SBP13009中文资料
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V CES Collector-Emitter Voltage ( V BE = 0 )700V V CEO Collector-Emitter Voltage ( I B = 0 )400V V EBO Emitter-Base Voltage ( I C = 0 )9.0V I C
Collector Current
12A I CM Collector Peak Current ( t P ＜ 10 ms )25A I B Base Current
6.0A I BM Base Peak Current ( t P ＜ 10 ms )12A P C Total Dissipation at T C = 25 °C 100W T STG Storage Temperature
- 65 ~ 150°C T J
Max. Operating Junction Temperature
150
°C
Thermal Characteristics
Symbol
Parameter
Value
Units
R θJC Thermal Resistance, Junction-to-Case 1.25°C/W R θJA
Thermal Resistance, Junction-to-Ambient
40
°C/W
SBP13009
Oct, 2002. Rev. 21/6
Features
- Very High Switching Speed (Typical 40ns@8.0A)- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 320mV@8.0A/1.6A)- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-acteristic required such as switching mode power supply.
High Voltage Fast-Switching NPN Power Transistor
TO-220
SemiWell Semiconductor
1
2
3
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Electrical Characteristics ( T C = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
Min
Typ
Max
Units
I CEV
Collector Cut-off Current ( V BE = - 1.5V )
V CE = 700V
V CE = 700V T C = 100 °C -
-
1.05.0
mA
V CEO(sus)Collector-Emitter Sustaining Voltage ( I B = 0 )
I C = 10 mA
400--
V
V CE(sat)Collector-Emitter Saturation Voltage
I C = 5.0A I B = 1.0A I C = 8.0A I B = 1.6A I C = 12A I B = 3.0A I C = 8.0A I B = 1.6A T C = 100 °C --
0.51.01.52.0
V
V BE(sat)Base-Emitter Saturation Voltage I C = 5.0A I B = 1.0A I C = 8.0A I B = 1.6A I C = 8.0A I B = 1.6A T C = 100 °C --
1.21.61.5
V
h FE DC Current Gain I C = 5.0A V CE = 5V I C = 8.0A V CE = 5V 106
-
3030
t s t f
Resistive Load Storage Time Fall Time I C = 8.0A V CC = 125V I B1 = 1.6A I B2 = - 1.6A T P = 25?
-
1.50.16 3.00.4
?
t s t f
Inductive Load Storage Time Fall Time V CC = 15V I C = 8.0A I B1= 1.6A V BE(off) = 5V L C = 0.2mH V clamp = 300V -
0.60.04 2.00.1
?
t s t f
Inductive Load Storage Time Fall Time
V CC = 15V I C = 8.0A I B1= 1.6A V BE(off) = 5V L C = 0.2mH V clamp = 300V T C = 100 °C
-
0.80.05 2.50.15
?
SBP13009
2/6
※ Notes :
Pulse Test : Pulse width ≤ 300?, Duty cycle ≤ 2%
SBP13009
4/6
SBP13009
SBP13009
5/6
Inductive Load Switching & RBSOA Test Circuit
Dim.mm Inch Min.Typ.
Max.Min.Typ.
Max.A 9.710.10.3820.398B 6.3 6.70.2480.264C 9.09.470.3540.373D 12.813.30.5040.524E 1.2
1.40.047
0.055
F 1.70.067
G 2.5
0.098
H 3.0 3.40.1180.134I 1.25 1.40.0490.055J 2.4 2.70.0940.106K 5.0 5.150.1970.203L 2.2 2.60.0870.102M 1.42 1.620.0560.064N 0.450.60.0180.024O
0.7
0.9
0.027
0.035
φ
3.6
0.142
6/6
TO-220 Package Dimension
SBP13009