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产品规格书MXP6008CT

N-Channel MOSFET Applications:

● Power Supply I D a ● DC-DC Converters

109A

Features:

● Lead Free

● Low R DS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized B

VDSS Capability

Ordering Information

Package Brand TO-220

MXP

Absolute Maximum Ratings

T C =25℃ unless otherwise specified

Symbol

Value

Unit

V DSS

V I D a 109I DM 436150W 1.00W/℃V GS +/-20V E AS 800mJ I AS

Figure 9A T J and T STG

-55 to 175

℃

Thermal Resistance

Symbol

Min Typ Max Unit

R θJA

Note:

a: Calculated continuous current based upon maximum allowable junction temperature +175℃. Package limitation current is 80A.1 cubic foot chanber, free air

℃/W

Junction-to-Ambient R θJC Junction-to-Case

Test Conditions

Parameter

Water cooled heatsink, P D adjusted for a peak junction Temperature of 175℃

1.00

Operating Junction and Storage Temperature Range

V DSS 60V 8m ΩPower Dissipation

P D Derating Factor above 25℃MXP6008CT Datasheet

A Pulsed Drain Current @V G =10V Pulsed Avalanche Energy

Gate-to-Source Voltage

Parameter Drain-to-Source Voltage Continuous Drain Current

Single Pulse Avalanche Energy (L=1mH, I AS =40A)

R DS(ON)(MAX)

Park Number MXP6008CT

OFF Characteristics

T J =25℃ unless otherwise specified

Symbol

Min Typ Max Unit

B VDSS 60

V 1

100100100

ON Characteristics

T J =25℃ unless otherwise specified

Symbol

Min Typ Max Unit

R DS(ON) 6.38

m ?V GS(TH)

V Dynamic Characteristics

Essentially independent of operating temperature

Symbol

Min Typ Max Unit

Ciss 3395

Coss 435Crss 150Qg 50Qgs 21Qgd 14

Td(on)14

Tr 43

Td(off)31

Tf 11

Source-Drain Diode Characteristics

T J =25℃ unless otherwise specified

Symbol

Min Typ Max Unit

V SD 1.2V trr 52

ns Qrr

4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054

Reverse Recovery Time Reverse Recovery Change

IF=38Amps,di/dt=100Amps/uS

Parameter

Test Conditions Drain-to-Source Breakdown Voltage V GS =0V, I D =250uA I GSS

Gate-to-Source Forward Leakage nA

V GS =+20V Gate-to-Source Reverse Leakage

V GS = -20V

I DSS Drain-to-Source Leakage Current uA V DS =48V, V GS =0V

V DS =48V, V GS =0V, T J =125 ℃

I S =30A, V GS =0V nS

V DD =30V, I D =38A, V G =10V,

R G =2.5?

Diode Forward Voltage Turn-in Delay Time Rise Time V GS =0V, V DS =25V, f=1.0MHz

V DD =30V, I D =38A, V GS =10V

Parameter

Test Conditions Turn-off Delay Time Fall Time pF

nC Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Threshold Voltage.

V GS =V DS , I D =250uA

Parameter Test Conditions Published by MaxPower Semiconductor Inc.

V GS =10V, I D =24A Parameter

Test Conditions Static Drain-to-Source On-Resistance

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