BM192-VCAB-CE 规格书
BM192-VCAB-CE
One-Cell Li Battery Protectors
General Description
The BM192-VCAB-CE is protector for
lithium-ion and lithium polymer rechargeable battery with high accuracy voltage detection. It can be used for protecting single cell lithium-ion or/and lithium polymer battery packs from overcharge, overdischarge, overcurrent and short circuit. The IC has suitable protection delay functions and low power consumption property.
Applications
Typical Application Circuit
P-
P+
Features
l Overcharge Detection Voltage
n 4.425V
n Accuracy ±50mV (Ta=25℃)
±75mV (Ta=-30℃~80℃)
l Overdischarge Detection Voltage
n 2.500V
n Accuracy ±100mV (Ta=25℃)
l Discharge Overcurrent Detection Voltage
n 0.050V (V DD = 3.300V)
n Accuracy ±10mV (Ta=25℃) l Short Protection Detection Voltage
n Typ. 0.800V (V DD = 3.300V)
n Accuracy ±150mV (Ta=25℃) l Low Current Consumption
n Typ. 4.0uA (V DD = 3.900V, Ta=25℃) （Standard working current ）
n Typ. 1.3uA (V DD = 2.000V, Ta=25℃) （With auto wake up ）
l 0V charge function is allowed l Auto Wake up function is allowed l Small Package
n DFNWB2.2*2.9-6L
l FET general characteristics
n VDS=20V
n Rss(on)<40 mΩ (V GS =3.7V,ID=1A) n ESD Rating: 2000V HBM
Notes
R 1 and C 1 are to stabilize the supply voltage of the BM192-VCAB-CE. R 1 C 1 is hence regarded as the time constant for V DD pin. R 1 and R 2 can also be a part of current
limit
circuit
for
the
BM192-VCAB-CE.
Recommended values of these elements are as follows: l R 1＜1KΩ. A larger value of R 1 results in higher
detection voltage, introducing errors.
l 1.5kΩ＜R 2＜4KΩ. A larger value of R 2 possibly
prevents resetting from over-discharge even with a
charger.
l R 1+ R 2＞1.6KΩ. Smaller values may lead to power
consumption over the maximum dissipation rating of the BM192-VCAB-CE.
The requirement or resistors and capacitors and the value of constants should be decided depending upon the system function and characteristics.
https://www.wendangku.net/doc/a517325051.html, 137********
Marking Contents
B M192-X X X X-
C E
Symbol Meaning Description
XXXX The first X stands for Overcharge detection voltage (Vdet1),
The second X stands for Overdischarge detection voltage (Vdet2),
The third X stands for Discharge Overcurrent detection voltage (Vdet3),
The fourth X stands for versions.
Assigned from
AAAA to WWWW
CE Package DFNWB2.2*2.9-6L Block Diagram
Pin Description
Bottom View Top View
Pin Symbol Description P1 S2 The source terminal of MOSFET switch for discharge control P2 V SS Ground P3 V DD Power supply P4 NC No Connection
P5 V M Connected to charger’s negative pin P6 S1 The source terminal of MOSFET switch for charge control
P7 IS The substrate of IC, IS should be floating P8 MS The common drain terminal of MOS, MS should be floating
(Ta=25℃unless otherwise specified) Symbol Item Conditions Min. Typ. Max. Unit DETECTION VOLTAGE AND DELAY TIME
Vdet1 Overcharge Detection Voltage 4.375 4.425 4.475 V Vrel1 Release Voltage For Overcharge Detection 4.175 4.225 4.275 V Vdet2Overdischarge Detection Voltage 2.400 2.500 2.600 V Vrel2 Release Voltage For Overdischarge 2.800 2.900 3.000 V Vrel2’ Release Voltage For Overdischarge 2 Charger connected 2.400 2.500 2.600 V Vdet3 Discharge Overcurrent Detection Voltage V DD = 3.300V 0.040 0.050 0.060 V Vshort Short Protection Voltage V DD = 3.300V 0.650 0.800 0.950 V Vcha Charger Detection (Charge Overcurrent) -0.065 -0.050 -0.035 V V0cha 0V Battery Charge Starting Charger Voltage Applied for 0V battery
