H5N5006FM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1114-0200
(Previous: ADE-208-1112)
Rev.2.00
Sep 07, 2005 Features
? Low on-resistance: R DS (on) = 2.5 ? typ.
? Low leakage current: I DSS = 1 μA max (at V DS = 500 V)
? High speed switching: t f = 15 ns typ (at V GS = 10 V, V DD = 250 V, I D = 1.5 A)
? Low gate charge: Qg = 14 nC typ (at V DD = 400 V, V GS = 10 V, I D = 3 A)
? Avalanche ratings
Outline
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage V DSS 500 V Gate to source voltage V GSS ±30 V Drain current
I D 3 A Drain peak current
I D (pulse) Note 1
12 A
Body-drain diode reverse drain current I DR 3 A Body-drain diode reverse drain peak current I DR (pulse) Note 1 12
A
Avalanche current
I AP Note 3 3
A
Channel dissipation
Pch Note 2 25 W Channel to case thermal Impedance θ ch-c 5.0 °C/W Channel temperature Tch 150 °C Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 500 — — V I D = 10 mA, V GS = 0 Gate to source leak current I GSS — — ±0.1 μA V GS = ±30 V, V DS = 0 Zero gate voltage drain current
I DSS — — 1 μA V DS = 500 V, V GS = 0 Gate to source cutoff voltage
V GS (off) 3.0 — 4.5 V V DS = 10 V, I D = 1 mA
Static drain to source on state resistance R DS (on) — 2.5 3.0 ? I D = 1.5 A, V GS = 10 V Note 4
Forward transfer admittance |y fs | 1.5 2.5 — S I D = 1.5 A, V DS = 10 V Note 4
Input capacitance Ciss — 365 — pF Output capacitance
Coss — 35 — pF Reverse transfer capacitance Crss — 8 — pF V DS = 25 V V GS = 0 f = 1 MHz Turn-on delay time t d (on) — 20 — ns Rise time
t r — 12 — ns
Turn-off delay time t d (off) — 48 — ns
Fall time
t f — 15 — ns I D = 1.5 A
V GS = 10 V R L = 167 ? Rg = 10 ? Total gate charge
Qg
— 14 — nC Gate to source charge
Qgs
—
2
—
nC
Gate to drain charge
Qgd — 8 — nC V DD = 400 V V GS = 10 V I D = 3 A
Body-drain diode forward voltage V DF — 0.85 1.3 V I F = 3 A, V GS = 0 Body-drain diode reverse recovery time t rr — 270 — ns Body-drain diode reverse recovery charge Q rr — 0.8 — μC I F = 3 A, V GS = 0 di F /dt = 100 A/μs
Note: 4. Pulse test
Main Characteristics
Package Dimensions
Ordering Information
Part Name Quantity Shipping Container
H5N5006FM-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
https://www.wendangku.net/doc/fb6431806.html, RENESAS SALES OFFICES
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