IXTP50N20P中文资料
? 2004 IXYS All rights reserved
G D
S
G
S
Symbol Test Conditions
Maximum Ratings
V DSS T J = 25°C to 175°C
200V V DGR T J = 25°C to 175°C; R GS = 1 M ?
200V V GSM ±20
V I D25T C = 25°C
50A I DM T C = 25°C, pulse width limited by T JM 120A I AR T C = 25°C 50A E AR T C = 25°C 30mJ E AS T C = 25°C
1.0J dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS ,10
V/ns
T J ≤ 150°C, R G = 10 ?P D T C = 25°C
360
W T J -55 ... +175
°C T JM 175
°C T stg -55 ... +125
°C T L
1.6 mm (0.062 in.) from case for 10 s 300°C Maximum tab temperature for soldering 260
°C
TO-263 package for 10s M d Mounting torque (TO-3P / TO-220)
1.13/10Nm/lb.in.
Weight
TO-3P 5.5g TO-2204g TO-263
3
g
G = Gate D = Drain S = Source
TAB = Drain
DS99156A(04/04)
Symbol Test Conditions
Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ.Max.V DSS V GS = 0 V, I D = 250 μA 200V V GS(th)V DS = V GS , I D = 250μA 2.5
5.0V I GSS V GS = ±20 V DC , V DS = 0±
100nA I
DSS V DS = V DSS 25
μA V GS = 0 V
T J = 150°C
250
μA R DS(on)
V GS = 10 V, I D = I T
50
60
m ?
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
PolarHT TM
Power MOSFET
N-Channel Enhancement Mode Features
z International standard packages
z
Unclamped Inductive Switching (UIS)rated
z
Low package inductance -easy to drive and to protect
Advantages
z Easy to mount z Space savings z
High power density
PolarHT TM DMOS transistors utilize proprietary designs and process. US patent is pending.
TO-263 (I XTA )
TO-220 (I XTP )
IXTQ 50N20P IXTA 50N20P IXTP 50N20P
V DSS = 200 V I D25
= 50 A R DS(on)
= 60 m ?
TO-3P (I XTQ )
Preliminary Data Sheet
IXYS MOSFETs and IGBTs are covered by one or more4,850,0724,931,8445,034,7965,063,3075,237,4815,381,0256,404,065B16,162,6656,534,3436,583,505 of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B16,259,123B16,306,728B16,683,344
? 2004 IXYS All rights reserved
? 2004 IXYS All rights reserved