1.2 - - V
charge function
Tvdet1 Overcharge Detection Delay Time V DD = 4.0V→4.5V 600 1200 1800 ms Tvrel1 Overcharge Release Delay Time V DD = 4.5V→4.0V 10 25 40 ms Treset Overcharge Reset Delay Time V DD = 4.5V→4.0V→4.5V 8 23 38 ms Tvdet2 Overdischarge Detection Delay Time V DD = 4.0V→2.0V 36 72 108 ms Tvrel2 Overdischarge Release Delay Time V DD = 2.0V→3.0V, V M = 0V 1.1 2.2 3.3 ms Tvdet3 Discharge Overcurrent Detection Delay Time V DD =3.3V, V M = 0V→0.2V 5 10 15 ms Tab Charge Overcurrent Detection Delay Time V DD =3.3V, V M = 0V→-0.2V 5 10 15 ms Tshort Short Detection Delay Time V DD =3.3V, V M = 0V→1.2V 210 420 630 us Tvrel3 Discharge Overcurrent Release Delay Time V DD =3.3V, V M = 0.2V→0 V 1.1 2.2 3.3 ms OUTPUT VOLTAGE AND V M INTERNAL RESISTANCE
R VMD Resistance between V M and V DD V DD=2.0V, V M =0V 100 600 900 kΩ R VMS Resistance between V M and V SS V DD=3.3V, V M =1V 60 100 300 kΩ OPERRATION VOLTAGE AND CURRENT CONSUMPTION
V DD Operating Input Voltage V DD-Vss 1.6 V DD8.0 V V M Operating Input Voltage V DD-V M 1.5 - 28.0 V
I DD Supply Current V DD = 3.9V, V M = 0V - 4.0 6.0 uA I STANDBY Standby Current V DD = 2.0V, V M =0V→2.0V - 1.3 2.5 uA
1* The Electrical parameters for this temperature range is guaranteed by design, not tested in production.
(Ta =-30℃～80℃unless otherwise specified) Symbol Item Conditions Min. Typ. Max. Unit DETECTION VOLTAGE AND DELAY TIME
Vdet1 Overcharge Detection Voltage 4.350 4.425 4.500 V Vrel1 Release Voltage For Overcharge Detection 4.150 4.225 4.300 V Vdet2Overdischarge Detection Voltage 2.400 2.500 2.600 V Vrel2 Release Voltage For Overdischarge 2.800 2.900 3.000 V Vrel2’ Release Voltage For Overdischarge 2 Charger connected 2.400 2.500 2.600 V Vdet3 Discharge Overcurrent Detection Voltage V DD = 3.300V 0.030 0.050 0.070 V Vshort Short Protection Voltage V DD = 3.300V 0.500 0.800 1.100 V Vcha Charger Detection (Charge Overcurrent) -0.080 -0.050 -0.020 V
V0cha 0V Battery Charge Starting Charger Voltage Applied for 0V battery
1.2 - - V
charge function
Tvdet1 Overcharge Detection Delay Time V DD = 4.0V→4.5V 480 1200 1920 ms Tvrel1 Overcharge Release Delay Time V DD = 4.5V→4.0V 8 25 41 ms Treset Overcharge Reset Delay Time V DD = 4.5V→4.0V→4.5V 6 23 39 ms Tvdet2 Overdischarge Detection Delay Time V DD = 4.0V→2.0V 29 72 115 ms Tvrel2 Overdischarge Release Delay Time V DD = 2.0V→3.0V, V M = 0V 0.9 2.2 3.5 ms Tvdet3 Discharge Overcurrent Detection Delay Time V DD =3.3V, V M = 0V→0.2V 4 10 16 ms Tab Charge Overcurrent Detection Delay Time V DD =3.3V, V M = 0V→-0.2V 4 10 16 ms Tshort Short Detection Delay Time V DD =3.3V, V M = 0V→1.2V 168 420 672 us Tvrel3 Discharge Overcurrent Release Delay Time V DD =3.3V, V M = 0.2V→0 V 0.9 2.2 3.5 ms OUTPUT VOLTAGE AND V M INTERNAL RESISTANCE
R VMD Resistance between V M and V DD V DD=2.0V, V M =0V 75 600 1300 kΩ
R VMS Resistance between V M and V SS V DD=3.3V, V M =1V 40 100 400 kΩ OPERRATION VOLTAGE AND CURRENT CONSUMPTION
V DD Operating Input Voltage V DD-Vss 1.6 V DD8.0 V V M Operating Input Voltage V DD-V M 1.5 - 28.0 V
I DD Supply Current V DD = 3.9V, V M = 0V - 4.0 6.5 uA
I STANDBY Standby Current V DD = 2.0V, V M =0V→2.0V - 1.3 3.0 uA
1* The Electrical parameters for this temperature range is guaranteed by design, not tested in production.
