An overview of flash architectural developments

An Overview of Flash Architectural Developments

GIOV ANNI CAMPARDO,MEMBER,IEEE,MARCO SCOTTI,SALV ATRICE SCOMMEGNA, SEBASTIANO POLLARA,AND ANDREA SILV AGNI

Invited Paper

This paper presents a survey of the principal architectures and blocks building up a Flash memory,describing how these blocks are designed and how their design has changed over the years to satisfy the new specification requests.For example,the continuous supply voltage reduction aimed at portable electronic solutions has forced designers to find innovative design solutions.An overview of the test modes developed for the Flash device not only to debug the chip but also to try to improve reliability is given.Ad hoc test modes are useful to deeply increase the analysis capability.Finally, the test methodology for Flash memories,a challenge between the test time reduction and better test coverage,is presented. Keywords—Access time,automatic test equipment(ATE),boost, charge pump,chip-scaled package(CSP),decoders,dual in-line (DIL),direct memory access(DMA),drain stress,electrical stress, erasable programmable ROM(EPROM),electrical wafer sort (EWS),finite-state machine(FSM),Flash memory,Fourier trans-form,gate stress,matrix organization,one-time programmable (OTP),reference,sector,test modes,triple well,unerasable programmable ROM(UPROM),voltage regulator.

I.I NTRODUCTION

In the first part of this paper,we will analyze the various Flash device architectural choices in regard to the spec-ifications requirements.We will also show the evolution of the architectural and circuital solutions with emphasis on the blocks organization.We will proceed in a“reverted hierarchic way”where,from the memory designer point of view,the starting point is the matrix(which occupies most of the chip area),and the end point is the I/O circuitry,passing through row and column decoding,sense amplifiers,cir-cuitry for the read program,and erase and control logic.We will then explore the test modes used to test,characterize, and debug the device.Finally,a survey of the testing of Flash Manuscript received July1,2002;revised January5,2003.

The authors are with the Memory Product Group—Flash Division, STMicroelectronics,20041Agrate Brianza,Italy(e-mail:giovanni. campardo@https://www.wendangku.net/doc/fe8411498.html,;marco.scotti@https://www.wendangku.net/doc/fe8411498.html,;salvatrice.scommegna@https://www.wendangku.net/doc/fe8411498.html,; sebastiano.pollara@https://www.wendangku.net/doc/fe8411498.html,;andrea.silvagni@https://www.wendangku.net/doc/fe8411498.html,).

Digital Object Identifier10.1109/JPROC.2003.811705memory devices through these developments will be given. So we start this journey in time and space,deciding first of all the shape of the matrix and the sectors’organization[1]. II.F LASH M EMORY M ATRIX O RGANIZATION

Flash memory was born as an evolution of erasable pro-grammable ROM(EPROM)memories,adding to them the built-in erase capability.The design of the Flash memory array is more complex compared with that of an EPROM. This is mainly due to the following aspects:first,the obvious fact that the Flash cell is electrically erased;second,the pro-cedures of program,erase,and verifying are performed in-ternally.The EPROM matrix structure was devised focusing essentially on the access time that puts the constraint on row and column length.This is the reason that justifies split-ting the matrix into different arrays with shorter rows and columns,by multiplying row and column decoders when de-signing devices with larger capacity,as shown in Fig.1.For Flash memories,this concept is also valid,and matrix struc-ture is usually designed using simple high-level guidelines.

1)Matrix organization must have the best aspect ratio and

size,to optimize the number of devices on the wafer

(we call this number gross on wafer).

2)The impact of array organization on memory access

time must be minimized.

3)Access time is,together with power consumption,the

most important parameter for a memory;it is usually

in the range of50–100ns for Flash memories. Since access time is always the principal parameter that defines the quality of the device,the first operation done by a good memory designer is the analysis of the row delay.We know that cells are organized in array;metal is used to con-nect the drain of the cells on the same column(called the bit-line),and a polysilicon line(called the wordline)connects the cells on the same row.The same polysilicon line also builds up the control gate when it crosses the active area diffusion

0018-9219/03$17.00?2003IEEE

PROCEEDINGS OF THE IEEE,VOL.91,NO.4,APRIL2003523

Fig.1.Array and decoder architecture from64k to1M.

(a)Matrix is composed by one array only.(b)To maintain fixed

row length,the array is split into two matrices.The eight outputs

are divided.(c)To have the same access time,column length is increased.(d)Total array is split into four matrices,doubling the

columns decoder and using a multiplexer to choose the data output.

Fig.2.Wordline delay.(a)Wordline schematic showing cell

connections.(b)Wordline section.(c)Wordline capacitive model.

(We call this poly2;poly1is the floating gate polysilicon ma-terial).Fig.2shows a section of a part of a row.In a first approximation,we can consider the coupling like a plane ca-pacitor,so,taking the values of the oxide’s thickness from the technological process manual,we can calculate the ca-pacitance of the cell seen from the control gate,and,taking the value of the polysilicon resistance,we can calculate the

row delay time

Fig.3.Sectors organized in columns;three sectors with different dimension.Each sector has a separated ground that can be switched to GND during read or to VPP during an erase

operation.

Fig.4.Concentrated sectors organization;outputs are replicated for each sector.Column and row decoders are in opposite direction compared with the organization showed in Fig.3.

this capacitor is discharged too quickly,the capacitive cou-pling with the cell gate could drag the junctions of the row decoder drivers below the ground voltage,potentially trig-gering latchup phenomena.The source node must initially be discharged slowly to reach a safety value,and then it is possible to increase the discharge speed.Band-to-band cur-

rent

is always present for the high potential between the source at 12V and the substrate node at ground.

The

order of magnitude is 2–5nA/cell,meaning 2–5mA for 1Mb.It is interesting to highlight that,as memory di-mensions increase and technology scales

down,

does not decrease;in fact,the tunnel oxide thickness is not scaled due to reliability constraints,and the electric field necessary to erase therefore remains the same.

