文档库 最新最全的文档下载
当前位置:文档库 › BL-Q52E-41S中文资料

BL-Q52E-41S中文资料

BL-Q52E-41S中文资料
BL-Q52E-41S中文资料

w

w

w .b

e t l u x

.c

o m BL-Q52X-41

Features:

13.20mm (0.52”) Four digit and Over numeric display series Low current operation.

Excellent character appearance.

Easy mounting on P .C. Boards or sockets. I.C. Compatible.

ROHS Compliance.

Super Bright

Electrical-optical characteristics: (Ta=25) (Test Condition: IF=20mA)

Part No

Chip

VF

Unit:V Common Cathode

Common Anode

Emitte

d Color

Material

λP (nm)

Typ Max Iv TYP.(mcd

)

BL-Q52E-41S-XX BL-Q52F-41S-XX Hi Red GaAlAs/GaAs,SH 660 1.85

2.20

115

BL-Q52E-41D-XX BL-Q52F-41D-XX Super Red GaAlAs/GaAs,DH 660 1.85

2.20

120 BL-Q52E-41UR-XX BL-Q52F-41UR-XX Ultra Red GaAlAs/GaAs,DDH

660

1.85

2.20

165 BL-Q52E-41E-XX BL-Q52F-41E-XX Orange GaAsP/GaP

635 2.10

2.50

120 BL-Q52E-41Y-XX BL-Q52F-41Y-XX Yellow GaAsP/GaP 585 2.10

2.50

120 BL-Q52E-41G-XX

BL-Q52F-41G-XX

Green

GaP/GaP 570 2.20

2.50

120

Ultra Bright

Electrical-optical characteristics: (Ta=25) (Test Condition: IF=20mA)

Part No

Chip

VF

Unit:V Common Cathode Common Anode

Emitted Color Material

λP

(nm)

Typ Max Iv TYP .(mcd

) BL-Q52E-41UHR-XX BL-Q52F-41UHR-XX

Ultra Red AlGaInP

645 2.10 2.50 165 BL-Q52E-41UE-XX

BL-Q52F-41UE-XX Ultra Orange AlGaInP 630 2.10 2.50 145 BL-Q52E-41YO-XX BL-Q52F-41YO-XX

Ultra Amber AlGaInP 619 2.10 2.50 145 BL-Q52E-41UY-XX

BL-Q52F-41UY-XX Ultra Yellow AlGaInP 590 2.10 2.50 145 BL-Q52E-41UG-XX BL-Q52F-41UG-XX Ultra Green AlGaInP

574 2.20 2.50 145 BL-Q52E-41PG-XX BL-Q52F-41PG-XX

Ultra Pure Green InGaN 525 3.80 4.50 195 BL-Q52E-41B-XX BL-Q52F-41B-XX Ultra Blue InGaN 470 2.70 4.20 125 BL-Q52E-41W-XX

BL-Q52F-41W-XX

Ultra White

InGaN

/

2.70

4.20

150

-XX: Surface / Lens color

Number

1 2 3 4 5 Ref Surface Color White Black Gray Red Green Epoxy Color Water

clear

White diffused

Red Diffused

Green Diffused

Yellow Diffused

w

w

w .b

e t l u x

.c

o m BL-Q52X-41

Absolute maximum ratings (Ta=25)

Parameter

S D UR E Y G Unit Forward Current I F 25 25

25 25 25 30 mA Power Dissipation P d 60 60 60 60 60 65 mW Reverse Voltage V R

5 5 5 5 5 5 V Peak Forward Current I PF (Duty 1/10 @1KHZ)

150

150

150 150

150

150

mA

Operation Temperature T OPR -40 to +80 Storage Temperature T STG -40 to +85

Lead Soldering Temperature T SOL

Max.260±5 for 3 sec Max. (1.6mm from the base of the epoxy bulb)

Absolute maximum ratings (Ta=25°C) Parameter

UHR

UE YO UY

UG

PG

UB

UW

Unit

Forward Current I F 30 30

30 30 30 30

30 30 mA Power Dissipation P d 75 65 65 65 75 110 120 120 mW Reverse Voltage V R

5

5

5

5

5 5

5

5

V Peak Forward Current I PF (Duty 1/10 @1KHZ)

150

150

150

150

150

150

100

100

mA Operation Temperature T OPR -40 to +80

Storage Temperature T STG

-40 to +85

Lead Soldering Temperature

T SOL

Max.260±5 for 3 sec Max. (1.6mm from the base of the epoxy bulb)

w

w

w .b

e t l u x

.c

o m BL-Q52X-41

Package configuration & Internal circuit diagram

Notes:

1. All dimensions are in millimeters (inches)

2. Tolerance is 0.25(0.01")unless otherwise noted.

3. Specifications are subject to change without notice.

w

w

u x

.c

o m BL-Q52X-41

Typical electrical-optical characteristics curves:

1.0

0.5

0350

400450500550600650700

7508008509009501000

(A)

(B)

(C)

(D)

(2)

(3)

(8)

(4)

(1)(6)

(5)

(9)

(10)

Wavelength(nm)

RELATIVE INTENSITY Vs WAVELENGTH()

p (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow

(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red

(6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red

(9) - GaAlAs 880nm

(10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue

(C) - (D) - InGaN/SiC 505nm/Ultra Green InGaAl/SiC 525nm/Ultra Green

504030201001.2

1.6

2.0 2.4 2.6

3.01

63

45

285040302010020

40

60

80

100

1

6

2,4,8,A 35

3210.50.20.1-30

-20

-10

10

2030

40

506070

1

5423

109876543211

10

100

1000

10,000

10KHz 3KHz

1KHz 300KHz 100KHz F-REFRESH RATE

100KHz 30KHz

10KHz 3KHz 1KHz 300Hz 100Hz 1098765

4321

1

10100100010,000

FORWARD VOLT AGE (Vf)FORWARD CURRENT VS.FORWARD VOLTAGE

RELATIVE LUMINOUS

INTENSITY VS. FORWARD CURRENT

AMBIENT TEMPERATURE T a()FORWARD CURRENT VS. AMBIENT TEMPERATURE

tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K)

NOTE:25 free air temperature unless otherwise specified

tp-PULSE DURATION uS

FORWARD CURRENT(mA)FORWARD CURRENT (mA)

RELATIVE LUMINOUS INTENSITY

FORWARD CURRENT(mA)

RELATIVE LUMINOUS INTENSITY

AMBIENT TEMPERATURE T a()

(5)

Ipeak MAX.IDC MAX.

Ipeak MAX.IDC MAX.

相关文档