SI4136DY中文资料

Vishay Siliconix

Si4136DY

N-Channel 20-V (D-S) MOSFET

FEATURES

?Halogen-free According to IEC 61249-2-21 ?TrenchFET ? Power MOSFET ?100 % R g and UIS Tested

APPLICATIONS

?OR-ing ?DC/DC

PRODUCT SUMMARY

V

DS (V)R DS(on) (Ω)I D (A)a Q g (Typ.)20

0.002 at V GS = 10 V 4634 nC

0.0025 at V GS = 4.5 V

41

Notes:

a.Based on T C = 25 °C.

b.Surface Mounted on 1" x 1" FR4 board.

c.t = 10 s.

d.Maximum under Steady State conditions is 80 °C/W.

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V DS 20

V

Gate-Source Voltage V GS ± 20

Continuous Drain Current (T J = 150 °C)T C = 25 °C I D

46A

T C = 70 °C 37

T A = 25 °C 31b, c T A = 70 °C 24.7b, c

Pulsed Drain Current I DM 70

Continuous Source-Drain Diode Current T C = 25 °C I S 7

T A = 25 °C 3.1b, c

Single Pulse Avalanche Current L = 0.1 mH

I AS 30

Avalanche Energy

E AS 45mJ Maximum Power Dissipation T C = 25 °C P D 7.8W

T C = 70 °C 5

T A = 25 °C 3.5b, c T A = 70 °C 2.2b, c

Operating Junction and Storage T emperature Range T J , T stg - 55 to 150°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient b, d

t ≤ 10 s R thJA 2935°C/W

Maximum Junction-to-Foot (Drain)Steady State R thJF 1316

Si4136DY

Vishay Siliconix

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

Threshold Voltage

Vishay Siliconix

Si4136DY

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

Power Derating, Junction-to-Case

Power Derating, Junction-to-Ambient

Vishay Siliconix

Si4136DY

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.wendangku.net/doc/b817211796.html,/ppg?64718.

Normalized Thermal Transient Impedance, Junction-to-Ambient

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

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