IRFR3410TRLPBF;IRFU3410PBF;IRFR3410TRRPBF;IRFR3410TRPBF;IRFR3410PBF;中文规格书,Datasheet资料
Symbol
Parameter
Max.
Units
V DS Drain-Source Voltage 100V V GS Gate-to-Source Voltage ± 20I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 31 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 22A I DM Pulsed Drain Current 125P D @T C = 25°C Maximum Power Dissipation 110W P D @T A = 25°C Maximum Power Dissipation 3.0
Linear Derating Factor 0.71 mW°C dv/dt Peak Diode Recovery dv/dt 15V/ns T J Operating Junction and -55 to + 175°C T STG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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12/03/04
IRFR3410PbF IRFU3410PbF
HEXFET ? Power MOSFET
V DSS
R DS(on) max
I D
100V
39m ?
31A
Notes through are on page 10
D-Pak IRFR3410I-Pak IRFU3410
PD - 95514A
l High frequency DC-DC converters l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
Parameter
Typ.
Max.
Units
R θJC
Junction-to-Case
––– 1.4R θJA Junction-to-Ambient (PCB mount)*–––40°C/W
R θJA
Junction-to-Ambient
–––
110
Thermal Resistance
Absolute Maximum Ratings
IRFR/U3410PbF
Static @ T J = 25°C (unless otherwise specified)
Parameter Min.Typ.Max.Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage 100––––––V V GS = 0V, I D = 250μA
?V (BR)DSS /?T J Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I D = 1mA R DS(on)Static Drain-to-Source On-Resistance –––3439m ?V GS = 10V, I D = 18A V GS(th)Gate Threshold Voltage 2.0––– 4.0V V DS = V GS , I D = 250μA
––––––20μA
V DS = 100V, V GS = 0V
––––––250V DS = 80V, V GS = 0V, T J = 150°C
Gate-to-Source Forward Leakage ––––––200V GS = 20V
Gate-to-Source Reverse Leakage ––––––-200nA
V GS = -20V
I GSS I DSS Drain-to-Source Leakage Current
IRFR/U3410PbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics
V DS
, Drain-to-Source Voltage (V)110
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A )
V DS , Drain-to-Source Voltage (V)
I D , D r a i n -t o -
S o u r c e C u r r e n t (A )
4.0
5.0
6.0
7.0
8.0
9.0
V GS , Gate-to-Source Voltage (V)
110
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (Α)
-60-40-20
20
406080100120140160180
T J , Junction Temperature (°C)
0.0
1.0
2.0
3.0
R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e
(N o r m a l i z e d )
IRFR/U3410PbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
V DS , Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C , C a p a c i t a n c e (p F )
10
20
30
40
50
60
Q G Total Gate Charge (nC)
04
8
12
16
20
V G S ,
G a t e -t o -S o u r c e V o l t a g e (V )
0.0
0.5
1.0
1.5
2.0
V SD , Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0I S D , R e v e r s e D r a i n C u r r e n t (A )
1
10
1001000
V DS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A
)
IRFR/U3410PbF
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Fig 10a.
Switching Time Test Circuit
V V d(on)r d(off)f
Fig 10b. Switching Time Waveforms
V DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
175
T C , Case Temperature (°C)
048121620242832I D , D r a i n C u r r e n t (A )
IRFR/U3410PbF
6
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V
DS
Current Sampling Resistors
V GS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V DD
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
050
100
150
200
250
E A S , S i n g l
e P u l s e A v a l a n c h e E n e r g y (m J )
IRFR/U3410PbF
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Fig 14. For N-Channel HEXFET ? Power MOSFETs
* V GS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
V DD
I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches)
IRFR/U3410PbF
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Repetitive rating; pulse width limited by
max. junction temperature.
I SD ≤ 18A, di/dt ≤ 360A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
Notes:
Starting T J = 25°C, L = 0.85mH
R G = 25?, I AS = 18A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
C oss eff. is a fixed capacitance that gives the same charging time
as C oss while V DS is rising from 0 to 80% V DSS
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at https://www.wendangku.net/doc/c53523352.html, for sales contact information .12/04
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )15.7 ( .619 )8.1 ( .318 )7.9 ( .312 )
12.1 ( .476 )11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
分销商库存信息:
IR
IRFR3410TRLPBF IRFU3410PBF IRFR3410TRRPBF IRFR3410TRPBF IRFR3410PBF