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IRL3202S中文资料

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V GS @ 4.5V 48I D @ T C = 100°C Continuous Drain Current, V GS @ 4.5V 30A I DM

Pulsed Drain Current 190P D @T C = 25°C Power Dissipation 69W Linear Derating Factor 0.56W/°C V GS Gate-to-Source Voltage ± 10V V GSM Gate-to-Source Voltage

14V (Start Up Transient, tp = 100μs)E AS Single Pulse Avalanche Energy 270mJ I AR Avalanche Current

29A E AR Repetitive Avalanche Energy 6.9mJ dv/dt Peak Diode Recovery dv/dt 5.0

V/ns T J Operating Junction and

-55 to + 150T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

11/18/97

IRL3202S

PRELIMINARY

HEXFET ? Power MOSFET

PD 9.1675B

These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.The D 2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Description

2D P ak

Parameter

Typ.

Max.

Units

R q JC Junction-to-Case

––– 1.8R q JA

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

°C/W

Thermal Resistance

Absolute Maximum Ratings

l Advanced Process Technology l Surface Mount

l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l

Fast Switching

IRL3202S