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DG444B中文资料

Top View

S 2V+V L S 3

IN 3D 3

D 4IN 4IN

D IN S 1V ?GND S 4

Top View

IN 1IN 2D 1D 2S 1S 2V ?V+GND V L S 4S 3D 4D 3IN 4

IN 3

Dual-In-Line and SOIC

DG444B

QFN16 (4x4 mm)

Improved Quad SPST CMOS Analog Switches

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 45 W

D Low Power Consumption: 1.0 mW D Fast Switching Action—t ON : 120 ns D Low Charge Injection

TTL/CMOS Logic Compatible

D Low Signal Errors and Distortion

D Reduced Power Supply Consumption D Faster Throughput

D Reduced Pedestal Errors D

Simple Interfacing

D Audio Switching D Data Acquisition

D Sample-and-Hold Circuits D Communication Systems D Automatic Test Equipment D

Medical Instruments

DESCRIPTION

The DG444B/445B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG444B/445B are upgrades to the original DG444/445.

Combing low on-resistance (45 ?, typ.) with high speed (t ON 120 ns, typ.), the DG444B/445B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has

been minimized on the drain for use in sample-and-hold circuits.

The DG444B/445B are built using Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup.

When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

TRUTH TABLE

Logic

DG444B

DG445B

0ON OFF 1

OFF ON

Logic “0” v 0.8 V Logic “1” w 2.4 V

ORDERING INFORMATION

Temp Range

Package

Part Number

16Pin Plastic DIP DG444BDJ 16-Pin Plastic DIP

DG445BDJ 40 to 85_C

16Pin Narrow SOIC DG444BDY ?16-Pin Narrow SOIC

DG445BDY 16Pin QFN 4x4 mm DG444BDN 16-Pin QFN 4x4 mm

DG445BDN

ABSOLUTE MAXIMUM RATINGS

V+ to V ?44 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V ?25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V L (GND ?0.3 V) to (V+) + 0.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Inputs a V S , V D (V ?) ?2 V to (V+) +2 V . . . . . . . . . . . . . . . . . . . . . . . . . . .

or 30 mA, whichever occurs first

Continuous Current (Any Terminal) 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current, S or D (Pulsed 1 ms, 10% duty cycle)100 mA . . . . . . . . . . . . . . . . . . Storage Temperature ?65 to 125_C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (Package)b

16-Pin Plastic DIP c 470 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin Narrow Body SOIC d 640 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . QFN-16850 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes:

a.Signals on S X , D X , or IN X exceeding V+ or V ? will be clamped by internal

diodes. Limit forward diode current to maximum current ratings.b.All leads welded or soldered to PC Board.c.Derate 6 mW/_C above 75_C d.Derate 8 mW/_C above 75_C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS FOR DUAL SUPPLIES

Test Conditions

Unless Otherwise Specified

Limits

?40 to 85_C

Parameter

Symbol

V+ = 15 V, V ? = ?15 V V L = 5 V, V IN = 2.4 V, 0.8 V e

Temp a Min b Typ c Max b Unit

Analog Switch

Analog Signal Range d V ANALOG Full ?15

15V Drain-Source On-Resistance

r DS(on)I S = 1 mA, V D =#10 V

Room

Full 458095W

I S(off)

14 V V Room Full ?0.5?5"0.010.55Switch Off Leakage Current

I D(off)

V D = #14 V, V S = #14 V Room Full ?0.5?5"0.010.55nA Channel On Leakage Current

I D(on)

V S = V D = #14 V

Room Full

?0.5?10#0.02

0.510

Digital Control

Input Voltage Low V INL Full 0.8

Input Voltage High V INH Full 2.4V

Input Current V IN Low I INL V IN under test = 0.8 V, All Other = 2.4 V Full ?1?0.011A

Input Current V IN High

I INH

V IN under test = 2.4 V, All Other = 0.8 V

Full

0.01

1m Dynamic Characteristics

Turn-On Time t ON R Room 300Turn-Off Time t OFF L = 1 k W , C L = 35 pF V S = "10 V, See Figure 2

