AOU402中文资料

Symbol Typ Max R θJA

100125R θJC

4

7.5

Maximum Junction-to-Case B

Steady-State

°C/W

Thermal Characteristics Parameter

Units Maximum Junction-to-Ambient A

Steady-State °C/W AOU402

AOU402

Symbol

Min Typ

Max

Units BV DSS 60

V 1T J =55°C

5I GSS 100nA V GS(th)1 2.4

3

V I D(ON)30

A 4760

T J =125°C

856785m ?g FS 14S V SD 0.74

1V I S

12

A C iss 385

540pF C oss 55pF C rss 20pF R g

1.352?Q g (10V)7.5

10nC Q g (4.5V) 3.85nC Q gs 1.2nC Q gd 1.9nC t D(on) 4.2

ns t r 3.4ns t D(off)16ns t f 2ns t rr 27.635ns Q rr

30

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Charge I F =12A, dI/dt=100A/μs

Maximum Body-Diode Continuous Current

Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =30V, R L =2.5?, R GEN =3?

Gate resistance

V GS =0V, V DS =0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge V GS =10V, V DS =30V, I D =12A

Gate Source Charge Gate Drain Charge Total Gate Charge m ?V GS =4.5V, I D =6A

I S =1A, V GS =0V

V DS =5V, I D =12A

R DS(ON)Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage I DSS μA Gate Threshold Voltage V DS =V GS , I D =250μA V DS =48V, V GS =0V

V DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage On state drain current

I D =10mA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =12A

Reverse Transfer Capacitance I F =12A, dI/dt=100A/μs

V GS =0V, V DS =30V, f=1MHz SWITCHING PARAMETERS A: The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.

G. The maximum current rating is limited by bond-wires. Rev1: August 2005

AOU402

AOU402

AOU402