VIO50-12P1中文资料

IXYS reserves the right to change limits, test conditions and dimensions.

303

I C25=49 A

V CES

=1200 V V CE(sat) typ.=

3.1 V

Symbol Conditions Maximum Ratings

V CES T VJ = 25°C to 150°C

1200V V GES ± 20V I C25T C = 25°C 49A I C80T C = 80°C

33A

t SC

V CE = V CES ; V

GE = ±15 V; R G = 47 ?; T VJ = 125°C 10μs (SCSOA)non-repetitive P

tot T C = 25°C 208

W

Symbol

Conditions Characteristic Values

(T = 25°C, unless otherwise specified)

IGBT Modules in ECO-PAC 2

Short Circuit SOA Capability Square RBSOA

Preliminary data sheet

Pin arangement see outlines

Features

?NPT IGBT's

- positive temperature coefficient of saturation voltage - fast switching ?FRED diodes

- fast reverse recovery - low forward voltage

?Industry Standard Package

- solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages

? space and weight savings ? reduced protection circuits

? leads with expansion bend for stress relief Typical Applications ? AC and DC motor control ? AC servo and robot drives ? power supplies ? welding inverters

IXYS reserves the right to change limits, test conditions and dimensions.

303

I F25T C = 25°C 49A I F80

T C = 80°C 31

A

Symbol Conditions

Characteristic Values

T VJ -40...+150°C T stg -40...+150

°C V ISOL I ISOL ≤ 1 mA; 50/60 Hz 3000V~M d mounting torque (M4) 1.5 - 2.0Nm 14 - 18

lb.in.a Max. allowable acceleration 50

m/s 2

Symbol Conditions

Characteristic Values min.typ.max.d S Creepage distance on surface (Pin to heatsink)11.2mm d A Strike distance in air (Pin to heatsink)11.2

mm Weight

24

g

Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.

min.typ.max.R 25T = 25°C

4.75

5.0 5.25k ?

B 25/503375

K

IXYS reserves the right to change limits, test conditions and dimensions.

303

Fig. 1 Typ. output characteristics

Fig. 2 Typ. output characteristics

Fig. 3 Typ. transfer characteristics

Fig. 4 Typ. forward characteristics of

free wheeling diode

Fig. 5 Typ. turn on gate charge

Fig. 6 Typ. turn off characteristics of

free wheeling diode

1

2

3

4

567012345

67

20

40

60

80V CE

V V CE

A V Q G

-di/dt

4681012

1416V V GE

I 012

34

V V F

I F

42T120

42T120

IXYS reserves the right to change limits, test conditions and dimensions.

303

Fig. 11 Reverse biased safe operating area Fig. 12

Typ. transient thermal impedance RBSOA

0,000010,00010,001

0,010,1

110

200

400

600

800100012001400V CE

t

s V