AOP605L中文资料

AOS Semiconductor

Product Reliability Report

AOP605/AOP605L,rev B

Plastic Encapsulated Device

ALPHA & OMEGA Semiconductor, Inc

495 Mercury Drive

Sunnyvale, CA 94085

U.S.

Tel: (408) 830-9742 https://www.wendangku.net/doc/b71650869.html,

Apr 4, 2006

This AOS product reliability report summarizes the qualification result for AOP605. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOP605passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality.

Table of Contents:

I. Product Description II. Package and Die information III. Environmental Stress Test Summary and Result IV. Reliability Evaluation V. Quality Assurance Information

I. Product Description:

The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical. Absolute Maximum Ratings T A =25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20

±20 V

T A =

25°C 7.5 -6.6 Continuous

Drain Current

T A =70°C I D 6 -5.3

Pulsed Drain Current I DM 30 -30

A

T A =

25°C 2.5 2.5

Power

Dissipation

T A =70°C P D

1.6 1.6 W Junction and Storage

Temperature Range T J , T STG

-55 to 150 -55 to 150 °C

Thermal Characteristics : n-channel, Schottky and p-channel Parameter Symbol Device Typ Max

Units Maximum Junction-to-Ambient

t ≤ 10s n-ch

40

50 Maximum Junction-to-Ambient

Steady-State R θJA n-ch 67 80 Maximum Junction-to-Lead

Steady-State R θJL n-ch 33 40 Maximum Junction-to-Ambient

t ≤ 10s p-ch

38

50 Maximum Junction-to-Ambient

Steady-State R θJA p-ch 66 80 Maximum Junction-to-Lead

Steady-State

R θJL

p-ch 30

40

°C/W

II. Die / Package Information:

AOP605 AOP605L (Green Compound) Process Standard sub-micron Standard sub-micron

low voltage complementary process

Package Type 8 lead PDIP 8 lead PDIP Lead Frame Copper with Solder Plate Copper with Solder Plate Die Attach Silver epoxy Silver epoxy Bond wire 2 mils Au wire 2 mils Au wire Mold Material Epoxy resin with silica filler Epoxy resin with silica filler

Filler % (Spherical/Flake) 90/10

100/0 Flammability Rating UL-94 V-0 UL-94 V-0 Backside Metallization Ti / Ni / Ag Ti / Ni / Ag Moisture Level Up to Level 1 * Up to Level 1*

Note * based on info provided by assembler and mold compound supplier

III. Result of Reliability Stress for AOP605 (Standard) & AOP605L (Green)

Test Item Test Condition

Time Point Lot Attribution Total

Sample size

Number of Failures

Solder Reflow

Precondition Standard: 1hr PCT+3 cycle reflow@250°c Green: 168hr 85°c /85%RH +3 cycle reflow@250°c 0hr

Standard: 11 lots Green: 4 lots

2365 pcs

HTGB Temp = 150°c,

Vgs=100% of Vgsmax

168 / 500 hrs

1000 hrs

6 lots

(Note A*)

492 pcs

77+5 pcs / lot 0

HTRB

Temp = 150°c,

Vds=80% of Vdsmax

168 / 500 hrs

1000 hrs 6 lots

(Note A*)

492 pcs

77+5 pcs / lot

HAST

130 +/- 2°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max

100 hrs

Standard: 11 lots Green: 4 lots

(Note B**) 825 pcs

50+5 pcs / lot 0

Pressure Pot

121°c, 15+/-1 PSIG, RH=100% 96 hrs Standard: 11 lots Green: 3 lots

(Note B**) 770 pcs

50+5 pcs / lot 0

Temperature Cycle

-65°c to 150 °c, air to air

250 / 500 cycles

Standard: 11 lots Green: 3 lots

(Note B**)

770 pcs

50+5 pcs / lot

DPA Internal Vision Cross-section X-ray

NA

5 5 5 5 5 5

0 CSAM

NA 5 5 0

Bond Integrity Room Temp

150°c bake

150°c bake

0hr

250hr

500hr

40

40

40

40 wires

40 wires

40 wires

Solderability 230°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AOP605and AOP605L

burn-in data up to the published date.

Note B: The pressure pot, temperature cycle and HAST reliability data for AOP605and AOP605L

comes from the AOS generic package qualification data.

IV. Reliability Evaluation

FIT rate (per billion): 10

MTTF = 11415 years

In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of

lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation

energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability

group also routinely monitors the product reliability up to 1000 hr at and performs the necessary

failure analysis on the units failed for reliability test(s).

The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in

sample size of the selected product (AOP605). Failure Rate Determination is based on JEDEC

Standard JESD 85. FIT means one failure per billion hours.

Failure Rate = Chi2x 109/ [2 (N) (H) (Af)]

= 1.83 x 109/ [2 (164) (168) (258) + 2 (2×164) (500) (258) + 2 (164) (1000) (258)] = 10

MTTF = 109/ FIT = 1.0 x 108hrs =11415 years

Chi2 = Chi Squared Distribution, determined by the number of failures and confidence interval

N = Total Number of units from HTRB and HTGB tests

H = Duration of HTRB/HTGB testing

Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)

Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]

Acceleration Factor ratio list:

55 deg C70 deg C85 deg C100 deg C115 deg C130 deg C150 deg C

Af 258

87

32

13

5.64

2.59

1

Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16

Tj u = The use junction temperature in degree (Kelvin), K = C+273.16

k = Boltzmann’s constant, 8.617164 X 10-5eV / K

V. Quality Assurance Information

Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm

Quality Sample Plan: conform to Mil-Std-105D