Features
Mechanical Data
· Silicon epitaxial planar diode · Fast switching diodes · 500mW power dissipation
· This diode is also available in the Mini-MELF case with the type designation LL4148
· Case: DO-35 glass case
· Polarity: Color band denotes cathode end · Weight: Approx. 0.13 gram
Maximum Ratings And Electrical Characteristics
Electrical characteristics
(Ratings at 25?é ambient temperature unless otherwise specified)
(Ratings at 25?é ambient temperature unless otherwise specified)
Symbol Value
Units
Average rectified current, Half wave rectification with Resistive load at T A =25?é and F??50Hz mA 1501)Surge forward current at t<1S and T J =25?é?é
-65 to +175
Storage temperature range
?éReverse Voltage
Volts 75V R I AV I FSM 500T STG
Junction temperature T J 175mA 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Peak Reverse Voltage
Volts 100V RM Power dissipation at T A =25?émW 5001)Ptot Symbols Units
Leakage current at V R =20V
at V R =75V
at V R =20V, T J =150?é
nA Junction Capacitance at V R =V F =0V
I R I R I R C J
Min.Thermal resistance, junction to Ambient Typ.Max.
25 5 5043501)
K/W
Forward voltage Volts 1V F R¥èJA
pF Reverse Recovery time from I F =10mA to I R =1mA,V R =6V, R L =100¥?
4ns trr 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Voltage rise when switching ON tested with 50mA pulse tp=0.1¥ìS, Rise time<30¥ìS, fp=5 to 100KHz Volts 2.5V fr Rectification efficiency at f=100MHz, V RF =2V
0.45
¥?
Dimensions in inches and (millimeters)
DO-34(GLASS)
¥ìA ¥ìA
FIG.1-FORWARD CHARACTERISTICS FIG.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE
1
2V
F
V F mA
1
10-1
10-2
102
103
10
I F
110101010
103
1
102
104
10
mA
100
200 ?é
T A P tot
01003002001000900800700
600500400
mW
2010V
8640.7
0.8
1.0
0.9
1.1
V R
C tot (VR)C (OV)
F
¥?
FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
100
200 ?é
nA
103
1
102
104
10
O
tp
1
10
-1
10-2
10S
10-3
10-5
10-4
0.1
1
100
10
A