贴片三极管j6

贴片三极管j6

JIANGSU CHANGJ CHANGJI I ANG EL ELE E C TRONICS TECHNOLOGY CO.,L TD 本资料由东莞长电代理:FUYAT CO.,LTD 提供86-86-769-85388861

769-85388861S 9014

TRANSISTOR (NPN)

FE FEA

A TURES z Complemen Complement t a r y to S90S90115MARKING:J6

MAXIMUM R A TINGS (T A =2=255℃unless othe other

r w i s e noted)SO SOT

T -231.BASE 2.EMITTER 3.COLLECTOR

Symbol Par Para a met mete

e r V alue Uni Unit t s V CBO Collector-Base Voltage 50V V CEO Collector-Emitter Voltage 45V V EBO Emitter-Base Voltage 5V I C Collector Current -Continuous 0.1A P C Collector Power Dissipation 0.2W T j Junction Temperature 150℃T stg

Storage Temperature

-55-150

ELECTRICAL CHAR CHARA A CTERISTICS (T amb=25℃unless othe other

r w ise specified)Parame Paramet

t e r Symbol T est

c o n

d iti ition on ons

s MIN T YP

M A X

UNIT Collector-base breakd breakdo o w n v o l t age V (BR)CBO I C =100μA,

I E =0

50V Collector-emitter bre brea a kd kdo o w n v ol olt t age V (BR)CEO I C =0.1mA,I B =045V Emitter-ba Emitter-bas s e breakd breakdo o w n v o l t age V (BR)EBO I E =100μA,I C =05

V

Collector cut-off current I CBO V CB =50V ,I E =00.1μA Collector cut-off current I CEO V CE =35V ,I B =00.1μA Emitter cut-off current I EBO V EB =3V ,I C =00.1

μA

DC cur curr

r ent gain h FE V CE =5V,

I C =1mA

200

1000Collecto Collector r -emitter satu satur r ation v o l t age V CE (sat)I C =100mA,I B =5mA 0.3V Ba Bas s e -emitt -emitte e r sat satu u rati ratio o n v o l t a g e V BE (sat)

I C =100mA,I B =5mA 1

V T r a n s ition fr fre e qu que

e n c y

f T

V CE =5V,I C =10mA

f=30MHz

150

MHz

CLASSIFIC CLASSIFICA A TION OF h FE Rank L H Range

200-450

450-1000

T y pi pica ca cal l Ch Cha a r ac act t e ri ris s ti tic c s S 901014

4

贴片三极管j6

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