The demands of the market and the scaling of technology require voltage scaling.The single-voltage Flash generation had a single

5-V

),considering the limited current capability of the charge https://www.wendangku.net/doc/fe8411498.html,ing a local column decoder,single sectors are isolated one from the other,giving a zero stress outside the sector.Erase is obtained,on the single sector,with the negative voltage on the gate,the related source at positive voltage,and the drain floating.This approach forced de-signers to give up the vertical sector organization,as we will see.An important point was the market request to increase the number of the sectors and decrease,of course,the size of them;this requirement aggravated the stress problem.B.Zero Stress Outside the Sector:Negative Gate Erase

The number of cycles,the requested number of write and erase that it is possible to perform on a sector,rose in a few years to 10

Fig.5.NOR array organization;cells on the same column share

the drain connection,while cells on the same row have the gate

terminal in common.

from the other on the drain side.This was done using a hierar-chical column decoder(see Fig.6)[16].All different sectors are isolated one from the other,and no stresses are induced to the cells of a sector not in use.

Even if erase is performed with a negative voltage on the gate instead of a positive voltage on the source of the cells,a positive voltage is always required on the source to achieve the electric field across the tunnel oxide necessary to erase. Therefore,a source line(used to bias a sector at a positive voltage during erase)is dedicated for each https://www.wendangku.net/doc/fe8411498.html,ing the negative gate erase approach raises the problem of biasing the gate of the cell,the row of the array,with a negative voltage.Without a triple well,it is not possible to apply a negative voltage on an nMOS junction transistor.The first single-voltage Flash devices solved this problem by modi-fying the structure of the row driver in the row decoder,with a positive-channel MOS transistor decoupling the row voltage from the nMOS junction.The drawback to this solution is the increased complexity of the decoding and access time[17].

C.Triple Well Technology-Aided Matrix Organized by Sector

Market requests always go in the direction of increasing memory size and the number of erase/write cycles,and de-creasing sector size.The solution suitable for these condi-tions is to divide the memory array using the hierarchical row and column decoders to obtain sectors.The same“hi-

erarchical”idea can also be used for the source,

Fig.8.Hierarchical row and column sector organization.

wordlines by 1024local bitlines and column redundancy.Each sector is built on an isolated p-well (ip well),which is included in a separate n-well region.This allows independent substrate biasing for each sector,which is vital to guarantee zero stress outside the sector.A two-level hierarchical organ-ization is used for both row and column decoding;thus,main (i.e.,global)and local (i.e.,sector)interconnections are pro-vided in both the horizontal and the vertical direction.A total of 1024main wordlines are driven by the main (or global)de-coder,which is placed on one side of the memory array.Main wordlines are in metal2.Local decoding drives local word-lines,implemented in poly2.Each main wordline can be con-nected to one of four local wordlines of the selected sector through the respective local row decoder.The local row de-coder is an optimized three-transistor design,which allows forcing any local wordline to positive,negative,or ground,thus avoiding floating conditions.

A similar approach is adopted for column decoding.The local bitline decoding,which connects one out of four local metal1bitlines to the respective metal3main bitline,is also split into two parts,placed above and below the corresponding sector.In this case,the local decoder is made up of only one negative-channel transistor,as nonaddressed bitlines are left floating (see Fig.8).

IV .R EAD M ODE AT L OW V OLTAGE U SING B OOST

To have good reliability during read mode,especially when the memory is subjected to apparent write-erase cycling,it is important to put some constraints on the cell’s threshold voltage

(

distribution must not be too high

to compromise read at low voltage supply and not too low (near negative value)to avoid spurious effects on the column selected cell,such as current offset due not only to depleted cells but also to a subthreshold contribution.To quantify,we could say that the best situation could be to have the threshold distribution placed between 0.5and 2.5V at the end of the erase.

Read problems increase when using a low voltage supply.Early Flash devices used to read by

placing

.As the supply voltages de-crease,all the cells do not sink current,and we cannot per-form a correct current to voltage conversion.To overcome such a problem,the row boost technique was used,providing to the gate (the row)a voltage greater than the external supply [21]–[24].There exists two types of boost implementation:continuous boost and one-shot boost.

1)Continuous boost architecture is shown in Fig.9:during read mode the boost circuitry,using a pump driven by the clock CK,raises the voltage output node Cload,eventually regulated to the read value through a feedback circuit (V oltage Regulator)that use a voltage reference signal (typically a band gap,VBG,is used).The principal advantage of this type of solution is that the boost capacitance is not big because the over voltage is obtained by charging the output in steps every clock transition.The drawback of this solution is that the charging to the read voltage cannot be done at the same time a read access is required but must be already done.This kind of architecture need to use a second boost circuit (auxiliary boost),smaller than the previous one,to maintain charge on the Cload capacitor during the low power standby phase,by replacing junction leakage current.

2)The second type of implementation,called one-shot boost,needs a bigger capacitance to boost,with only one shot Cload to the right value.This solution solves the standby current consumption problem and allows

CAMPARDO et al.:AN OVERVIEW OF FLASH ARCHITECTURAL DEVELOPMENTS

527

Fig.11.Typical EPROM reference architecture.

the access time specification to be meet.The one-shot

boost simplified architecture is shown in Fig.10.The

START signal is synchronized with the address tran-

sition.A simple estimation of the boost capacitance,

in a one-shot solution,could be done supposing that

Cload is roughly100pF and we want to boost BN node

from2.5to3.5V.If we have for the thickness oxide

250?,boost capacitance area will be estimated at0.16

10cm

https://www.wendangku.net/doc/fe8411498.html,plete Flash memory block diagram showing high-voltage management and control logic.

operation of an embedded controller called a write-state ma-chine(WSM)realized by a PLA-or ROM-based microcon-troller.A clock generator is made active,and the internal controller(WSM)takes over the control and performs the write or erase flow that is composed by elementary opera-tions such as short program or erase pulses and verify phases that consists of reading of the memory to check the status of the Flash cells.The controller therefore has complete control on the activation of the already described circuits for voltage generations and also on sense amplifiers.In case of erase or program,it is also necessary to control an address counter that allows changing the address on which the elementary operations are performed.Programming pulse duration and various phases are timed by using counters and registers also managed by the controller[34].

