ZXMP6A17GTA中文资料

S E M I C O N D U C T O R S

SUMMARY

V (BR)DSS = -60V:R DS(on)= 0.125: I D = -4.1A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

·Low on-resistance ·Fast switching speed ·Low threshold ·Low gate drive ·SOT223 package

APPLICATIONS

·DC-DC converters

·Power management functions ·Relay and solenoid driving ·Motor control

DEVICE MARKING

·ZXMP 6A17

ZXMP6A17G

1

60V P-CHANNEL ENHANCEMENT MODE MOSFET

ISSUE 1 - MAY 2005

DEVICE

REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP6A17GTA 7”12mm 1000 units ZXMP6A17GTC

13”

12mm

4000 units

ORDERING INFORMATION

Top View

PINOUT

SOT223

ZXMP6A17G

S E M I C O N D U C T O R S2ISSUE 1 - MAY 2005

PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS-60V Gate-Source Voltage V GS?20V

Continuous Drain Current(V GS=-10V;T A=25°C)(b)

(V GS=-10V;T A=70°C)(b)

(V GS=-10V;T A=25°C)(a)I D-4.1

-3.3

-3.0

A

Pulsed Drain Current(c)I DM-13.7A Continuous Source Current(Body Diode)(b)I S-4.8A Pulsed Source Current(Body Diode)(c)I SM-13.7A

Power Dissipation at T A=25°C(a) Linear Derating Factor P D 2.0

16

W

mW/°C

Power Dissipation at T A=25°C(b) Linear Derating Factor P D 3.9

31

W

mW/°C

Operating and Storage Temperature Range T j:T stg-55to+150°C ABSOLUTE MAXIMUM RATING

PARAMETER SYMBOL VALUE UNIT Junction to Ambient(a)RθJA62.5°C/W Junction to Ambient(b)RθJA32.2°C/W THERMAL RESISTANCE

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.

ZXMP6A17G

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ISSUE 1 - MAY 2005

CHARACTERISTICS

ZXMP6A17G

S E M I C O N D U C T O R S

ISSUE 1 - MAY 2005

4

PARAMETER SYMBOL MIN.TYP.MAX.UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage V (BR)DSS -60

V I D =-250μA,V GS =0V Zero Gate Voltage Drain Current I DSS -1?A V DS =-60V,V GS =0V Gate-Body Leakage

I GSS 100

nA V GS =?20V,V DS =0V Gate-Source Threshold Voltage V GS(th)-1.0

V I D

=-250?A,V DS =V GS

Static Drain-Source On-State Resistance (1)

R DS(on)0.1250.190

??V GS =-10V,I D =-2.2A V GS =-4.5V,I D =-1.8A Forward Transconductance (1)(3)g fs

4.7

S

V DS =-15V,I D =-2.2A

DYNAMIC (3)Input Capacitance C iss 637pF V DS =-30V,V GS =0V,f=1MHz

Output Capacitance

C oss 70pF Reverse Transfer Capacitance C rss

53

pF

SWITCHING (2)(3)Turn-On Delay Time t d(on) 2.6ns V DD =-30V,I D =-1A R G 6.0?,V GS =-10V

Rise Time

t r 3.4ns Turn-Off Delay Time t d(off)26.2ns Fall Time t f 11.3ns Gate Charge Q g 9.8nC V DS =-30V,V GS =-5V,I D =-2.2A

Total Gate Charge Q g 17.7nC V DS =-30V,V GS =-10V,I D =-2.2A

Gate-Source Charge Q gs 1.6nC Gate-Drain Charge Q gd

4.4

nC

SOURCE-DRAIN DIODE Diode Forward Voltage (1)V SD -0.85-0.95

V T J =25?C,I S =-2A,V GS =0V

Reverse Recovery Time (3)t rr 25.1ns T J =25?C,I F =-1.7A,di/dt=100A/?s

Reverse Recovery Charge (3)

Q rr

27.2

nC

ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Width ?300μ s. Duty cycle ?2% .

(2) Switching characteristics are independent of operating junction temperature.(3) For design aid only, not subject to production testing.

ZXMP6A17G

S E M I C O N D U C T O R S

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ISSUE 1 - MAY 2005

ISSUE 1 - MAY 2005 S E M I C O N D U C T O R S6

ZXMP6A17G

S E M I C O N D U C T O R S

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Europe

Zetex GmbH

Streitfeldstra?e 19D-81673 München Germany

Telefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49europe.sales@https://www.wendangku.net/doc/ba7601026.html,

Americas

Zetex Inc

700 Veterans Memorial Hwy Hauppauge, NY 11788USA

Telephone: (1) 631 360 2222Fax: (1) 631 360 8222usa.sales@https://www.wendangku.net/doc/ba7601026.html,

Asia Pacific

Zetex (Asia) Ltd

3701-04Metroplaza Tower 1Hing Fong Road, Kwai Fong Hong Kong

Telephone: (852) 26100 611Fax: (852) 24250 494asia.sales@https://www.wendangku.net/doc/ba7601026.html,

Corporate Headquarters

Zetex Semiconductors plc

Zetex Technology Park,Chadderton Oldham, OL9 9LL United Kingdom

Telephone (44) 161 622 4444Fax: (44) 161 622 4446hq@https://www.wendangku.net/doc/ba7601026.html,

These offices are supported by agents and distributors in major countries world-wide.

This publication is issued to provide outline information only which (unless agreed by the Company in writing)may not be used,applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned.The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.For the latest product information, log on to https://www.wendangku.net/doc/ba7601026.html,

?Zetex

Semiconductors plc 2005

DIM

Millimeters Inches DIM

Millimeters Inches Min Max Min Max Min

Max

Min

Max

A - 1.80-0.071e 2.30 BSC 0.0905 BSC A10.020.100.00080.004e1 4.60 BSC 0.181 BSC b 0.660.840.0260.033E 6.707.300.2640.287b2 2.90 3.100.1140.122E1 3.30 3.700.1300.146C 0.230.330.0090.013L 0.90-0.355-D

6.30

6.70

0.248

0.264

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PACKAGE DIMENSIONS