as a 1 V p-p single-ended (or 2 V p-p differential) sine wave with a 500 mV dc bias.
LIMITING THE AC SWING
There are situations in which it is desirable to reduce the ac voltage swing for a given DAC output current. This can be achieved through the addition of another resistor to the interface. This resistor is placed in shunt between each side of the differential pair, as shown in Figure 30. It has the effect of reducing the ac swing without changing the dc bias already established by the 50 Ω resistors.
06117-030
Figure 30. AC Voltage Swing Reduction Through the Introduction
of a Shunt Resistor Between Differential Pair
The value of this ac voltage swing limiting resistor is chosen based on the desired ac voltage swing. Figure 31 shows the relationship between the swing-limiting resistor and the peak-to-peak ac swing that it produces when 50 Ω bias-setting resistors are used.
2.01.8
1.61.41.21.00.80.60.40.2010
100
1000
10000
06117-025
D I F F
E R E N T I A L S W I N G (V p -p )
R L (?)
Figure 31. Relationship Between the AC Swing-Limiting Resistor and the
Peak-to-Peak Voltage Swing with 50 Ω Bias-Setting Resistors
FILTERING
It is necessary to low-pass filter the DAC outputs to remove images when driving a modulator. The interface for setting up the biasing and ac swing that was discussed in the Limiting the AC Swing section lends itself well to the introduction of such a filter. The filter can be inserted between the dc bias setting
resistors and the ac swing-limiting resistor. Doing so establishes the input and output impedances for the filter.
An example is shown in Figure 32 with a third-order elliptical filter with a 3 dB frequency of 3 MHz. Matching input and output impedances makes the filter design easier, so the shunt resistor chosen is 100 Ω, producing an ac swing of 1 V p-p differential.
Rev. 0 | Page 14 of 20
06117-031
Figure 32. DAC Modulator Interface with 3 MHz Third-Order Low-Pass Filter
USING THE AD9779 AUXILIARY DAC FOR CARRIER FEEDTHROUGH NULLING
The AD9779 features an auxiliary DAC that can be used to inject small currents into the differential outputs for each main DAC channel. This feature can be used to produce the small offset voltages necessary to null out the carrier feedthrough from the modulator. Figure 33 shows the interface required to utilize the auxiliary DACs. This adds four resistors to the interface.
06117-041
Figure 33. DAC Modulator Interface with Auxiliary DAC Resistors
GSM OPERATION
Figure 34 shows the GSM EVM and spectral mask performance vs. output power for the ADL5370 at 450 MHz. For a given LO amplitude, the performance is independent of output power.
–35
–56–49–42–63–70–77–84–91
2.0
1.5
1.0
0.5
01234567
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250k H z , 400k H z , 600k H z , A N D 1200k H z S P E C T R A L M A S K (d B c /30K H z )
R M S A N D P E A K E V M (%)
OUTPUT POWER (dBm)
Figure 34. GSM EVM and Spectral Performance vs. Channel Power at
450 MHz vs. Output Power; LO Power = 0 dBm
Figure 35 shows the GSM EVM, spectral mask performance and 6 MHz offset noise vs. LO amplitude at 450 MHz with an output power of 6 dBm. Increasing the LO drive level improves the noise performance but degrades EVM performance.
–35
–56–49–42–63–70–77–84–112
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–98
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2.72.52.32.11.91.71.5
1.31.1
0.9
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6M H z N O I S E (d B c /100k H z )250k H z ,400k H z ,600k H z A N D 1200k H z S P E C T R A L M A S K (d B c /30k H z )
R M S A N D P E A K E V M (%)
LO AMPLITUDE (dBm)
Figure 35. GSM EVM, Spectral Performance, and 6 MHz Noise Floor vs.
LO Power at 450 MHz; Output Power = 6 dBm
Figure 35 illustrates that an LO amplitude of 0 dBm provides the ideal operating point for noise and EVM for a GSM signal at 450 MHz.
LO GENERATION USING PLLS
Analog Devices has a line of PLLs that can be used for generating the LO signal. Table 4 lists the PLLs together with their maximum frequency and phase noise performance. Table 4. ADI PLL Selection Table
Part Frequency
F IN(MHz)Phase Noise @ 1 kHz Offset and 200 kHz PFD (dBc/Hz)
ADF4110 550 ?91 @ 540 MHz
ADF4111 1200 ?87@ 900 MHz
ADF4112 3000 ?90 @ 900 MHz
ADF4113 4000 ?91 @ 900 MHz
ADF4116 550 ?89 @ 540 MHz
ADF4117 1200 ?87 @ 900 MHz
ADF4118 3000 ?90 @ 900 MHz
The ADF4360 comes as a family of chips, with nine operating frequency ranges. One is chosen, depending on the local oscillator frequency required. While the use of the integrated synthesizer may come at the expense of slightly degraded noise performance from the ADL5370, it can be a cheaper alternative to a separate PLL and VCO solution. Table 5 shows the options available.
Table 5. ADF4360 Family Operating Frequencies
Part Output Frequency Range (MHz)
ADF4360-0 2400 to 2725
ADF4360-1 2050 to 2450
ADF4360-2 1850 to 2150
ADF4360-3 1600 to 1950
ADF4360-4 1450 to 1750
ADF4360-5 1200 to 1400
ADF4360-6 1050 to 1250
ADF4360-7 350 to 1800
ADF4360-8 65 to 400 TRANSMIT DAC OPTIONS
The AD9779 recommended in the previous sections of this data sheet is by no means the only DAC that can be used to drive the ADL5370. There are other appropriate DACs, depending on the level of performance required. Table 6 lists the dual Tx-DACs offered by Analog Devices.