VII.T EST M ODES FOR F LASH M EMORIES

A.Introduction

Besides the modes allowed by the user,there are test modes that allow designers and product engineers to access the matrix and the circuitry in a detailed way,in order to ana-lyze the behavior of the device during its operations.No one except the factory knows the activation code of test modes, often based on an appropriate combination of address,data and third levels(e.g.,a high-voltage state greater than the power supply that can be recognized if applied to specific pins).Test modes are used with different aims;the most important of these are to guarantee performance,quality, and reliability of a Flash product.Test modes are also used to facilitate design characterization and debugging of the product.In more detail,test modes are useful to enable direct access to the matrix focusing on cell and technology, to guarantee test coverage of the logic and analog circuitry, to minimize test time for productivity reasons,to manage the redundancy circuitry and redundancy activation,and to improve yield.In the next paragraphs,we make a short survey on the main test modes,without focusing on their use,while in the successive paragraphs some key tests are discussed.B.A Survey on Main Test Modes

The first test modes used when testing a memory are related to unerasable programmable ROM(UPROM),non-volatile registers used to store redundancy and configuration information that,can be erased only in test mode.Also,the redundancy and configuration information can be inhibited to permit the analysis of the normal path separate from the redundant one.All this is valid both for the UPROM used for redundancy and for those used as configuration registers. The redundancy rows/columns can be made accessible even if not substituted to test them before their activation just like normal array cells.The references matrix is completely accessible in order to take the reference cells to the desired threshold value.The cells are addressable,programmable, and we can verify them independently,while their erasure, in general,is in common.For uniformity,we use the same erase mode for the matrix cells,as for the UPROM cells and for the minimatrix reference cells.

Other useful test modes allow external voltages from testing equipment to be applied internally and used instead of the internally generated voltages.For instance,it is pos-sible to force the gate and drain voltage of the cells during erase,program,and read operations to test the behavior of the matrix independently from the charge pumps and internal regulators.The negative voltage used during erase, normally generated inside by internal circuits,can be forced by external equipment,too.During electrical wafer sort (EWS),it is useful to program simple data patterns;for example,all0or checkerboard

(i.e.,

Table1

Values of V oltages and Time of Gate and Drain Stress in EWS

allows connecting the drain of the cell through the column decoder to the output pads,bypassing the sense amplifier and the output buffer.During this test,the sense amplifier cir-cuitry is disabled and the output buffer in in tristate;the test equipment forces about1V on the output pad(same voltage biasing forced by sense amplifiers during read mode).In this way,by measuring the cell current,it is possible to calculate the cell threshold and its gain.The cell’s characteristics can be obtained by using further test modes that allow to change step by step the wordline voltage and so the gate voltage through an external pad;in this way,varying the gate and measuring the cell’s current in DMA,it is possible to draw the cell’s characteristic.To calculate the gain,it is enough to perform two DMA measurements at two different values of gate voltage.All the cells in the device—the matrix cells,the redundancy ones,the reference matrix ones,and the UPROM ones—permit a DMA path that takes their drain to the output pads in order to measure their characteristics.

D.Fast DMA

The main limitation of the previous test is in the intrinsic slowness of the testers’parametric units,many milliseconds, and that greatly limits the ability of the test on a matrix com-posed of a few million cells to calculate the cells’distribu-tions.So a useful test to perform quickly is the fast DMA, which allows a fast cell

Fig.13.Gate stress test mode.

Table 2

Bias V oltages in Read,Program,Erase of Different Flash Memory

Generation

allows the fastest erase operation during the testing phases,but a careful design must be adopted due to the higher current requested by the multisector operation.Test modes to use external generators to overcome the internal pumps’limitations will be mandatory.

Regarding the program operation,it is possible to per-form the parallel programming that allows one to program more bytes/words/double words at the same time so as to make the write operation faster.The limitation of parallel programming is in the magnitude of the total current required to program in parallel all the cells,mainly when the drain voltage must be provided by the internal charge pump.In ad-dition,specific testability features are required to fast check all the bytes/words/double words in parallel after program-ming.An example of multisector addressing is reported in Fig.14,where it is possible to enable (disable)

all

to1

and

to0)[35]–[40].

IX.T ESTING A PPROACH A.Objective

The aim of the testing is to locate any weak behavior of a chip and to repair it if possible,or otherwise to reject

it.

Fig.14.

Multisector addressing.

On Flash memories,the test flow typically requires one or more runs at wafer level (EWS)and one or more runs on the chip after it has been put in its final package (Final Test);Flash flexibility allows one to compensate for a process drift or the presence of local defects by programming some re-served cells.Some of these cells control internal algorithm

CAMPARDO et al.:AN OVERVIEW OF FLASH ARCHITECTURAL DEVELOPMENTS

531

parameters,while others replace memory array faults with available spare elements(redundancy).

B.Device

The time when Flash memory program and erase had to be directly controlled by the user is past.Now each Flash chip includes a microcontroller that manages these and other algorithms that have been added along with the increased complexity of these memories.Internally the device needs multiple voltages to accomplish basic oper-ations,and while in the past these voltages were supplied by the external circuitry,now charge pumps have been integrated into the device.Also,package changes reflect the general evolution of Flash devices;the chip-scaled package (CSP)has replaced obsolete dual in-line(DIL).Several of these modifications have been made necessary by evolution toward low dimension/low power consumption of typical Flash applications.Flash components,in fact,are basic components of portable battery-powered systems(hence the request for single-voltage,low power consumption and virtually zero standby consumption).A radical access-time improvement has been accomplished by the introduction of burst mode.The concept underneath is simple:a group of words is read in parallel and the content of each word is serially transferred to output-buffers,while another group of words is read.The drawback of this mode is the loss of RAM.Market requests for mass-storage memories led designers to develop devices capable of storing more bits into the same Flash cell.This new strategy allows an improvement of the memory-size/chip-area ratio,a measure used to evaluate integrated memory efficiency.

