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IXTQ74N20P中文资料

IXTQ74N20P中文资料
IXTQ74N20P中文资料

? 2006 IXYS All rights reserved

Symbol Test Conditions

Maximum Ratings

V DSS T J = 25°C to 175°C

200

V V DGR T J = 25°C to 175°C; R GS = 1 M ?200V V GSS Continuous ± 20V V GSM Transient ± 30V I D25T C = 25°C

74A I DM T C = 25°C, pulse width limited by T JM 200A I AR T C = 25°C 60A E AR T C = 25°C 40mJ E AS T C = 25°C

1.0J dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS ,10V/ns

T J ≤ 150°C, R G = 4 ?P D T C = 25°C

480

W T J -55 ... +175

°C T JM 175

°C T stg -55 ... +150

°C T L

1.6 mm (0.062 in.) from case for 10 s 300°C T SOLD Plastic body for 10 s 260

°C

M d Mounting torque (TO-3P)

1.13/10Nm/lb.in.

Weight

TO-3P 5.5g TO-268

5.0

g

G = Gate D = Drain S = Source

TAB = Drain

DS99119E(12/05)

Symbol Test Conditions

Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ.Max.BV DSS V GS = 0 V, I D = 250 μA 200V V GS(th)V DS = V GS , I D = 250μA 2.5

5.0V I GSS V GS = ±20 V DC , V DS = 0±100nA I DSS V DS = V DSS 25

μA V GS = 0 V

T J = 125°C

250μA R DS(on)

V GS = 10 V, I D

= 0.5 I D2534

m ?

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

PolarHT TM

Power MOSFET

IXTQ 74N20P V DSS =200V IXTT 74N20P

I D25

=74A R DS(on)

≤34m ?

N-Channel Enhancement Mode Avalanche Rated

Features

l International standard packages

l

Unclamped Inductive Switching (UIS)rated

l

Low package inductance -easy to drive and to protect

Advantages

l Easy to mount l Space savings l

High power density

TO-3P (IXTQ)

G

D

S

(TAB)

TO-268 (IXTT)

G

S

D (TAB)

? 2006 IXYS All rights reserved

? 2006 IXYS All rights reserved

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