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1N4148DO34中文资料

1N4148DO34中文资料
1N4148DO34中文资料

Features

Mechanical Data

· Silicon epitaxial planar diode · Fast switching diodes · 500mW power dissipation

· This diode is also available in the Mini-MELF case with the type designation LL4148

· Case: DO-35 glass case

· Polarity: Color band denotes cathode end · Weight: Approx. 0.13 gram

Maximum Ratings And Electrical Characteristics

Electrical characteristics

(Ratings at 25?é ambient temperature unless otherwise specified)

(Ratings at 25?é ambient temperature unless otherwise specified)

Symbol Value

Units

Average rectified current, Half wave rectification with Resistive load at T A =25?é and F??50Hz mA 1501)Surge forward current at t<1S and T J =25?é?é

-65 to +175

Storage temperature range

?éReverse Voltage

Volts 75V R I AV I FSM 500T STG

Junction temperature T J 175mA 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

Peak Reverse Voltage

Volts 100V RM Power dissipation at T A =25?émW 5001)Ptot Symbols Units

Leakage current at V R =20V

at V R =75V

at V R =20V, T J =150?é

nA Junction Capacitance at V R =V F =0V

I R I R I R C J

Min.Thermal resistance, junction to Ambient Typ.Max.

25 5 5043501)

K/W

Forward voltage Volts 1V F R¥èJA

pF Reverse Recovery time from I F =10mA to I R =1mA,V R =6V, R L =100¥?

4ns trr 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

Voltage rise when switching ON tested with 50mA pulse tp=0.1¥ìS, Rise time<30¥ìS, fp=5 to 100KHz Volts 2.5V fr Rectification efficiency at f=100MHz, V RF =2V

0.45

¥?

Dimensions in inches and (millimeters)

DO-34(GLASS)

¥ìA ¥ìA

FIG.1-FORWARD CHARACTERISTICS FIG.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT

FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE

FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE

1

2V

F

V F mA

1

10-1

10-2

102

103

10

I F

110101010

103

1

102

104

10

mA

100

200 ?é

T A P tot

01003002001000900800700

600500400

mW

2010V

8640.7

0.8

1.0

0.9

1.1

V R

C tot (VR)C (OV)

F

¥?

FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT

FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION

100

200 ?é

nA

103

1

102

104

10

O

tp

1

10

-1

10-2

10S

10-3

10-5

10-4

0.1

1

100

10

A

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