C.Testing

As already mentioned,each device is tested one or more times,either at wafer level or after having been assembled in its final package,or both.The aims of these tests are to locate failures and to reject devices presenting failures that cannot be repaired.Normally,the first tests to be executed are the most coarse,and the latter are the more precise.Recently, higher parallelism has been used and has lessened the need to follow this rule.In fact,when testing a single device,it is necessary to complete the testing of one die before starting the testing of the next one,rejecting the bad one as soon as possible;however,on parallel testing,each device,among those tested in parallel,remains connected to the tester until the best die is binned out,where the best die is likely a good one.To improve the quality of the silicon produced,data ac-quisition during testing is of key importance. Unfortunately,as a rule of thumb,every test added to the production flow with the aim to monitor the quality of manufacturing worsens the test and lowers throughput.It is necessary to carefully balance productivity and visibility of the process with relevant deviations.If data collection is accurate,it is possible to get process-related problems in their early phase and to plan countermeasures.By its nature, the production cycle is rather long,and lack of attention to early clues can cause lots of unusable silicon to be generated.Among the methods used to monitor the process parameters, histograms of electrical measurements are a valuable tool,as well as rejection class frequency sorted histograms(pareto chart),wafer maps,and bitmaps.A bitmap is a snapshot of the memory array and its failures.It can be collected after any test and makes it easier to locate failures due to silicon microdefectivity and decode circuitry problems.

On recent Flash devices,some nonvolatile elements, one-time programmable(OTP)cells,have been added to make it possible to store some information that is useful to the final user(anticloning measures)and to standard programming tools.The manufacturer,as well,takes ad-vantage of this opportunity by storing on an OTP cell of each device to be rejected a unique code associated with its specific failure mode,and thus reducing dramatically the time required for the failure analysis on production rejects.

D.Electrical Wafer Sort

Normally two test flows are executed at wafer level. The second flow is needed to check charge retention on the floating gate of each Flash cell.To do that,wafers with programmed cells are baked before running a second EWS;if temperature and baking time are properly chosen, it is possible to guarantee at least ten years data retention, according to specs requirements.

The testing flow starts by checking for parametric failures (shorts between pins,open pins,abnormal power consump-tion of the chip).Then the reference cells,dedicated Flash cells accessible in test mode only,are set.Their thresholds are finely tuned to the desired values,as they will supply the reference values when reading any array cell or when veri-fying a cell state after another of the basic operations(pro-gram or erase).Using Flash cells instead of fixed voltage/cur-rent values allows partial compensation of process drifts,as such drifts equally affect array and reference cells.

Test modes are widely used in conjuction with the EWS test.A test mode enables modes hidden to the customer;these modes are,in fact,for internal use only or can even be poten-tially destructive for the device functionality.One of the first steps done at EWS is the configuration content addressable memory(CAM)programming operation.Depending on the value programmed in these cells,some options of the device can be enabled or suppressed.The array of cells,in a well-de-signed Flash memory,occupies most of the dice area;further-more,it is the part in which design rules are most stressed. Thus,it is most likely that failures,if present,will be fre-quently found in the array.This explains why designers add some spare elements to the array as replacements for failures detected during the testing phase.This explains as well why so much care is put into testing the array,and why failures in the rest of the circuitry must simply be rejected after being detected.

At the end of the productive flow,before being tested, every wafer is erased by means of a UV lamp,and the ef-fect of this operation is to bring all Flash cell thresholds to an equilibrium state.The testing flow first verifies these equi-librium values for all the cells of the array.Besides detecting all cells whose thresholds are outside of the permitted range,

532PROCEEDINGS OF THE IEEE,VOL.91,NO.4,APRIL2003

this test also locates cells whose drain current is zero regard-

less of the gate voltage(missing drain contacts and shorts

between close rows).Another phase verifies the capability

of each cell to be programmed,and uses patterns puposely

designed to help locating either badly programmed cells or

decoding problems,which can cause some cells to be pro-

grammed without having been expressly selected.This ca-

pability,common to many tests,of detecting several prob-

lems with a single test is an advantage in some aspects and

a drawback in others.If each test is able to detect a specific

problem,there would be no ambiguous interpretation,and

the corrective action could be better addressed.On the other

hand,detecting multiple problems with a single test reduces

test time,the cost of which can be the highest cost of the

whole production flow.After having verified the entire array

for programmability,completing the EPROM phase,every

bad element is replaced with a spare one if available.So all

cells that have no drain current,which makes such cells al-

ways appear programmed,will have been replaced by this

point.

At the end of the whole flow,a second redundancy step

is included to replace failures that occur in the post-EPROM

phase only.At this point,erasability can be verified on each

sector,rejecting bits that are too fast or too slow.In a NOR

architecture,in fact,bits that erase too fast start influencing

the reading of cells sharing the same bitline as soon as they

become depleted(negative

40C in automotive applications;

0C in consumer applications,etc.).Assuming every

device’s electrical characteristic to be monotonic with tem-

perature,by verifying functionality at the extreme temper-

atures,we could conclude that the devices are good in the

whole range.This assumption is a rough simplification,but

adding an adequate safety margin to characterization results

can yield results that are sufficiently accurate.At the cost of

enlarging the safety margins,we could even use two inter-

mediate temperatures inside the temperature range.It makes

sense to use room temperature and one extreme.Since high

temperature is easier to achieve than low temperature,high

temperature is usually the preferred extreme.Low temper-

ature,in fact,creates several problems for the test environ-

ment,and may require an atmosphere of inert gas and iso-

lation chambers,thus increasing the cost and complexity of

the test area.Incidentally,to use characterization results cor-

rected by safety margins often recurs on Flash testing.

