IXFN44N50Q中文资料
Symbol Test Conditions Maximum Ratings
V DSS T J = 25°C to 150°C
500V V DGR T J = 25°C to 150°C; R GS = 1 M W
500
V V GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C
44N5044A 48N5048A I DM T C = 25°C, pulse width limited by T JM 44N50176A 48N50
192A I AR T C = 25°C 48A E AR T C = 25°C
60mJ E AS 2.5mJ
dv/dt I S ￡ I DM , di/dt ￡ 100 A/m s, V DD ￡ V DSS , 5 V/ns
T J ￡ 150°C, R G = 2 W P D T C = 25°C
500
W
T J -55 to +150°C T JM 150°C T stg -55 to +150
°C V ISOL 50/60 Hz, RMS t = 1 min 2500V~I ISOL ￡ 1 mA
t = 1 s
3000V~M d Mounting torque
1.5/13Nm/lb.in.Terminal connection torque
1.5/13
Nm/lb.in.
Weight 30
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q g , High dv/dt
Symbol
Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.typ.max.
V DSS V GS = 0 V, I D = 1 mA 500V V GS(th)V DS = V GS , I D = 4 mA 2.0
4.0V I GSS V GS = ±20 V DC , V DS = 0±100
nA I DSS V DS = V DSS T J = 25°C
100m A V GS = 0 V
T J = 125°C
2mA R DS(on)
V GS = 10 V, I D = 0.5 I D25
44N50120m W 48N50
100
m W
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
HiPerFET TM
Power MOSFETs Q-Class
S
G
S
D
miniBLOC, SOT-227 B (IXFN) E153432
Features
?IXYS advanced low Q g process ?Low gate charge and capacitances - easier to drive - faster switching
?Unclamped Inductive Switching (UIS)rated
?Low R DS (on)
?Fast intrinsic diode
?International standard package ?miniBLOC with Aluminium nitride isolation for low thermal resistance ?Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)?Molding epoxies meet UL 94 V-0flammability classification
Applications
?DC-DC converters ?Battery chargers
?Switched-mode and resonant-mode power supplies ?DC choppers
?Temperature and lighting controls Advantages ?Easy to mount ?Space savings ?High power density
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
V DSS
I D25R DS(on)
IXFN 44N50Q 500 V 44 A 120 m W IXFN 48N50Q
500 V 48 A 100 m W
t rr ￡ 250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
98715 (03/30/00)
Symbol
Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.typ.max.
g fs V DS = 20 V; I D = 0.5 ? I D25, pulse test
30
45S C iss 6400
pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz
930pF C rss 220pF t d(on)33
ns t r V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D2522ns t d(off)R G = 4.7 W (External),
75ns t f 10ns Q g(on)190
nC Q gs V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
40nC Q gd 86
nC R thJC 0.26K/W R thCK
0.05
K/W
Source-Drain Diode Characteristic Values
(T J = 25°C, unless otherwise specified)
Symbol Test Conditions min.typ.max.
I S V GS = 0 V
48A I SM Repetitive; pulse width limited by T JM 192A V SD I F = I S , V GS = 0 V,
1.5V Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %t rr 250
ns Q RM I F = I S , -di/dt = 100 A/m s, V R = 100 V
1.4m C I RM
10
A