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IRF740中文资料

IRF740

N -CHANNEL 400V -0.48?-10A -TO-220

PowerMESH ?MOSFET

s TYPICAL R DS(on)=0.48?

s EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY ?process.This technology matches and improves the performances compared with standard parts from various sources.

APPLICATIONS

s HIGH CURRENT SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)s DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL,AND LIGHTING EQUIPMENT.

INTERNAL SCHEMATIC DIAGRAM

October 1998ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value Unit V DS Drain-source Voltage (V GS =0)400V V DGR Drain-gate Voltage (R GS =20k ?)400V V GS Gate-source Voltage

±20V I D Drain Current (continuous)at T c =25o C 10A I D Drain Current (continuous)at T c =100o C 6.3A I DM (?)Drain Current (pulsed)

40A P tot Total Dissipation at T c =25o C 125W Derating Factor

1.0W/o C dv/dt(1)Peak Diode Recovery voltage slope 4.0V/ns

T s tg Storage Temperature

-65to 150

o C T j

Max.Operating Junction Temperature

150

(?)Pulse width limited by safe operating area (1)I SD ≤10A,di/dt ≤120 Α/μs,V DD ≤V (BR)DSS ,Tj ≤T JMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

TYPE V DSS R DS(on)I D IRF740

400V

<0.55?

10A

TO-220

1/8

THERMAL DATA

R thj-case Rthj-amb R thc-sink

T l Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

1.0

62.5

0.5

300

o C/W

oC/W

o C/W

o C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I AR Avalanche Current,Repetitive or Not-Repetitive

(pulse width limited by T j max)

10A

E AS Single Pulse Avalanche Energy

(starting T j=25o C,I D=I AR,V DD=50V)

520mJ

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source

Breakdown Voltage

I D=250μA V GS=0400V

I DSS Zero Gate Voltage

Drain Current(V GS=0)V DS=Max Rating

V DS=Max Rating T c=125o C

μA

I GSS Gate-body Leakage

Current(V DS=0)

V GS=±20V±100nA ON(?)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold

Voltage

V DS=V GS I D=250μA234V

R DS(on)Static Drain-source On

Resistance

V GS=10V I D=5.3A0.480.55?

I D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma x

V GS=10V

10A DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g f s(?)Forward

Transconductance

V DS>I D(o n)x R DS(on)ma x I D=6A 5.8S

C iss C os s C rss Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V DS=25V f=1MHz V GS=01400

220

IRF740 2/8

ELECTRICAL CHARACTERISTICS(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(on) t r Turn-on Time

Rise Time

V DD=200V I D=5A

R G=4.7 ?V GS=10V

(see test circuit,figure3)

Q g Q gs Q gd Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V DD=320V I D=10.7A V GS=10V35

43nC

SWITCHING OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t r(Voff) t f t c Off-voltage Rise Time

Fall Time

Cross-over Time

V DD=320V I D=10A

R G=4.7 ?V GS=10V

(see test circuit,figure5)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I SD I SDM(?)Source-drain Current

Source-drain Current

(pulsed)

V SD(?)Forward On Voltage I SD=10A V GS=0 1.6V

t rr Q rr I RRM Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

I SD=10A di/dt=100A/μs

V DD=100V T j=150o C

(see test circuit,figure5)

370

3.2

μC

(?)Pulsed:Pulse duration=300μs,duty cycle1.5%

(?)Pulse width limited by safe operating area

Safe Operating Area Thermal Impedance

IRF740

3/8

Output Characteristics Transconductance

Gate Charge vs Gate-source Voltage Transfer Characteristics

Static Drain-source On Resistance Capacitance Variations

IRF740 4/8

Normalized Gate Threshold Voltage vs Temperature

Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature

IRF740

5/8

Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.1:Unclamped Inductive Waveform Fig.4:Gate Charge test Circuit

Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery Times

IRF740

6/8

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

D 1

Dia.

F 1

H 2

F 2

G 1

TO-220MECHANICAL DATA

P011C

IRF740

7/8

IRF740

Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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