Let us take as an example electrical erasing:time required

to accomplish this operation increases when reiterated(cy-

cling)due to known aging phenomena.Cycling performed

on a meaningful sample of devices allows understanding the

maximum erase time to be set backward at testing phase.

Conceptually,we take the DUT with highest aging rate,

among the ones reaching erase time limits after having

accomplished100cycles(or whatever reported in specs).

Such DUT erase time at beginning of cycling,corrected by

a proper safety margin,will be the limit to be set at testing.

This margin can be worked out by statistical considerations

on acquired data.

CAMPARDO et al.:AN OVERVIEW OF FLASH ARCHITECTURAL DEVELOPMENTS533

In modern Flash,a state machine is managing every ac-tion executed by the DUT.This machine assumes that every cell works correctly;otherwise,an error message is issued after having reached maximum number of trials admitted, and the operation is halted.During EWS,the complete ab-sence of abnormal cells cannot be guaranteed before having implemented redundancy.Before that,it is required to by-pass the state machine at least partially,so as not to encounter any error condition.As a consequence,correct functionality verification of the state machine must be postponed after re-dundancy activation.For this reason,most user modes on Flash are verified at final test.If during EWS,we verify de-vice“physics,”that is,NV cell capability to be programmed and erased,also using modes unavailable to the final user (test modes),during the final test we want to be sure that the whole system is properly working,including the state https://www.wendangku.net/doc/fe8411498.html,ing all features offered by the state machine,which is operating in user mode,greatly simplifies Flash testability. In this case,the tester simply needs to pass code sequences to the DUTs and periodically read back the status register to monitor the result of the operation.High parallelism,typ-ical of the final test phase,derives mainly from an easier in-terface with the DUT.The probe card,that is,the interface board used to contact dice at the wafer level,must be able to contact every pad of every chip tested in parallel,sharing the contact mechanical pressure with a high degree of pre-cision,not to mention other problems due to oxidation that require the probe tips to be periodically cleaned;otherwise, there is a risk of open failure.Interfacing leads of the assem-bled parts is much less critical.Moreover,DUT positioning on the load board of a final test interface is not constrained by chip position inside the wafer as it happens for the EWS.This higher freedom in positioning makes the wire routing in the board simpler,reducing the number of layers needed and di-minishing either cost and parasitic parameters.Finally,high temperature is easier to handle at final test;in fact,DUTs can be preheated in a special chamber before being tested without any of the alignment problems possible at wafer sort. Execution time of every user mode is in first approximation independent from the tester used;that explains why it is al-ways convenient to run this kind of test during the phase in which the parallelism is highest,that is,in fact,final test.In principle,each test run should add a bit of visibility on the way the DUT it is working,so a test repetition in exactly the same condition of a test already performed should be avoided along the overall test flow.Data acquired in every production phase concur to enhance the model of each component of the chip and consequently to increase the selectivity of each test.

F.Testers

Nowadays most the testers produced by automatic test equipment(ATE)industry specifically used on Flash pro-duction include the following common blocks.

1)PS Power Supply:Controlled programmable voltage

generator.2)PMU Precision Measurement Unit:Meter used to

force a voltage

(

or

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cells,”presented at the12th Bi-annual Conf.Insulating Films Semi-conductors,Udine,Italy,2001.

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memory with multi-bit cells,”Microelectron.Eng.,vol.59,no.1-4, pp.173–181,Nov.2001.

[4] B.Prince,Semiconductor Memories.A Handbook of Design Manu-

facture and Application.New York:Wiley,1993.

[5]S.T.Wang,“On the I-V characteristics of floating-gate Mos tran-

sistors,”IEEE Trans.Electron Devices,vol.ED-26,pp.1294–1296, Sept.1979.

[6]T.Jnbo et al.,“A5-V-only16-Mb Flash memory with sector erase

mode,”IEEE J.Solid-State Circuits,vol.27,pp.1547–1554,Nov.

1992.

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gate Flash EEPROM,”in IEEE Int.Electron Devices Meeting Tech.

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thermally grown Sio

3V50MHz64Mb4-level cell NOR type Flash memory,”in IEEE Int.Solid-State Circuits Conf.

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[19],“40-mm

Marco Scotti was born in Milan,Italy,in1971.

He received the Laurea degree in engineering

from the Politecnico di Milano,Milan,Italy,in

1997.

He joined STMicroelectronics,Milan,Italy,

in1998as a Circuit Designer with the Flash

Memory Design Team for multilevel64-Mb

Flash memory.He has recently worked with

multilevel128-Mb Flash memory,and his

work has been mainly concerned with design

testability

issues.

Salvatrice Scommegna was born in Vimercate,

Italy,in1973.She received the high school

diploma in electronics in1992.

In1993,she joined STMicroelecronics,

Milan,Italy,as a Product Engineer in the Flash

Memory Division.Her first project was a256-Kb

Flash;she is currently working on64-Mbit

and128-Mbit.She has recently moved to the

Multilevel Flash Design

Group.

Sebastiano Pollara was born in Lentini,Italy,

in1969.He received the Laurea degree in

electronic engineering from the University of

Catania,Catania,Italy,in1998.

From1999to2001,he was a Product Engineer

in the Flash Memory Division,STMicroelec-

tronics,Milan,Italy,involved in the testing of

64-Mb multilevel NOR Flash,Since2001,he

has been with the Multilevel Design Team for

the128-Mb Flash project,focusing on design

testability.

Andrea Silvagni was born in Milan,Italy,in

1967.He received the Laurea degree in physics

from the University of Milan,Milan,Italy,in

1994.

From1994to2000,he was a Design Engineer

in the Microcontroller Division,STMicroelec-

tronics,Agrate Brianza,Italy.He worked on

application-specific automotive Flash devices

and developed various static RAM and erasable

programmable ROM memories embedded in

8/16-b microcontrollers.From1997to2000,

he was design responsible for the development of a family of embedded

single-voltage3-V supply Flash for16/32-b microcontrollers.Since2000,

he has been Project Leader of high-density multilevel Flash memory

devices within the Memory Product Group,STMicroelectronics.