Table 6. Analog Devices Dual Tx—DAC Selection Table
Part Resolution (Bits) Update Rate (MSPS Min) AD9709 8 125
AD9761 10 40
AD9763 10 125
AD9765 12 125
AD9767 14 125
AD9773 12 160
AD9775 14 160
AD9777 16 160
AD9776 12 1000
AD9778 14 1000
AD9779 16 1000
All DACs listed have nominal bias levels of 0.5 V and use the same simple DAC-modulator interface that is shown in Figure 31. MODULATOR/DEMODULATOR OPTIONS
Table 7 lists other Analog Devices modulators and demodulators. Table 7. Modulator/Demodulator Options
Part
M
od/Demod
Frequency
Range (MHz) Comments
AD8345 Mod 140 to 1000
AD8346 Mod 800 to 2500
AD8349 Mod 700 to 2700
ADL5390 Mod 20 to 2400 External quadrature ADL5385 Mod 50 to 2200
ADL5371 Mod 700 to 1300
ADL5372 Mod 1600 to 2400
ADL5373 Mod 2300 to 3000
ADL5374 Mod 3000 to 4000
AD8347 Demod 800 to 2700
AD8348 Demod 50 to 1000
AD8340 Vector mod 700 to 1000
AD8341 Vector mod 1500 to 2400
Rev. 0 | Page 15 of 20
EVALUATION BOARD
Populated RoHS-compliant evaluation boards are available for evaluation of the ADL5370. The ADL5370 package has an exposed paddle on the underside. This exposed paddle must be soldered to the board (see the Power Supply and Grounding discussion in the Basic Connections section). The evaluation board is designed without any components on the underside so heat can be applied to the underside for easy removal and replacement of the ADL5370.
Figure 36. ADL5370 Evaluation Board Schematic
Figure 37. Evaluation Board Layout, Top Layer.
Table 8. Evaluation Board Configuration Options
Component Description Default
Condition VPOS, GND Power Supply and Ground Clip Leads. Not applicable
RFPI, RFNI, RFPQ, RFNQ, CFPI, CFNI, CFPQ, CFNQ, RTQ, RTI Baseband Input Filters. These components can be used
to implement a low-pass filter for the baseband signals.
See the Filtering discussion in the Applications
Information section.
RFNQ, RFPQ, RFNI, RFPI = 0 Ω (0402)
CFNQ, CFPQ, CFNI, CFPI = Open (0402)
RTQ, RTI = Open (0402)
Rev. 0 | Page 16 of 20
Rev. 0 | Page 17 of 20
CHARACTERIZATION SETUP
RF OUT
FREQ 4MHz LEVEL 0dBm
BIAS 0.5V BIAS 0.5V GAIN 0.7V GAIN 0.7V
06117-037
Figure 38. Characterization Bench Setup
The primary setup used to characterize the ADL5370 is shown in Figure 38. This setup was used to evaluate the product as a single-sideband modulator. The Aeroflex signal generator supplied the local oscillator (LO) and differential I and Q baseband
signals to the device under test, DUT. The typical LO drive was 0 dBm. The I channel is driven by a sine wave, and the Q channel is driven by a cosine wave. The lower sideband is the single sideband (SSB) output.
The majority of characterization for the ADL5370 was performed using a 1 MHz sine wave signal with a 500 mV common-mode voltage applied to the baseband signals of the DUT . The baseband signal path was calibrated to ensure that the V IOS 1 and V QOS offsets on the baseband inputs were minimized, as close as possible, to 0 V before connecting to the DUT.
1
See the Carrier Feedthrough Nulling section for the definitions of V IOS
and V QOS .
Rev. 0 | Page 18 of 20
RF OUT
FREQ 4MHz TO 4GHz
LEVEL 0dBm
Figure 39. Setup for Baseband Frequency Sweep and Undesired Sideband Nulling
The setup used to evaluate baseband frequency sweep and
undesired sideband nulling of the ADL5370 is shown in Figure 39. The interface board has circuitry that converts the single-ended I and Q inputs from the arbitrary function generator to differ-ential I and Q baseband signals with a dc bias of 500 mV . Undesired sideband nulling was achieved through an iterative process of adjusting amplitude and phase on the Q channel. See Sideband Suppression Optimization in the Optimization section for a more detailed discussion on sideband nulling.
OUTLINE DIMENSIONS
*COMPLIANT TO JEDEC STANDARDS MO-220-VGGD-2
EXCEPT FOR EXPOSED PAD DIMENSION
Figure 40. 24-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4 mm × 4 mm Body, Very Thin Quad
(CP-24-2)
Dimensions shown in millimeters
ORDERING GUIDE
Description Package Option Ordering Quantity
Package
odel Temperature
Range
ADL5370ACPZ-R21–40°C to +85°C 24-Lead LFCSP_VQ, 7” Tape and Reel CP-24-2 250
ADL5370ACPZ-R71–40°C to +85°C 24-Lead LFCSP_VQ, 7” Tape and Reel CP-24-2 1,500
ADL5370ACPZ-WP1–40°C to +85°C 24-Lead LFCSP_VQ, Waffle Pack CP-24-2 64
ADL5370-EVALZ1 Evaluation
Board
1 Z = Pb-free part.
Rev. 0 | Page 19 of 20
NOTES
?2006 Analog Devices, Inc. All rights reserved. Trademarks and Array
registered trademarks are the property of their respective owners.
D06117-0-10/06(0)
Rev. 0 | Page 20 of 20