HY4903P-HOOYI.pdf
Super Low Gate Charge 290A
Pin
Description Features
?V/R DS(ON)=1.6m ? (typ.) @ V GS =10V
30 Advanced high cell density Trench technology Excellent CdV/dt effect decline
100% EAS Guaranteed
Halogen - Free Device Available
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G
D
S
TO-220FB-3L
G
D
S
TO-263-2L
Package Code ?High Frequency Synchronous Buck
Converters for Computer Processor Power
?High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Applications
N-Channel MOSFET
G
B: TO-263-2L P : TO-220FB-3L B HOOYI HOOYI
HOOYI HY4903
reserves the right to make changes to improve reliability or manufacturability without notice,and advise customers to obtain the latest version of relevant information to verify before placing orders.
Ordering and Marking Information
Note:
lead-free products contain molding compounds/die attach materials and 100%matte tin plate termination finish;which are fully compliant with RoHS.lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature.defines “Green”to mean lead-free (RoHS compliant)and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
G : Lead Free Device P
Date Code Assembly Material HOOYI YYXXXJWW G YYXXX WW
HY4903
YYXXXJWW G
Absolute Maximum Ratings
Electrical Characteristics (T C =
25°C Unless Otherwise Noted)
Note?G ** Drain current is limited by junction temperature *** VD=24V
* Repetitive rating ; pulse width limiited by junction temperature
Electrical Characteristics (Cont.) (T
C
= 25°
C Unless Otherwise Noted)
Note* : Pulse test ; pulse width≤300μs, duty cycle≤2%.
.
100
Typical Operating Characteristics
I D - D r a i n C u r r e n t (A )
Drain Current
50150200250300350Power Dissipation
P t o t - P o w e r (W )
50
150200250
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Safe Operation Area
T c -Temperature (°C)
T c -Case Temperature (°C)
Case 1
10
100
V DS -Drain -Source Voltage (V)I D - D r a i n C u r r e n t (A )
V DS - Drain-Source Voltage (V)I D - D r a i n C u r r e n t (A )
Output Characteristics
Drain-Source On Resistance
I D - Drain Current (A)
V GS - Gate - Source Voltage (V)
R D S (O N ) - O n - R e s i s t a n c e (m ?)
T j - Junction Temperature (°C)
Gate Threshold Voltage
N o r m a l i z e d T h r e s h o l d V l o t a g e
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance 0
80400480560640
2345
678
Drain-Source On Resistance N o r m a l i z e d O n R e s i s t a n c e
T j - Junction Temperature (°C)V SD - Source-Drain Voltage (V)
Source-Drain Diode Forward
I S - S o u r c e C u r r e n t (A )
Gate Charge
Q G - Gate Charge (nC)
V G S - G a t e -s o u r c e V o l t a g e (V )
Typical Operating Characteristics (Cont.)
1
23456789
10
1
-50-25
25
50
75100125150175
0.2
0.40.60.81.01.21.41.61.8
2.0
2.2
V DS -Drain -Source Voltage (V)
C - C a p a c i t a n c e (p F )
Capacitance
02000
4000600080001000012000140001600018000
2000022000
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Package Information
TO-220FB-3L
TO-263-2L
Classification
Profile
Devices Per Unit
Classification Reflow Profiles
Reliability Test Program