S70N08R/S/RN
N-Channel MOSFET
Features
? 70V,80A,Rds(on)(typ)=6m ? @Vgs=10V ? High Ruggedness ? Fast Switching
? 100% Avalanche Tested ? Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced
Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Thermal Characteristics
S70N08R/S/RN Electrical Characteristics (T C=25℃unless otherwise noted)
Source-Drain Diode Characteristics (T C=25℃unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.5mH, I AS=55A, V DD=56V, R G=25 , Starting T J=25℃
3. Pulse Width ≤300 us; Duty Cycle≤2%
S70N08R/S/RN
I D - D r a i n C u r r e n t (A )
I D - D r a i n C u r r e n t (A )
I D - D r a i n C u r r e n t (A )
N o r m a l i z e d E f f e c t i v e T r a n s i e n t
Typical Characteristics
Output Characteristics
Drain Current
V DS - Drain-Source Voltage (V)
Safe Operation Area
V DS - Drain-Source Voltage (V)
T j - Junction Temperature (°C)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
S70N08R/S/RN
R D S (O N ) - O n - R e s i s t a n c e (m ? )
P t o t - P o w e r (W )
N o r m a l i z e d T h r e s h o l d V o l t a g e
R D S (O N ) - O n R e s i s t a n c e (m ?)
Typical Characteristics
Power Dissipation Drain-Source On Resistance
T j - Junction Temperature (°C)
I D - Drain Current (A)
Drain-Source On Resistance Gate Threshold Voltage
V GS - Gate-Source Voltage (V)
T j - Junction Temperature (°C)
S70N08R/S/RN
C - C a p a c i t a n c e (p F )
N o r m a l i z e d O n R e s i s t a n c e
V G S - G a t e -S o u r c e V o l t a g e (V )
I S - S o u r c e C u r r e n t (A )
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
T j - Junction Temperature (°C)
V SD - Source-Drain Voltage (V)
Capacitance
Gate Charge
V DS - Drain-Source Voltage (V)
Q G - Gate Charge (nC)
S70N08R/S/RN Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
S70N08R/S/RN Package Outline
Dimensions are shown in millimeters
R:TO220
S70N08R/S/RN RN:TO220-SHORT
S70N08R/S/RN S:TO263(D2PAK)