当前位置：文档库 › STP9NB60中文资料

STP9NB60中文资料

STP9NB60STP9NB60FP

N -CHANNEL 600V -0.7?-9A TO-220/TO220FP

PowerMESH ?MOSFET

s TYPICAL R DS(on)=0.7?

s EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY ?process,STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.The new patent pending strip layout coupled with the Company’s proprietary edge termination structure,gives the lowest RDS(on)per area,exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

s HIGH CURRENT,HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ?

INTERNAL SCHEMATIC DIAGRAM

January 2000TO-220TO-220FP

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value

Unit STP9NB60

STP9NB60FP V DS Drain-source Voltage (V GS =0)600V V DGR Drain-gate Voltage (R GS =20k ?)600V V GS Gate-source Voltage

±30

I D Drain Current (continuous)at T c =25o C 9.09.0(*)A I D Drain Current (continuous)at T c =100o

C 5.7 5.7(*)A I DM (?)Drain Current (pulsed)

3636A P tot

Total Dissipation at T c =25o C 12540W Derating Factor

1.00.32W/o C dv/dt(1)Peak Diode Recovery voltage slope 4.5 4.5V/ns V ISO Insulation Withstand Voltage (DC)

2000

T s tg Storage Temperature

-65to 150

o C T j

Max.Operating Junction Temperature

150

(?)Pulse width limited by safe operating area (1)I SD ≤9A,di/dt ≤200A/μs,V DD ≤V (BR)DSS ,Tj ≤T JMAX

(*)Limited only by maximum temperature allowed

TYPE V DSS R DS(on)I D STP9NB60STP9NB60FP

600V 600V

<0.8?<0.8?

9.0A 9.0A

1/9

THERMAL DATA

TO-220TO-220FP

R thj-case Thermal Resistance Junction-case Max 1.0 3.12o C/W

R thj-amb R thc-sink

T l Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

o C/W

o C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I AR Avalanche Current,Repetitive or Not-Repetitive

(pulse width limited by T j max,δ <1%)

E AS Single Pulse Avalanche Energy

(starting T j=25o C,I D=I AR,V DD=50V)

850mJ

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source

Breakdown Voltage

I D=250μA V GS=0600V

I DSS Zero Gate Voltage

Drain Current(V GS=0)V DS=Max Rating

V DS=Max Rating T c=125o C

μA

I GSS Gate-body Leakage

Current(V DS=0)

V GS=±30V±100nA ON(?)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold

Voltage

V DS=V GS I D=250μA345V

R DS(on)Static Drain-source On

Resistance

V GS=10V I D=3A0.70.8?

I D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma x

V GS=10V

9.0A DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g f s(?)Forward

Transconductance

V DS>I D(o n)x R DS(on)ma x I D=4.5A 3.0 6.5S

C iss C os s C rss Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V DS=25V f=1MHz V GS=01480

210

1924

273

STP9NB60/FP 2/9

ELECTRICAL CHARACTERISTICS(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(on) t r Turn-on Time

Rise Time

V DD=300V I D=4.5A

R G=4.7 ?V GS=10V

(see test circuit,figure3)

Q g Q gs Q gd Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V DD=480V I D=9.0A V GS=10V40

10.5

17.5

56nC

SWITCHING OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t r(Voff) t f t c Off-voltage Rise Time

Fall Time

Cross-over Time

V DD=480V I D=9.0A

R G=4.7 ?V GS=10V

(see test circuit,figure5)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I SD I SDM(?)Source-drain Current

Source-drain Current

(pulsed)

9.0

V SD(?)Forward On Voltage I SD=9.0A V GS=0 1.6V

t rr Q rr I RRM Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

I SD=9.0A di/dt=100A/μs

V DD=100V T j=150o C

(see test circuit,figure5)

600

5.4

μC

(?)Pulsed:Pulse duration=300μs,duty cycle1.5%

(?)Pulse width limited by safe operating area

Safe Operating Area for TO-220Safe Operating Area for TO-220FP

STP9NB60/FP

3/9

Thermal Impedance for TO-220 Output Characteristics Transconductance Thermal Impedance forTO-220FP Transfer Characteristics

Static Drain-source On Resistance

STP9NB60/FP 4/9

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature

Source-drain Diode Forward Characteristics Capacitance Variations

Normalized On Resistance vs Temperature

STP9NB60/FP

5/9

Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test Circuit

Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery Times

STP9NB60/FP

6/9

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

D 1

Dia.

F 1

H 2

F 2

G 1

TO-220MECHANICAL DATA

P011C

STP9NB60/FP

7/9

DIM.

mm inch MIN.

TYP.

MAX.MIN.TYP.

MAX.A 4.4 4.60.1730.181B 2.5 2.70.0980.106D 2.5 2.750.0980.108E 0.450.70.0170.027F 0.7510.0300.039F1 1.15 1.70.0450.067F2 1.15 1.70.0450.067G 4.95 5.20.1950.204G1 2.4 2.70.0940.106H 10

10.4

0.393

0.409

L216

0.630

L328.630.6 1.126 1.204L49.810.60.3850.417L615.916.40.6260.645L799.30.3540.366?

3 3.2

0.118

0.126

G 1

123

F 2

F 1

TO-220FP MECHANICAL DATA

STP9NB60/FP

8/9

Information furnished is believed to be accurate and reliable.However,STMicroelect r onics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all informat i on previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

STMicroelectronics GROUP OF COMPANIES

Australia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japa n -Malaysia -Malta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A.

https://www.wendangku.net/doc/cf820699.html,

STP9NB60/FP

9/9