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RB021VA90TR中文资料

RB021VA90TR中文资料
RB021VA90TR中文资料

Diodes Rev.B 1/3

Schottky barrier diode

RB021VA-90

z Applications General rectification

z Features

1) Small power mold type (TUMD2) 2) Low V F

3) High reliability

z Structure

Silicon epitaxial planar

z

z Structure

Diodes

Rev.B

2/3

Diodes Rev.B 3/3

D I S S I P A T I O N :P R (W )

REVERSE VOLTAGE:VR(V)VR-P R CHARACTERISTICS

AMBIENT TEMPERATURE:Ta(℃)

Derating Curve?(Io-Ta)

A V E R A G E R E C T I F I E D F O R W A R D C U R R E N T :I o (A )

A V E R A G E R E C T I F I E D F O R W A R D C U R R E N T :I o (A )

CASE TEMPARATURE:Tc(℃)Derating Curve?(Io-Tc)

01

2

3

204060

80

00.1

0.2

0.3

0.40.5

255075100125

0.1

0.2

0.3

0.4

0.5

255075100125

R O W E R S E P R E V E

Appendix

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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