Electrical Characteristics 1*(Ta=25oC , GND=0V unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Notes
Drain current at cut off of MOS-FET I DSS 1 uA Vds=20V Source -source on state resistance 1 R SS(on)1 21 33 45 mΩ Vdd=2.6V , I D=1.0A Source -source on state resistance 2 R SS (on)2 20 30 40 mΩ Vdd=3.7V , I D=1.0A Source -source on state resistance 3 R SS (on)3 19 29 39 mΩ Vdd=4.2V , I D=1.0A Body Diode-Forward Voltage V SD0.40 0.74 1.20 V Is=1.0A , V GS=0V
1* The Electrical parameters for this temperature range is guaranteed by design, not tested in production.
Absolute Maximum Ratings (Ta=25oC , V SS=0V) Symbol Item Ratings Unit V DD Supply Voltage-0.3 to 8V
V M V M Pin Input Voltage V DD -28 to V DD+0.3V
V GS Gate-Source Voltage ±12 V
V DS Drain- Source Voltage 20 V
ID Drain Current 8 A
Pd Power Consumption150mW
Ta Operating Temperature Range-30 to 80℃
Tstg Storage Temperature Range-55 to 125℃Caution: These values must not be exceeded under any conditions!
Function Description
Normal Condition:
V DD is between the Overdischarge Detection Voltage (Vdet2) and Overcharge Detection Voltage (Vdet1) and the V M voltage is between Charger Detection Voltage (Vcha) and the Discharge Overcurrent Detection Voltage (Vdet3), therefore the MOS-FET of charge and discharge are all on. Charging and discharging can be carried out freely.
Overcharge Condition:
When V DD increases and passes Vdet1 during charging under the normal condition, the charge control FET turns off after Overcharge Detection Delay Time (Tvdet1). If, within Tvdet1, V DD becomes lower than Vdet1 and stays for duration shorter than Overcharge Reset Delay Time (Treset) before rising up over Vdet1 again, this type of instantaneous falling of V DD is ignored. Otherwise, if the time V DD stays lower than Vdet1 is longer than Treset, the timing related to Tvdet1 shall be reset.
Charge Overcurrent Condition:
If the V M voltage falls below the Charger Detection Voltage (Vcha) during charging under normal condition and it continues for the Charge Overcurrent Delay Time (Tvcha) or longer, the charge control FET turns off and charging stops. This action is called the charge overcurrent detection.
Charge overcurrent detection works when the discharging control FET is on and the V M voltage falls below the Charger Detection Voltage (Vcha). To an overdischarged battery, only when charging makes the battery voltage higher than the Overdischarge Detection Voltage (Vdet2), the charge overcurrent detection can act. Charge overcurrent state is released, once the voltage difference between VM and VSS becomes less than the Charge Overcurrent Detection Voltage (Vcha).
Overcharge Protection Release Condition:
The charging state can be reset and charge control FET will turn on ,as follow condition:
(1) When the V M voltage is between Vdet3 and Vcha, V DD becomes lower than the Overcharge Release
Voltage (Vrel1) , and stays longer than Overcharge Release Delay Time (Tvrel1), the charge control FET turns on.
(2) When a charger is disconnected with the battery pack, and the V DD level is lower than Vdet1, the
charge control FET turns on.
Note: when a charger keep connecting, even if V DD level is lower than Vrel1, the overcharge state will not release and charge control FET keep off until disconnect the charger with the battery pack.
Overdischarge Condition:
While discharging, after V DD lowers below Overdischarge Detection Voltage (Vdet2), the discharge control FET turns off after Overdischarge Detection Delay Time (Tvdet2), discharging is stopped.
Overdischarge Protection Release Condition:
When IC is in overdischarge condition, if a charger is connected to the battery pack, and the battery supply voltage becomes higher than Vdet2, the discharge control FET turns on, allowing discharging action.
The discharging state also can be reset and the output of Do becomes high when V DD becomes higher than the Overdischarge Release Voltage (Vrel2), V M is between Vdet3 and Vcha, and stays longer than Release Delay Time (Tvrel2).
