1SS380TE-17中文资料
Diodes Rev.A 1/2
Switching diode
DAN222
z Application
Ultra high speed switching
z Features
1) Ultra small mold type. (EMD3) 2) High reliability .
z Construction
Silicon epitaxial planar
z External dimensions (Unit : mm) z Land size figure (Unit : mm)
z
Diodes Rev.A 2/2
z Electrical characteristic curves (T a=25°C)
T :I F R R E N FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
F O R W A R D C U (m A )
R E V E R S E C U
R R E N T :I R (n A )
REVERSE VOLTAGE：VR(V)VR-IR CHARACTERISTICS
T E R M I N A L S :C t (p F )
REVERSE VOLTAGE:VR(V)VR-Ct CHARACTERISTICS
VF DISPERSION MAP F O R W A R D V O L T A G E :V F (m V )
R E V E R S E C U R R E N T :I R (n A )
IR DISPERSION MAP C A P A C I T A N C E B E T W E E N T E R M I N A L
S :C t (p F )
Ct DISPERSION MAP
IFSM DISRESION MAP
P E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )
P E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
P E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
T R A N S I E N T T H A E R M A L I M P
E D A N C E :R t h (℃/W )
trr DISPERSION MAP
R E S E R V E R E C O V E R Y T I M E :t r r (n s )
E L
E C T R O S T A T I C D D I S C H A R G E T E S T E S D (K V )
ESD DISPERSION MAP
0.1
1
10100
0100200300400500600700800900100
0.01
0.1110100
1000100000
10
203040506070
80
0.1
1
10
5101520
900
910
920930940950
1020304050607080
90
1000
5
10
15
200
12345678910012345
1
10
100
110
100
0.1
110100
110
100
1000
0.001
0.01
0.11101001000
123456789
10
123456789
10
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1