536PROCEEDINGS OF THE IEEE,VOL.91,NO.4,APRIL2003

flash声音控制 加载库内文件

flash声音控制加载库内文件 2007年09月03日星期一 14:24 声音的一些属性与方法： mySound=newSound();//新建一个声音对象，对象的名称是mySound。mySound.start(n);//开始在n秒播放声音，当n为空时,从开始播放。mySound.stop();停止声音的播放。 音量控制：(范围从0-100) mySound.getVolume();获取当前的音量大小。 mySound.setVolume();设置当前音乐的音量。 左/右均衡：（范围从-100到100） mySound.getPan();获取左右均衡的值。 mySound.setPan();设置左右均衡的值。 声道音量： mySound.getTransform();获取左右声音的音量。 mySound.setTransform();设置左右声道的音量。 读取声音： mySound.loadSound();从外部载入声音。 mySound.attachSound();从库中加载声音。 mySound.getBytesLoaded();获取声音载入的字节数 mySound.getBytesTotal();获取声音的总字节数。 声音对象的属性： mySound.duration;声音的长度。 mySound.position;声音已播放的毫秒数。 声音对象的函数： mySound.onLoad;声音载入时调用。 mySound.onComplete;声音播放完成时调用。 在对声音进行AS控制前，我们先将解声音一些基本属性的控制和flash所遇到的声音的问题。 一：声音类型的选择： 一般情况下，我们习惯听MP3的音乐，如果我们要从外部加载声音的话，flash只支持MP3,其他的声音不允许被加载（不支持其他的声音）。但我们在誓时候却发现这个问题，使用mp3的声音导出的SWF文件是非常的大，而我们使用wav导出的文件却非常的小,为什么呢？因为mp3本身就是一种压缩格式，而我们的flash在导出声音的时候，也是压缩格式，好比一个被挤干了水的海绵，不能在从里面挤出水来。而wav则像是一块没被挤过的水的海绵，则他可以大幅度的压缩。所以，我们不需要从外部导入声音的时候，一定要使用WAV格式的声音，而在外部导入声音的时候一定要使用mp3格式的声音。但我们如果从内部导入声音，其导出也是压缩格式，所以，我们使用内部导出声音的时候，也要使用WAV 格式声音文件！ 二：数据流与事件的区别 我们导入到flash中一个声音文件，然后在帧中间插入该声音，然后将时间线放入到声音第一帧处，按下键盘的回车键。然后我们听到声音后在按下回车键，

flash动画代码中的flash动作代码大全

flash动画代码中的flash动作代码大全 一、几种Action命令 1．影片的播放与停止： Play( )；//播放命令 stop( )；//停止命令 2．改变Frame流向命令 gotoAndPlay(frame) //跳到指定的画面并连续播放。 gotoAndStop(frame) //跳到指定的画面并停止播放。 gotAndplay(“场景名称”，frame)//跳到指定场景帧并连续播放。 gotoAndStop(“场景名称：，frlme)//跳到指定场景帧并停止播放。 nextFrame( )；//跳到下一帧播放； PrevPrame( )；//跳到上一帧播放。 3．控制影片剪辑的播放与停止：tellTarget命令 如：tellTarget(“C1”) {gotoAndStop(2)；}//跳影片剪辑实例C1的第2帧并停止。 二、几种功能元件的制作方法 1．计时器的制作 单击菜单Insert／new symbol，在弹出的对话框中输入插入的符号名称(如：计时器)，确定后选择文字工具，属性为动态(Dynamic text)，在第一帧中画两个文本框。分别设置变量名为munite和timer,在两个文本框之间画一个形如冒号的圆点(这两个圆点可以做成一个符号，类型为电影片段，每秒闪动一次．然后拖入到两文本框之间。在第二帧插入帧。在第一帧输入动作脚本(Action)如下： //设置时间的初值 if(!started) { start_time=getTimer(); started=true; timer=0; i=o; munite＝0; } x=getTimer()-start_time；//计算时间的变化 x=int(x／1000)； //时间的单位为1000分之一秒 y=x-60*i if (y>59) {i=i+1；munite=munite+1 timer=timer+1： } else {timer=y} 该符号制作完毕后。将其拖入主场景中即可。 2．智能判断选择题，并作正误提示 单击菜单Insert/new symbo1,在弹出的对话框中输入插入的符名称。如：“对错提示”。 符号类型为“电影片段”。在第一帧输入文本“在括号内输入答案，按enrer键确定“在 该帧上输入动作脚本： _root.flah＝false；_root.ans=" ";gotoAndStop(1);在第16帧插入空关键帧。在该帧上 画一个形如“x”的图或输入文本“x”，在第30帧插入关键帧，帧AAction为_root.ans=" "：gotoAndStop(31)；在第31帧插人空白关键帧，在该帧上输人静态文本“请重作，按e nter键确定。“在该帧输入脚本：“stop()；”至此，该符号制作主或：例如：

