当前位置：文档库 › WF4M16-150DTM5A中文资料

WF4M16-150DTM5A中文资料

White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

November 1999 Rev.3

2x2Mx16 5V FLASH MODULE ADVANCED*

s Data Polling and Toggle Bit feature for detection of program or erase cycle completion.s Supports reading or programming data to a sector not being erased.

s Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation, Separate Power and Ground Planes to improve noise immunity s RESET pin resets internal state machine to the read mode.s cycle completion.

This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice.Note: For programming information refer to Flash Programming 16M5 Application Note.

FEATURES

s Access Time of 90, 120, 150ns s Packaging:

?56 Lead, Hermetic Ceramic, 0.520" CSOP (Package 213).Fits standard 56 SSOP footprint.s Sector Architecture

?32 equal size sectors of 64KBytes per each 2Mx8 chip ?Any combination of sectors can be erased. Also supports full chip erase.

s Minimum 100,000 Write/Erase Cycles Minimum

s Organized as two banks of 2Mx16; User Configurable as 4 x 2Mx8

s Commercial, Industrial, and Military Temperature Ranges s 5 Volt Read and Write. 5V ± 10% Supply.s Low Power CMOS

White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

WF4M16-XDTX5

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol Ratings Unit Voltage on Any Pin Relative to V SS V T -2.0 to +7.0

V Power Dissipation P T 8W Storage Temperature

Tstg -65 to +125°C Short Circuit Output Current I OS

100mA Endurance - Write/Erase Cycles 100,000 min

cycles (Mil Temp)

Data Retention (Mil Temp)

years

RECOMMENDED DC OPERATING CONDITIONS

Parameter Symbol Min Max Unit Supply Voltage V CC 4.5 5.5V Ground

V SS 00V Input High Voltage V IH 2.0V CC + 0.5V Input Low Voltage

V IL -0.5+0.8V Operating Temperature (Mil.)T A -55+125°C Operating Temperature (Ind.)

T A

-40

+85

°C

DC CHARACTERISTICS - CMOS COMPATIBLE

(V CC = 5.0V, V SS = 0V, T A = -55°C to +125°C)

NOTES:

1.The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than IH .

2.Icc active while Embedded Algorithm (program or erase) is in progress.

3.DC test conditions V IL = 0.3V, V IH = V CC - 0.3V

Parameter

Symbol Conditions

Min

Max Unit Input Leakage Current I LI V CC = 5.5, V IN = GND to V CC 10μA Output Leakage Current I LOx32V CC = 5.5, V IN = GND to V CC

10μA V CC Active Current for Read (1)

I CC1CS = V IL , OE = V IH , f = 5MHz, V CC = 5.582mA V CC Active Current for Program or Erase (2)I CC2CS = V IL , OE = V IH , V CC = 5.5122mA V CC Standby Current I CC3V CC = 5.5, CS = V IH , f = 5MHz 8.0mA Output Low Voltage V OL I OL = 12.0 mA, V CC = 4.50.45

V Output High Voltage V OH I OH = -2.5 mA, V CC = 4.5

0.85xVcc

V Low V CC Lock-Out Voltage

V LKO

3.2

4.2

CAPACITANCE (T A = +25°C)

Parameter Symbol Conditions Max Unit OE capacitance C OE V IN = 0 V, f = 1.0 MHz 45pF WE capacitance C WE V IN = 0 V, f = 1.0 MHz 45pF CS capacitance C CS V IN = 0 V, f = 1.0 MHz 15pF Data I/O capacitance C I/O V I/O = 0 V, f = 1.0 MHz 25pF Address input capacitance

C AD

V IN = 0 V, f = 1.0 MHz

This parameter is guaranteed by design but not tested.

3White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

WF4M16-XDTX5

AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED

(V CC = 5.0V, V SS = 0V, T A = -55°C to +125°C)

Parameter Symbol

-90

-120

-150

Unit

Min

Max

Min Max

Write Cycle Time t AVAV t WC 90120150ns Write Enable Setup Time t WLEL t WS 000ns Chip Select Pulse Width t ELEH t CP 455050ns Address Setup Time t AVEL t AS 000ns Data Setup Time t DVEH t DS 455050ns Data Hold Time t EHDX t DH 000ns Address Hold Time

t ELAX t AH 455050ns Chip Select Pulse Width High

t EHEL t CPH

ns Duration of Byte Programming Operation (1)t WHWH1300300300μs Sector Erase Time (2)t WHWH215

15sec Read Recovery Time t GHEL

μs Chip Programming Time 444444sec Chip Erase Time (3)256

256

sec Output Enable Hold Time (4)

t OEH

ns NOTES:

1. Typical value for t WHWH1 is 7μs.

2. Typical value for t WHWH2 is 1sec.

3. Typical value for Chip Erase Time is 32sec.

4. For Toggle and Data Polling.

5White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

7White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

9White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

10 White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,

11White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/d844829.html,