Room 200

ns Charge Injection e Q C L = 1 nF, V S = 0 V V gen = 0 V, R gen = 0 W

Room 1pC Off Isolation e

OIRR Room 90Crosstalk (Channel-to-Channel)d X TALK R L = 50 W , C L = 15 pF, V S = 1 V RMS

f = 100 kHz

Room 95dB

Source Off Capacitance C S(off) = 0 V f = 100 kHz Room 5Drain Off Capacitance C D(off)V S = 0 V, f = 100 kHz Room 5pF Channel On Capacitance

C D(on)

V S V D = 0 V, f = 1 MHz

Room

Power Supplies

Positive Supply Current I+Room

Full 15

Negative Supply Current I ?V IN = 0 or 5 V

Room Full ?1?5

m A

Logic Supply Current

I IN

Room Full

SPECIFICATIONS FOR UNIPOLAR SUPPLIES

Test Conditions

Unless Otherwise Specified

D Suffix

?40 to 85_C

Parameter

Symbol

V+ = 12 V, V ? = 0 V V L = 5 V, V IN = 2.4 V, 0.8 V e

Temp a Min b Typ c Max b Unit

Analog Switch

Analog Signal Range d

V ANALOG Full 0

12V Drain-Source On-Resistance d

r DS(on)

I S = 1 mA, V D

= 3 V, 8 V

Room Full

160200

Dynamic Characteristics

Turn-On Time t ON Room 120300Turn-Off Time t OFF R L = 1 k W , C L = 35 pF, V S = 8 V

See Figure 2

Room 60200

ns Charge Injection

C L = 1 nF, V gen = 6 V, R gen = 0 W

Room

Power Supplies

Positive Supply Current I+

Room Full 15

Negative Supply Current I ?V IN = 0 or 5 V

Room Full ?1?5

m A

Logic Supply Current

I IN

V L = 5.25 V, V IN = 0 or 5 V

Room Full

15Notes:

a.Room = 25_C, Full = as determined by the operating temperature suffix.

b.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d.Guaranteed by design, not subject to production test.

e.V IN = input voltage to perform proper function.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

?20?16?12

405060708090100110

1020304050?15

?10?5051015

r DS(on) vs. V D and Power Supply Voltages

V D ? Drain Voltage (V)

r vs. V and Temperature

V D ? Drain Voltage (V)

302010

60708090100r D S (o n )? D r a i n -S o u r c e O n -R e s i s t a n c e ()

W r D S (o n )? D r a i n -S o u r c e O n -R e s i s t a n c e ()

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

6810121416

0255075100125150175200225r

vs. V and Single Power Supply Voltages

V D ? Drain Voltage (V)250

?20

?15?10?505101520

Leakage Currents vs. Analog Voltage

?55

25455?15651 nA

100 pA

10 pA

?351 pA 85105125

I S

,I D ? C u r r e n t

Temperature (_C)Leakage Current vs. Temperature

r D S (o n )? D r a i n -S o u r c e O n -R e s i s t a n c e ()

W V ANALOG ? Analog Voltage (V)

?15

?10?5051015

3020100?10?20

?30Q ? C h a r g e (p C )

Q S, Q D ? Charge Injection vs. Analog Voltage

V ANALOG ? Analog Voltage (V)

O I R R (d B )

10 k

100 k

1 M

10 M

405060708090100110120 f ? Frequency (Hz)

Off Isolation vs. Frequency

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

FIGURE 1.

V IN

V+

GND

V ?

TEST CIRCUITS

Switching Time

FIGURE 3.Charge Injection

0 V

Logic Input

Switch Input

Switch Output

3 V

0 V

V S

Note:

Logic input waveform is inverted for DG445.

OFF

V O

IN X IN X Q = D V O x C L

(DG445B)

"3 V

V O

V g

TEST CIRCUITS

FIGURE 4.Crosstalk

FIGURE 5.Off Isolation

FIGURE 6.Source/Drain Capacitances

C = 1 mF tantalum in parallel with 0.01 mF ceramic

APPLICATIONS

FIGURE 7.Level Shifter

+15 V 0 V

0 V

V OUT

APPLICATIONS

V IN

GAIN 1A V = 1

GAIN 2A V = 10

GAIN 3A V = 20GAIN 4A V = 100

= 100

FIGURE 8.Precision-Weighted Resistor Programmable-Gain Amplifier

FIGURE 9.Precision Sample-and-Hold

V IN

V OUT