When a charger is connected from the battery pack, while the V DD level is lower than Vdet2, the battery pack makes charger current allowable through the internal parasitic diode.
Charger Detect Condition:
When a battery in the overdischarge condition is connected to a charger and provided that the VM voltage is lower than the Charger Detection Voltage (Vcha), IC releases the overdischarge condition and turns on the discharge control FET as the battery voltage becomes higher than the Overdischarge Detection Voltage (Vdet2) since the charger detection function works. This action is called charger detection. When a battery in the overdischarge condition is connected to a charger and provided that the V M pin voltage is between the Charger Detection Voltage (Vcha) and Discharge Overcurrent Detection Voltage (Vdet3), IC releases the overdischarge condition when the battery voltage reaches the Overdischarge Release Voltage (Vrel2) or higher.
Discharge Overcurrent Protection:
During discharging, the current varies with load, and V M increases with the rise of the discharging current. Once V M rises up to the Discharge Overcurrent Detection Voltage (Vdet3) or higher and stays longer than the Discharge Overcurrent Delay Time (Tvdet3), IC will turn off the discharge control FET. After that Discharge Overcurrent state is removed, i.e. V M＜Vdet3, and the circuit recovers to normal condition. The current of Discharge Overcurrent protection is related to Vdet3 and the ON resistance of the two FETs (R SS (on)).
Short Circuit Protection:
This function has the same principle as the overcurrent protection. But, the Short Circuit Protection Delay Time (Tshort) is far shorter than Tvdet3 and Tvdet4, and the Short Protection Detection Voltage (Vshort) is far higher than Vdet3 and Vdet4. When the circuit is shorted, V M increases rapidly. Once V M≥Vshort, IC will turn off the discharge control FET. After the short circuit state is removed, i.e. V M＜Vdet3, the circuit recovers to the normal condition. The short circuit peak current is related to Vshort and the ON resistance of the two FETs (R SS (on)).
0V Battery Charge Function:
This function is used to recharge the connected battery whose voltage is 0V due to the self-discharge. When the 0 V battery charge starting charger voltage (V0cha) or higher is applied between P+ and P?pins (in the Typical Application Circuits of Page1) by connecting a charger, the charge control FET gate is fixed to V DD pin voltage. When the voltage between the gate and source of the charge control FET becomes equal to or higher than the turn-on voltage by the charger voltage, the charge control FET turns on to start charging. At this time, the discharge control FET is off and the charging current flows through the internal parasitic diode in the discharge control FET. When the battery voltage becomes equal to or higher than the Overdischarge Detection Voltage (Vdet2), the IC enters the normal condition
Overcharge, Timer Reset for Overcharge
Battery
Charge FET gate VM (S1)Pin
VSS
VM
Charge FET
Operation Timing Chart (2)
Overcharge/Overdischarge Detection
Vdet1Vrel1
Vrel2Bttery
VDD
VSS
VDD
VSS VM
Discharge FET gate
VM (S1)Pin
Charge FET gate
Discharge FET
Charge FET
ON
OFF ON OFF (1) Charger connected
(2) Overcharge Detection Delay Time (Tvdet1) (3) Load connected
(4) Overdischarge Detection Delay Time (Tvdet2) (5) Normal charging
Discharge Overcurrent and Short Protection
(1) Normal condition (2) Load connection
(3) Discharge Overcurrent Delay Time (Tvdet3) (4) Short Circuit Delay Time (Tshort)
Charger Connection Detection
(1) Charger connection (2) Load connection
(3) Overdischarge Detection Delay (Tvdet2)
Charge Overcurrent Detection
Battery
Discharge FET gate
Charge FET gate
VM (S1) Pin
Vrel1
Vrel2VSS VM
VM
ON
Charge FET
ON
(1) Charger connection (2) Load connection
(3) Overdischarge Detection Delay Time (Tvdet2) (4) Charge Overcurrent Detection Delay Time
Test Circuits
(1) Overcharge detection voltage and overcharge release voltage (Test circuit 1)
The Overcharge Detection Voltage (Vdet1) is the voltage between V DD and V SS to which when V1 increases and keeps the condition for overcharge delay time, The charging control FET turns off, Vs1 is the threshold of a diode, The Overcharge Release Voltage (Vrel1) is the voltage between V DD and V SS to which when V1 decreases, The charging control FET turns on, Vs1=0V.
