EE-SJ5-B;中文规格书,Datasheet资料
112
EE-SJ5-B Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SJ5-B
■Dimensions
Note:All units are in millimeters unless otherwise indicated.
■Features
?General-purpose model with a 5-mm-wide slot.?PCB mounting type.
?High resolution with a 0.5-mm-wide aperture.
■Absolute Maximum Ratings (Ta =25°C)
Note:1.Refer to the temperature rating chart if the ambient temper-ature exceeds 25°C.
2.The pulse width is 10 μs maximum with a frequency of 100Hz.
https://www.wendangku.net/doc/ee9138933.html,plete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A C
E
Terminal No. Name A Anode K Cathode C Collector E
Emitter
Dimensions Tolerance 3 mm max.
±0.33 < mm ≤ 6 ±0.3756 < mm ≤ 10 ±0.4510 < mm ≤ 18 ±0.5518 < mm ≤ 30
±0.65
Four, 0.5
Four, 0.25
Optical axis
Cross section AA
2.1 × 0.5 Aperture holes (see note)
Note: There is no difference in size
between the slot on the emitter and that on the detector.
2.54±0.2
7.2±0.2
5±0.2
15.4
9.2±0.3
Unless otherwise specified, the tolerances are as shown below.Item
Symbol Rated value Emitter
Forward current I F 50 mA
(see note 1)Pulse forward cur-rent
I FP 1 A
(see note 2)Reverse voltage
V R 4 V Detector
Collector–Emitter voltage
V CEO 30 V Emitter–Collector voltage
V ECO ---Collector current I C 20 mA Collector dissipa-tion
P C 100 mW (see note 1)Ambient tem-perature
Operating Topr –25°C to 85°C Storage
Tstg –30°C to 100°C Soldering temperature
Tsol
260°C
(see note 3)
Item
Symbol
Value
Condition
Emitter
Forward voltage V F 1.2 V typ., 1.5 V max.I F = 30 mA Reverse current
I R 0.01 μA typ., 10 μA max.V R = 4 V Peak emission wavelength
λP 940 nm typ.
I F = 20 mA
Detector
Light current I L 0.5 mA min., 14 mA max.I F = 20 mA, V CE = 10 V Dark current I D 2 nA typ., 200 nA max.V CE = 10 V, 0 l x Leakage current
I LEAK ------Collector–Emitter saturated volt-age
V CE (sat)0.1 V typ., 0.4 V max.I F = 20 mA, I L = 0.1 mA Peak spectral sensitivity wave-length
λP 850 nm typ.V CE = 10 V
Rising time tr 4 μs typ.V CC = 5 V, R L = 100 Ω, I L = 5 mA Falling time
tf
4 μs typ.
V CC = 5 V, R L = 100 Ω, I L = 5 mA
Be sure to read Precautions on page 25.
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EE-SJ5-B Photomicrosensor (Transmissive) 113
■Engineering Data
Dissipation Temperature Rating
Voltage Characteristics (Typical)
Light Current vs. Collector ?Emitter Voltage Characteristics (Typical)
Dark Current vs. Ambient Temperature Characteristics (Typical)
Distance d (mm)
Input Output
Input
Output
90 %10 %
(Center of optical axis)
Sensing Position Characteristics (Typical)
Response Time Measurement Circuit
Ambient temperature Ta (°C)C o l l e c t o r d i s s i p a t i o n P C (m W )
Forward voltage V F (V)
F o r w a r d c u r r e n t I F (m A )
F o r w a r d c u r r e n t I F (m A )
Forward current I F (mA)
L i g h t c u r r e n t I L (m A )
Collector ?Emitter voltage V CE (V)
Ambient temperature Ta (°C)Load resistance R L (k Ω)
Ta = ?30°C T a = 25°C Ta = 70°C
Ta = 25°C V CE = 10 V
I F = 40 mA I F = 30 mA I F = 20 mA I F = 10 mA
T a = 25°C
V CE = 10 V 0 l x
I F = 20 mA V CE = 5 V
V CC = 5 V Ta = 25°C
R e s p o n s e t i m e t r , t f (μs )
R e l a t i v e l i g h t c u r r e n t I L (%)
D a r k c u r r e n t I D (n A )
I F = 50 mA Ambient temperature Ta (°C)
I F P C
I F = 20 mA V CE = 10 V Ta = 25°C
R e l a t i v e l i g h t c u r r e n t I L (%)
Relative Light Current vs. Ambi-ent Temperature Characteristics (Typical)
Response Time vs. Load Resist-ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics (Typical)
L 100
80
60
40
20
0?1.5?2.0
?1.0?0.500.5
1.0
1.5
2.0
120
d
I F = 20 mA V CE = 10 V T a = 25°C
(C e n t e r o f o p t i c a l a x i s )
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分销商库存信息: OMRON
EE-SJ5-B