初中信息技术《Flash软件制作简单动画》教案

初中信息技术《Flash软件制作简单动画》教案 一、教学目标 【知识与技能】 能独立表述动画制作中涉及的基本概念并能自己动手完成动画制作的一般步骤。 【过程与方法】 通过制作“移动的小球”动画，了解FLASH动画制作的过程，并从中总结出动画制作的主要步骤。 【情感态度与价值观】 学在理论学习和动手操作的过程中，激发学习动画制作的兴趣，并且逐步培养乐于接受和探究新知识的精神。 二、教学重难点 【重点】 Flash动画制作的一般过程，基本操作方法以及任务的实现。 【难点】 初步理解关键帧和动作补间动画的概念。 三、教学过程 环节一、创设情境，课堂导入 老师出示“小破孩”动画作品。告诉学生这是用Flash制作的。 同学们，老师今天给大家带了一个很有趣的《小破孩》动画短片。大家一起来看一下。动画播放完了。昨天，我们已经认识了flash，这个小短片啊，就是用flash制作出来的。 大家想不想也能做这样的短片呀?非常想，好，那我们今天就来尝试一下。刚刚小短片中有一个片段是小破孩把皮球踢向墙壁，结果皮球弹回来砸到了他自己。这一段很好玩。我们就来做这一段中那个滚动的小球，大家觉得怎么样? 环节二、分析任务 1.Flash影片的制作过程： 动画小本--确定演员(元件)--制作动画--测试--发布。 首先要有一个构思，我们称为动画小本，其次就像电影都有演员，我们动画也是有对象的，我们把它成为元件。元件其实就是可以重复使用的对象。再次我们就可以开始制作动画了。那么动画有没有达到我们想要的效果呢，我们对它进行一个测试，测试通过了之后我们就可以发布了。 2.小球滚动效果图展示以及任务的分析：小球由左向右滚动，而这个任务中涉及的要素就是小球(图形元件)。 环节三、任务完成 1.创建元件：

FLASH CS4 控制音频播放

FLASH CS4 控制音频播放 在之前的章节中，已介绍了如何在Flash中加载声音。Flash CS4除了加载声音外，还可以对声音播放进度进行一系列的控制，如播放、暂停、停止。除此之外，还可以控制音量的大小。 1．停止声音 在之前的章节中已经介绍了如何在Flash中播放音频。在制作音频播放器时，除了需要播放音频外，还需要控制音频的停止。这需要使用到flash.media包中的SoundMixer类。 SoundMixer是一种控制全局的类，其可以控制由Flash影片播放的所有声音流，并且拥有多种全局控制的属性和方法。也是说，SoundMixer并不控制动态创建的Sound对象。 SoundMixer常用的属性主要有两种： ●bufferTime 该属性的作用是设置声音流在开始传输前预加载的时间，单位为秒。 ●soundTransform 该属性的作用是为SoundMixer对象引入控制全局的SoundTransform对象。 SoundMixer的这两种属性都属于静态方法，仅可以操作嵌入到Flash影片中的声音，无法对在ActionScript中动态创建的声音进行操作。除了以上的属性外，SoundMixer还包含3种常用的方法。 ●areSoundsInaccessible() 确定是否因安全限制而无法访问声音 ●computeSpectrum() 获取当前声音的波形快照，并将其放在指定的ByteArray对象中。 ●stopAll() 停止当前播放的所有声音。 例如，在一个播放器中，停止播放的按钮实例名称为stopBtn，则为其添加的停止播放代码如下。 stopBtn.addEventListener(MouseEvent.CLICK,stopMusic); function stopMusic(event:MouseEvent):void{ SoundMixer.stopAll(); } 需要注意的是，在使用stopAll()方法时，所引用的SoundMixer类本身，而不是该类的实例。 2．暂停与继续 除了停止声音播放外，很多播放器还可以实现暂停声音播放，当需要时再从当前暂停的位置继续播放。在Flash中，暂停声音播放需要使用flash.media包中的SoundChannel类。 SoundChannel类的作用主要是控制Flash影片中的声道，监控声道的幅度、播放的进度等。通过其Position属性可以记录当前播放的时间，然后使用stop()方法停止该声道的播放。 当需要声音继续播放时，则可以为Sound类的play()方法加参数，使其继续按照记录的已播放时间播放声音。 例如，获取名为bgmusic.mp3的外部声音文件，实现控制该文件的暂停播放和继续播放，代码如下。 var music:Sound= new Sound(new URLRequest("bgmusic.mp3")); //加载外部声音 var channel:SoundChannel; //声明声道 var pauseBtn:SimpleButton=new SimpleButton(); //实例化暂停按钮 var playBtn:SimpleButton=new SimpleButton();

flash声音加载和控制

一、在时间轴中使用声音 这是Flash中声音最常使用的方式，任何一本Flash教材都会讲到这个问题，所以只作简单说明。 在设置一个关键帧后，只要你导入了声音文件，在帧属性面板都能进行该帧的声音设置。声音的同步属性（Sync）主要有以下几种： 1．事件（Event）。用这种方式设置的声音会独立于时间轴播放，只要你没有用其它方式中止，它会一直播放下去直到结束，其最大好处是可以用来设置一些类似循环的播放效果，只要你把它后面的循环属性（Loop）设置得足够大。 2．开始（Start）。其特点是，当该帧开始播放，将停止动画中前面帧调用的声音，只播放当前帧中的声音。 3．停止（Stop）。设置后，将立即停止播放当前帧的声音。 4．数据流（Stream）。设置后，会使动一的播放与声音同步，如果动画下载速度跟不上声音，将跳过相关帧而保持与声音同步。另外，如果在播放中设置了（Stop）动画停止，声音也将停止；但如果使用play()语句，声音又将从停止处接着播放。 二、用ActionScript语句调用声音 Flash提供了强大的脚本编辑功能，几乎能与一些专门的编程语言相媲美，在多媒体方面可谓更胜一筹，用Flash脚本语言调用声音，在无论是效果还是灵活性，都值得一试。 1．加入声音 导入外部声音，按Ctrl+L键，弹出库窗口，选中导入的声音，单击右键，在弹出菜单中选择“链接”菜单项，弹出“链接属性”对话框，先选中“为动作脚本导出”复选框，此时对话框上部的“标识符”一栏将变得可用，在其中输入其标识名，在此我们假设输入为“sd”，此标识将在程序中作为该声音的标志，故多个声音不得使用同一个标识符。 在Flash时间轴上的第一帧输入以下语句： mysong = new Sound() mysong.attachSound("sd") 以上语句先定义一个声音事件mysong，再用mysound.attachSound("sd")语句将库中的声音附