(2) Overdischarge detection voltage and Overdischarge release voltage (Test circuit 1)
The Overdischarge Detection Voltage (Vdet2) is the voltage between V DD and V SS to which when V1 decreases and keep the condition for overdischarge delay time, The discharging control FET turns off, Vs1=V1. The overdischarge Release Voltage (Vrel2) is the voltage between V DD and V SS to which when V1 increases, The discharging control FET turns on, Vs1=0V.
(3) Discharge overcurrent detection voltage and short circuit detection voltage (Test circuit 2) The Discharge Overcurrent Detection Voltage (Vdet3) is the voltage between V M and V SS to which when V M increases and keep the condition for Discharge Overcurrent Delay Time (Tvdet3), The discharging control FET turns off, Vs1=V1.
The Short Circuit Detection Voltage (Vshort) is the voltage between V M and V SS to which when V M increases and keep the condition for Short Circuit Delay Time (Tshort), The discharging control FET turns off, Vs1=V1.
(4) Charger detection voltage and charge overcurrent detection voltage (Test circuit 2)
In the overdischarge condition, increase V1 gradually until it is between Vdet2 and Vrel2. T The voltage between V M and V SS to which when V2 decreases, when the discharging control FET turns on, Vs1=0V, is the Charger Detection Voltage (Vcha).
In the normal charging condition, the voltage between V M and V SS to which when V2 decreases, The charging control FET turns off, Vs1is the threshold of a diode, is the charge overcurrent detection voltage. It has the same value as the Charger Detection Voltage (Vcha).
(5) 0V battery charge starting charger voltage (Test circuit 2)
Set V1=V2=0V and decrease V2 gradually. The voltage between V DD and V M when the charging control FET turns on, Vs1 is the threshold of a diode, is the 0V battery charge starting charger voltage.
(6) Normal operation current consumption and power down current consumption (Test circuit 2)
Set V1=3.9V and V2=0V under normal condition, the current I DD flowing through V DD pin is the normal operation consumption current (I DD).
Set V1=3.9V and V2=0V，let IC work in normal condition, set V1 from 3.9V to 2.0V, then Let the VM floating, under overdischarge condition, the current I DD flowing through V DD pin is the power down current consumption (I STANDBY).
(7) Overcharge detection (release) delay time and overdischarge detection (release) delay time (Test circuit 3)
If V1 increases to be Vdet1 or over Vdet1 and keeps the condition for some time, the charging control FET will turn off, Vs1 is the threshold of a diode, The time is called overcharge detection delay time. It is used to judge whether overcharge happens indeed.
If V1 decreases from Vdet1 or over Vdet1 to below Vrel1, the charging control FET will turn on, Vs1=0V. The difference between this time and Treset is called overcharge release delay time.
If V1 decreases to be Vdet2 or below Vdet2 and keeps the condition for some time, the discharging control FET will turn off, Vs1=V1. The time is called overdischarge detection delay time. It is used to judge whether overdischarge happens indeed.
If V1 increases from Vdet2 or below Vdet2 to over Vrel2 and keeps the condition for some time, the discharging control FET will turn on, Vs1=0V. The time is called overdischarge release delay time.
(8) Discharge overcurrent detection delay time and short circuit detection delay time (Test circuit 4)
If V2 increases to be Vdet3 or over Vdet3 and keeps the condition for some time, the discharging control FET will turn off, Vs1=V1. The time is called Discharge Overcurrent Delay Time. It is used to judge whether Discharge Overcurrent happens indeed.
If V2 increases to be Vshort or over Vshort and keeps the condition for some time, the discharging control FET will turn off, Vs1=V1. The time is called short circuit delay time. It is used to judge whether short circuit happens indeed.
(9) Internal resistance VM -VDD and VM -VSS (Test circuit 4)
Set V1=2.0 V, V2=0 V, V1/I VM is the internal resistance R VMD.
Set V1=3.3 V, V2=1 V, V2/I VM is the internal resistance R VMS.
K
2
K
2
Package Outline
DFNWB 2.2*2.9-6L
Dimensions (mm)
Packing
MBB packing.7”reel: 3000pcs per reel.
PCB Layout
0.95
RESTRICTIONS ON PRODUCT USE