? 2006 IXYS All rights reserved
Symbol Test Conditions
Maximum Ratings
V DSS T J = 25°C to 175°C
200
V V DGR T J = 25°C to 175°C; R GS = 1 M ?200V V GSS Continuous ± 20V V GSM Transient ± 30V I D25T C = 25°C
74A I DM T C = 25°C, pulse width limited by T JM 200A I AR T C = 25°C 60A E AR T C = 25°C 40mJ E AS T C = 25°C
1.0J dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS ,10V/ns
T J ≤ 150°C, R G = 4 ?P D T C = 25°C
480
W T J -55 ... +175
°C T JM 175
°C T stg -55 ... +150
°C T L
1.6 mm (0.062 in.) from case for 10 s 300°C T SOLD Plastic body for 10 s 260
°C
M d Mounting torque (TO-3P)
1.13/10Nm/lb.in.
Weight
TO-3P 5.5g TO-268
5.0
g
G = Gate D = Drain S = Source
TAB = Drain
DS99119E(12/05)
Symbol Test Conditions
Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ.Max.BV DSS V GS = 0 V, I D = 250 μA 200V V GS(th)V DS = V GS , I D = 250μA 2.5
5.0V I GSS V GS = ±20 V DC , V DS = 0±100nA I DSS V DS = V DSS 25
μA V GS = 0 V
T J = 125°C
250μA R DS(on)
V GS = 10 V, I D
= 0.5 I D2534
m ?
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
PolarHT TM
Power MOSFET
IXTQ 74N20P V DSS =200V IXTT 74N20P
I D25
=74A R DS(on)
≤34m ?
N-Channel Enhancement Mode Avalanche Rated
Features
l International standard packages
l
Unclamped Inductive Switching (UIS)rated
l
Low package inductance -easy to drive and to protect
Advantages
l Easy to mount l Space savings l
High power density
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
? 2006 IXYS All rights reserved
? 2006 IXYS All rights reserved