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SI2308BDS中文资料

Vishay Siliconix

Si2308BDS

N-Channel 60-V (D-S) MOSFET

FEATURES

?TrenchFET ? Power MOSFET

?100 % R g Tested ?100 % UIS Tested

APPLICATIONS

?Battery Switch ?DC/DC Converter

PRODUCT SUMMARY

V DS (V)R DS(on) (Ω)I D (A)a Q g (Typ.)60

0.156 at V GS = 10 V 2.3 2.3 nC

0.192 at V GS = 4.5 V

2.1

Notes:

a. Based on T C = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 130 °C/W.ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter Symbol Limit

Unit Drain-Source Voltage V DS 60

Gate-Source Voltage V GS

± 20Continuous Drain Current (T J = 150 °C)T C = 25 °C I D

2.3A

T C = 70 °C 1.8

T A = 25 °C 1.9b, c T A = 70 °C 1.5b, c

Pulsed Drain Current I DM 8

Continuous Source-Drain Diode Current

T C = 25 °C

I S 1.39T A = 25 °C 0.91b, c

Avalanche Current L = 0.1 mH

I AS 6

Single-Pulse Avalanche Energy E AS

1.8mJ Maximum Power Dissipation

T C = 25 °C

P D 1.66W T C = 70 °C 1.06

T A = 25 °C 1.09b, c T A = 70 °C 0.7b, c

Operating Junction and Storage T emperature Range T J , T stg - 55 to 150

°C THERMAL RESISTANCE RATINGS

Parameter Symbol T

ypical Maximum Unit

Maximum Junction-to-Ambient b, d

≤ 5 s R thJA 90115°C/W

Maximum Junction-to-Foot (Drain)Steady State R thJF

6075

Vishay Siliconix

Si2308BDS

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter Symbol T

est Conditions Min.T

yp.Max.Unit

Static

Drain-Source Breakdown Voltage V DS V DS = 0 V , I D = 250 μA

V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA 55mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J - 5

Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA 13V Gate-Source Leakage

I GSS V DS = 0 V, V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 60 V , V GS = 0 V 1μA V DS = 60 V, V GS = 0 V , T J = 55 °C

On-State Drain Current a

I D(on) V DS ≥ 5 V, V GS = 10 V 8

A Drain-Source On-State Resistance a R DS(on) V GS = 10 V , I D = 1.9 A 0.1300.156ΩV GS = 4.5 V , I D = 1.7 A 0.1600.192

Forward T ransconductance a g fs

V DS = 15V , I D = 1.9 A

Dynamic b

Input Capacitance C iss V DS = 30 V , V GS = 0 V , f = 1 MHz 190pF

Output Capacitance

C oss 26Reverse Transfer Capacitance C rss 15Total Gate Charge Q g V DS = 30 V , V GS = 10 V , I

D = 1.9 A 4.5 6.8nC V DS = 30 V, V GS = 4.5 V, I D = 1.9 A

2.3

3.5

Gate-Source Charge Q gs 0.8Gate-Drain Charge Q gd 1Gate Resistance R g f = 1 MHz

0.6

2.8 5.6Ω

Turn-On Delay Time t d(on) V DD = 30 V, R L = 20 Ω

I D ? 1.5 A, V GEN = 10 V , R G = 1 Ω

46ns Rise Time

t r 1015Turn-Off Delay Time t d(off)

1015Fall Time

t f

710.5Turn-On Delay Time t d(on)

V DD = 30 V, R L = 20 Ω

I D = 1.5 A, V GEN = 4.5 V , R G = 1 Ω

1523ns Rise Time

t r 1624Turn-Off Delay Time t d(off) 1117Fall Time

t f

Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C

1.39A Pulse Diode Forward Current a I SM 8Body Diode Voltage

V SD I S = 1.5 A

0.8 1.2V Body Diode Reverse Recovery Time t rr I F = 1.5 A, di/dt = 100 A/μs, T J = 25 °C

1523ns Body Diode Reverse Recovery Charge Q rr 1015

nC Reverse Recovery Fall Time t a 12ns

Reverse Recovery Rise Time

t b

Output Characteristics

Transfer Characteristics

On-Resistance vs. Junction Temperature

Threshold Voltage

Single Pulse Power Array

Safe Operating Area

Vishay Siliconix

Si2308BDS

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

Power Derating, Junction-to-Case

Power Derating, Junction-to-Ambient

Vishay Siliconix

Si2308BDS

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.wendangku.net/doc/a518972561.html,/ppg?69958.

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Foot

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

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