PM50100K中文资料

PM50100K

Silicon N-Channel Power MOS FET Module

November 1996 Application

High Speed Power Switching

Features

? Equipped with Power MOS FET

? Low on-resistance

? High speed switching

? Low drive current

? Wide area of safe operation

? Inherent parallel diode between source and drain

? Isolated base from Terminal

? Suitable for motor driver, switching regulator and etc.

PM50100K

2

Outline

LF-K

Equivalent Circuit

No S1 D1 S2 D2 G1 S1 G2 S2

Electrode Source 1 Drain 1 Source 2 Drain 2 Gate 1 Source 1 Gate 2 Source 2

Terminals M5 screw M5 screw M5 screw M5 screw #110 #110 #110 #110

Remarks

Power terminal

Signal terminals D2

S2

D1

G2S2

S1

G1

S1

D1

S1/D2

S2

G1S1

G2S2

Rg

Rg Absolute Maximum Ratings (Ta = 25°C) (Per FET chip)

Item

Symbol Rating Unit Drain source voltage V (BR)DSS 500V Gate source voltage V (BR)GSS ±30V Drain current I D 100A Drain peak current

I D(peak)240A Body to drain diode reverse drain current I DR 100A Body to drain diode reverse peak current I DR(peak)240A Channel dissipation Pch*1

400W Channel temperature Tch 150°C Storage temperature Tstg –45 to +125°C Insulation dielectric

Viso*

22000

Vrms

Notes 1.Value at Ta = 25°C

2.Base to terminals AC minute

PM50100K

3

Electrical Characteristics (Ta = 25°C) (Per FET chip)

Item

Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage

V (BR)DSS 500——V I D = 10 mA, V GS = 0 V Gate to source leak current I GSS ——±10μA V GS = ± 25 V, V DS = 0 V Gate to source breakdown voltage

V (BR)GSS ±30——V I G = ±100 μA, V DS = 0 V Drain leak current I DSS ——1mA V DS = 400 V, V GS = 0 V Gate to source threshold voltage

V GS(th) 2.0— 3.0V I D = 1 mA, V DS = 10 V Drain to source saturation voltage

V DS(on)

— 4.0 5.0V I D = 50 A, V GS = 10 V*1

Static drain to source on state resistance

R DS(on)—0.080.10?I D = 50 A, V GS = 10 V*1

Forward transfer admittance |y fs |—55—S I D = 50 A, V DS = 10 V*1

Input capacitance Ciss —14600—pF

V DS = 10 V, V GS = 0 V Output capacitance

Coss —3500— f = 1 MHz

Reverse transfer capacitance Crss —650—Turn-on delay time t d(on)—200—ns

I D = 50 A, V GS = 10 V Rise time

t r —690—Rg = 50 ?Turn-off delay time t d(off)—760—R L = 0.6 ?

Fall time

t f —260—Body to drain diode forward voltage

V DF — 1.6—V I F = 100 A, V GS = 0 V Body to drain diode reverse recovery time t rr

—

140

—

ns

I F = 100 A, V GS = 0 V di/dt = 100 A/μs

Note

1.Pulse Test

Mechanical Characteristics

Item

Symbol Condition

Rating Unit Fixing strength —Mounting into main-terminal with M4 screw 1.45 to 1.95N-m —Mounting into heat sink with M5 screw 1.95 to 2.9N-m Weight

—

Typical value

380

g

PM50100K

4

Power vs. Temperature Derating

C

h

a

n

n

e

l

D

i

s

s

i

p

a

t

i

o

n

P

c

h

(

W

)

050100150

Case Temperature T (°C) 600

400

200

C

Maximum Safe Operation Area

D

r

a

i

n

C

u

r

r

e

n

t

I

(

A

)

Drain to Source Voltage V (V)

DS

D

1000

100

10

1

0.1

0.01

D C

O p

e r a

t i o

n(

T

=2

5°

C)

1m

s

P W

=1

0m

s(

1s

h o

t)

10

sμ

10

sμ

O p

e r a

t i o

n i

n t

h i s

a r e

a

i s l

i m

i t e

d b

y R

(o n

)

D S

PM45100K

PM50100K

Ta = 25°C

0.11101001000

C

Typical Output Characteristecs 100

80

60

40

20

D

r

a

i

n

C

u

r

r

e

n

t

I

(

A

)

D

GS

V = 10 V

GS

V = 6 V

GS

V = 5 V

GS

V = 4.5 V

GS

V = 4 V

Pulse Test

048121620

Drain to Source Voltage V (V)

DS

Typical Transfer Characteristics

DS

V = 20 V

Pulse Test

D

r

a

i

n

C

u

r

r

e

n

t

I

(

A

)

Ta = 75°C

D

Ta = 25°C

Ta = –25°C 100

80

60

40

20

0246810

Gate to Source Voltage V (V)

