TL H 5711
LP311Voltage Comparator
February 1995
LP311Voltage Comparator
General Description
The LP311is a low power version of the industry-standard LM311 It takes advantage of stable high-value ion-implant-ed resistors to perform the same function as an LM311 with a 30 1reduction in power drain but only a 6 1slowdown of response time Thus the LP311is well suited for battery-powered applications and all other applications where fast response is not needed It operates over a wide range of supply voltages from 36V down to a single 3V supply with less than 200m A drain but it is still capable of driving a 25mA load The LP311is quite easy to apply without any oscil-lation if ordinary precautions are taken to minimize stray coupling from the output to either input or to the balance pins (as described in the LM311datasheet Application Hints)
Features
Y Low power drain 900m W on 5V supply
Y Operates from g 15V or a single supply as low as 3V Y Output can drive 25mA
Y Emitter output can swing below negative supply Y Response time 1 2m s Y Same pin-out as LM311
Y Low input currents 2nA of offset 15nA of bias
Y
Large common-mode input range b 14 6V to 13 6V with g 15V supply
Applications
Y Level-detector for battery-powered instruments Y Low-power lamp or relay driver Y
Low-power zero-crossing detector
Schematic Diagram
TL H 5711–7
Connection Diagram
Dual-In-Line Package
TL H 5711–4
Top View
Order Number LP311M or LP311N See NS Package Numbers M08A or N08E
C 1995National Semiconductor Corporation
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Total Supply Voltage(V8–4)36V Collector Output to Negative Supply Voltage(V7–4)40V Collector Output to Emitter Output40V Emitter Output to Negative Supply Voltage(V1–4)g30V Differential Input Voltage g30V Input Voltage(Note1)g15V Power Dissipation(Note2)500mW Output Short Circuit Duration10sec Operating Temperature Range0 C to70 C Storage Temperature Range b65 C to150 C Lead Temperature(Soldering 10seconds)260 C
Electrical Characteristics
These specifications apply for V S e g15V and0 C s T A s70 C unless otherwise specified
Parameter Conditions Min Typ Max Units Input Offset Voltage(Notes3 4)T A e25 C R S s100k2 07 5mV
Input Offset Current(Notes3 4)T A e25 C2 025nA Input Bias Current(Note3)T A e25 C15100nA Voltage Gain T A e25 C R L e5k40200V mV Response Time(Note5)T A e25 C1 2m s
Saturation Voltage(Note6)V IN s b10mV I OUT e25mA0 41 5V
T A e25 C
Strobe Current(Note7)T A e25 C100200300m A
Output Leakage Current V IN t10mV V OUT e35V0 2100nA
T A e25 C
Input Offset Voltage(Notes3 4)R S s100k10mV Input Offset Current(Notes3 4)35nA Input Bias Current(Note3)150nA Input Voltage Range V b a0 5a13 7 b14 7V a b1 5V
Saturation Voltage(Note6)V a t4 5V V b e0V0 10 4V
V IN s b10mV I SINK s1 6mA
Positive Supply Current T A e25 C Output on150300m A Negative Supply Current T A e25 C80180m A Minimum Operating Voltage T A e25 C3 03 5V Note1 This rating applies for g15V supplies The positive input voltage limit is30V above the negative supply The negative input voltage limit is equal to the negative supply voltage or30V below the positive supply whichever is less
Note2 The maximum junction temperature of the LP311is85 C For operating at elevated temperatures devices in the dual-in-line package must be derated based on a thermal resistance of160 C W junction to ambient
Note3 The offset voltage offset current and bias current specifications apply for any supply voltage from a single4V supply up to g15V supplies
Note4 The offset voltages and offset currents given are the maximum values required to drive the output within a volt of either supply with1mA load Thus these parameters define an error band and take into account the worst-case effects of voltage gain and input impedance
Note5 The response time specified is for a100mV input step with5mV overdrive
Note6 Saturation voltage specification applies to collector-emitter voltage(V7-1)for V COLLECTOR s(V a b3V)
Note7 This specification gives the range of current which must be drawn from the strobe pin to ensure the output is properly disabled Do not short the strobe pin to ground It should be current driven 100m A to300m A
2
Typical Performance Characteristics
Input Characteristics Input Bias Current Input Offset Current
Common Mode Limits Transfer Function Output Saturation Voltage (Collector Output)
Response Time for Various Input Overdrives Response Time for Various
Input Overdrives
Output Saturation Voltage
(Emitter Output)
Response Time for Various Input Overdrives Response Time for Various
Input Overdrives
Output Limiting
Characteristics
TL H 5711–5 3
Typical Performance Characteristics
(Continued)
Supply Current
Supply Current
Leakage Currents
TL H 5711–6
Applications Information
For applications information and typical applications refer to the LM311datasheet
Auxiliary Circuits
Strobing
TL H 5711–1
Note Do not ground strobe pin
Offset Balancing
TL H 5711–2
Test Circuits
Test Circuit 1(Collector Output)
TL H 5711–8
Test Circuit 2(Emitter Output)
TL H 5711–9
Test Circuit 3(Collector Output)TL H 5711–10
Test Circuit 4(Emitter Output)
TL H 5711–11
4
Physical Dimensions inches(millimeters)
Order Number LP311M
NS Package Number M08A
5
L P 311V o l t a g e C o m p a r a t o r
Physical Dimensions inches (millimeters)(Continued)
Molded Dual-In-Line Package (N)
Order Number LP311N NS Package Number N08E
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectiveness
be reasonably expected to result in a significant injury to the user
National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation
Europe
Hong Kong Ltd
Japan Ltd
1111West Bardin Road
Fax (a 49)0-180-5308586
13th Floor Straight Block Tel 81-043-299-2309