IPS511STRL中文资料
Features
?Over temperature protection (with auto-restart)?Short-circuit protection (current limit )?Active clamp ?E.S.D protection ?Status feedback ?Open load detection
?
Logic ground isolated from power ground
IPS511/IPS511S
Data Sheet No.PD 60155H
Description
The IPS511/IPS511S are fully protected five terminal high side switches with built in short circuit, over-tem-perature, ESD protection, inductive load capability and diagnostic feedback. The output current is con-trolled when it reaches I lim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junc-tion has cooled 7o C below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit,over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground.
Product Summary
R ds(on)135m ? (max)
V clamp 50V I Limit 5A V open load
3V
FULL Y PROTECTED HIGH SIDE POWER MOSFET SWITCH
Truth Table
Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature
In H L H L H L H L Out H L H H L
L (cycling)L
L (limiting)Dg
H L H H L L L L
IPS511/IPS511S
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (T j = 25o C unless otherwise specified).
Recommended Operating Conditions
Static Electrical Characteristics
(T = 25o C, V = 14V unless otherwise specified.)
IPS511/IPS511S
4
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Switching Electrical Characteristics
V cc = 14V, Resistive Load = 5.6?, T j = 25o C, (unless otherwise specified).
(3) Referenced to V cc
Lead Assignments
Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram
Tsd+(160
Tsd-
Out
( see Appl . Notes to evaluate power dissipation )
IPS511/IPS511S
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Figure 4 - Switching times definition (turn-off)
Figure 3 - Switching times definition (turn-on)
Turn on energy with a resistive or an
inductive load
Figure 6 - Diagnostic delay definitions
Figure 5 - Active clamp test circuit
050
100
150
5
10
15
20
25
30
35
Figure 10 - Max. I out (A) Vs Load Inductance (uH)
Figure 9 - Rds(on) (m ?) Vs I out
(A)0
50
100
15001234
5
0.1
1
10
50%
100%
150%
200%
-50
50
100
150
IPS511/IPS511S
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Figure 11a - Max load current (A) Vs Tamb (o C)
IPS511Figure 11b - Max load current (A) Vs Tamb (o C)
IPS511S
123
45
25
50
75
100
125
150
1234
5
25
50
75
100
125
150
Figure 12 - Transient Thermal Impedance (o C/W)
Vs Time (S)
Figure 13 - I lim (A) Vs T j (o C)
01
2
3
4
5
6-50
50
100
150
0.0
1
0.1
1
10
1
0200
400
600
1
2
3
Figure 14 - E on, E off (μJ) (A) Vs I out (A)
Figure 15 - E on (μJ) Vs Load Inductance (μH)
(see Fig. 3)
Figure 16 - Diag Blanking time (μS) Vs I out (A)
(resistive load - see Fig. 6)
1E +01E +01E +01E +01E +01E
+0
0255075100125
1500
1
2
3
1.00E-06
1.00E-05
1.00E-04
1.00E-03
5
10
15
20
25
30
35
Figure 17 - I cc (mA) Vs V cc (V)
IPS511/IPS511S
Case Outline 5 Lead - D2PAK (SMD220)
IPS511/IPS511S
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++ 44 (0) 20 8645 8000
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 3/27/2000
Note: For the most current drawings please refer to the IR website at:
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