GS

PM50100K

5

Pulse Test 0

246810

Gate to Source Voltage V (V)GS

Drain to Source Saturation Voltage

vs. Gate to Source Voltage D r a i n t o S o u r c e S a t u r a t i o n V o l t a g e V (V )D

S 10

8 6 4 2 I = 100 A D

50 A 20 A Static Drain to Source on State

Resistance vs. Drain Current S t a t i c D r a i n t o S o u r c e R e s i s t a n c e R (o n ) ( )D S

0.1

0.01

1

10

100

Drain Current I (A)D

V = 10,15 V Pulse Test

GS

1000

1.0

0.3

0.03

?Static Drain to Source on State Resistance vs. Temperature S t a t i c D r a i n t o S o u r c e o n S t a t e R e s i s t a n c e R (o n ) ( )D S

Pulse Test

GS

0.5 0.4 0.3 0.2 0.1 0

V = 10 V 50 A

I = 100 A D

20 A

–40

080120

Case Temperature T (°C)40C

?

PM50100K

6

Forward Transfer Admittance

vs. Drain Current

F

o

r

w

a

r

d

A

d

m

i

t

t

a

n

c

e

|

y

|

(

S

)

0.1110

0.1

10

1

Drain Current I (A)

D

V = 10 V

Pulse Test

Ta = –25°C

75°C

25°C

DS

V = 10 V

Pulse Test

DS

100 100

f

s

Body to Drain Diode Reverse

Recovery Time

R

e

v

e

r

s

e

R

e

c

o

v

e

r

y

T

i

m

e

t

(

n

s

)

Reverse Drain Current I (A)

0.1110100

300

100

30

10

DR

μ

GS

di/dt = 100 A/ s

V = 0 V

Pulse Test

r

r

1000

Typical Capacitance

vs. Drain to Source Voltage C

a

p

a

c

i

t

a

n

c

e

C

(

F

)

100000

10000

1000

100

10

0102040

Drain to Source Voltage V (V)

DS P

Ciss

Coss

Crss

V = 10 V

f = 1 MHz

GS

30

Dynamic Input Characteristics

500

400

300

200

100

D

r

a

i

n

t

o

S

o

u

r

c

e

V

o

l

t

a

g

e

V

(

V

)

080160240320400

Gate Charge Qg (nc)

G

a

t

e

t

o

S

o

u

r

c

e

V

o

l

t

a

g

e

V

(

V

) D

S

G

S

20

16

12

8

4

V = 100 V

200 V

300 V

V = 300 V

200 V

100 V

DD

DD

V

GS

DS

V

I = 50 A

Pulse Test

D

PM50100K

7

Switching Characteristics

3000S w i t c h i n g T i m e t (n s )

0.1

1

10

Drain Current I (A)D V = 10 V duty < 1%

t t t t GS

100d (off)

r

f

d (on)

1000

1001030300Reverse Drain Current vs. Source to Drain Voltage 100 80 60 40 20

R e v e r s e D r a i n C u r r e n t I (A )D R

SD

00.40.8 1.2 1.6 2.0

Source to Drain Voltage V (V)GS

GS

Pulse Test V = 0, –5 V V = 10 V Normalized Transient Thermal Impedance vs. Pulse Width

1

0.1

0.01

0.001

N o r m a l i z e d T r a n s i e n t T h e r m a l I m p e d a n c e

(t )100 μ

1 m 10 m 100 m 110

P PW

T D =T

PW

DM

γθch – C (t) = (t) · ch – C ch – C = 0.312°C/W,T = 25°C θθ

Pulse Width PW (s)

γ D = 10.50.20.1

0.050.020.011 s

h o t p u l s e

C

P.G.

Vin 10 V

50?

Vin Monitor

D.U.T

Vout Monitor

R L

V = 30 V DD ..Switching Time Test Circuit

PM50100K

8

t t t t 10 %

90 %

10 %Vin Vout

90 %

10 %90 %

f (on)

r

d (off)

f

Waveforms

Package Dimensions

Unit:mm

(18)(7)(16)(7)(18)

(2.8)

31M a x

(12)

95 Max

80 ± 0.6(23)(23)

(7)

3-M5 Screw

4- 5.5 ± 0.3(30)

62 M a x

48 ± 0.6(11)

(21)(6.5)

JAPAN

S1

D2

S2

D1

G 2

S 2S 1

G 1φ

PM50100K

9

When using this document, keep the following in mind:

1.This document may, wholly or partially, be subject to change without notice.

2.All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission.

3.Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document.

4.Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein.

5.No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd.

6.MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL

APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.

Hitachi, Ltd.

Semiconductor & IC Div.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 U S A

Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH

Electronic Components Group Continental Europe Dornacher Stra?e 3 D-85622 Feldkirchen München

Tel: 089-9 91 80-0 Fax: 089-9 29 30 00

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Lower Cookham Road Maidenhead

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