flash使用代码大全

外部调用swf on (release) { loadMovieNum("", 1); } 外部调用数据 loadVariablesNum("", 0); = true;wf和.exe），在Flash制作过程中，按“Ctrl+Enter”预览动画，以及把动画发布成网页文件时，此指令无法发挥它的功能。 Fscommand指令使用的语法是：Fscommand("command","arguments") Command是指令的相关命令，arguments是命令的参数。 下面我们就来讲讲如何通过Fscommand指令来实现全屏播放、取消Flash播放时的右键菜单以及关闭Flash动画。 1、全屏播放Flash “Fullscreen”是全屏的意思，在默认的情况下，Flash动画不是以全屏播放（false ），如果需要让动画以全屏状态播放，就必须把Fullscreen命令设置为True，写为：Fscommand ("Fullscreen","True"); 根据需要，我们可以把它写到帧、按钮、MC（Movie Clip）中。 2、取消右键菜单 Showmenu命令是用来设置是（True）否（false）显示Flash动画播放器的快捷菜单的全部指令，即右击鼠标时弹出的菜单，默认为True，如果要取消弹出的菜单，必须在第一帧这样设置： Fscommand ("showmenu","false"); 3、关闭动画 quit命令是用来关闭播放器的.swf和.exe文件，该命令没有参数，写为： fscommand ("quit")； 如果你想在flash动画结束时出现一个关闭动画的按钮，可以按下面的步骤做。 执行“Insert”下的“New Symbol”（或按Ctrl+F8），在弹出的窗口中选Button，然后制作一个简单的按钮，回到场景中，选中最后一帧，从“Library”中把刚刚建立的按钮拖到场景中，因为该按钮在动画的最后才显示。 给按钮写上如下代码，则实现按下按钮即关闭flash动画。 on (release) { fscommand ("quit"); } 一、几种Action命令

[AS3.0编程教学]最全的声音控制方法

[AS3.0编程教学]最全的声音控制方法 网上做flash音乐播放器的人不少，这个作品主要是对声音的外部读取，然后保存，然后控制播放，暂停，停止等操作，今天这个作品就是向大家展示这些操作的方法。 1.首先我们新建一个文件，在舞台上摆出下面这些按钮，我们今天对这个声音文件的操纵就如按钮所 示： 2. 2 动手之前我们按下Ctrl+Shift+F12,打开ActionScript设置，将“自动申明舞台对象”打钩取消，我们将每个对象自己用Public声明，这样做的好处是开发时每个元件的属性方便引用和提醒。

3. 3 我们新建一个文档类，首先声明舞台上这些按钮，并定义声音变量：testSound，控制变量testChannel，testTrans，testPosition。 publicvarbtnPlay:SimpleButton; publicvarbtnPause:SimpleButton; publicvarbtnStop:SimpleButton; publicvarbtnQuick:SimpleButton; publicvarbtnVocUp:SimpleButton; publicvarbtnVocDown:SimpleButton; publicvarbtnPanUp:SimpleButton; publicvarbtnPanDown:SimpleButton; privatevartestSound:Sound; privatevartestChannel:SoundChannel;

privatevartestPosition:Number=0; 4. 4 首先用下面代码将一首叫做“test.mp3"的音乐加载到舞台。public function TestSoundMain() { testSound = new Sound(); testChannel=new SoundChannel(); testTrans = new SoundTransform(); testSound.load(new URLRequest("test.mp3")); testSound.addEventListener(https://www.wendangku.net/doc/fe8411498.html,PLETE,soundLoadOver); }

flash音乐控制的代码

音乐控制-5-的代码理解 1. 主控部分的代码 var temp = 1; //音乐序号 function aa() { mysound = new Sound(); //创建声音类的对象 mymusic_array = new Array("mp3", "mp31", "mp32", "mp33"); //数组声音 mysound.attachSound(mymusic_array[temp-1]); //以时间声音的方式加载数组声音 //mysound.start(); //开始播放 mysound.onSoundComplete = function() { temp++; //声音播放完成后声音序号加1 if (temp>4) { //如果序号加一后大于4 序号就变为1 重新开始播放第一首歌曲 temp = 1; } aa(); //重新执行aa()函数 };

onEnterFrame = function () { mysound.setV olume(_root.yinliang.huakuai._x); //设置音量 myarray = new Array("好想大声说爱你", "只凝视着你", "直到世界的心头", "捕捉闪耀的瞬间"); //歌曲名字数组 music_name = myarray[temp-1]; //输出歌曲名字 zongchangdu = int(mysound.duration/1000); duration：声音的持续时间（以毫秒为单位）。 //歌曲总长度，以毫秒为单位 yibofang = int(mysound.position/1000); position：声音已播放的毫秒数。如果该声音循环播放，则在每次循环开始时，将 position 重置为 0。 //已经播放的声音以毫秒为单位 _root.bofangtiao.huakuai._x = 240*(yibofang/zongchangdu); //播放条 }; }

Flash CS4 控制声音播放

Flash CS4 控制声音播放 在开始加载声音文件后，为Sound对象调用play()方法可以播放加载的声音。play()方法的基本形式如下。 sound.play(startTime,loops,sndTransform); play()方法可以接受以上3个可选参数，其详细介绍如下所示。 ●startTime 播放声音的起始位置（以毫秒为单位）。 ●loops 定义在声道停止播放之前，声音循环回startTime值的次数。该参数的最小值为0，即播放一次。如 果传递的值为负数，仍然播放一次。 ●sndTransform 分配给该声道的初始SoundTransform对象。 play()方法返回一个SoundChannel对象，用于控制一种声音的播放。可以将该对象的position属 例如，加载外部的music.mp3文件，并侦听该声音文件的加载完成事件。当加载完成时，调用onComplete()函数以开始播放声音。 import flash.events.Event; import flash.media.Sound; import https://www.wendangku.net/doc/fe8411498.html,.URLRequest; var sound:Sound = new Sound(); var req:URLRequest = new URLRequest("music.mp3"); sound.load(req); sound.addEventListener(https://www.wendangku.net/doc/fe8411498.html,PLETE, onLoadComplete); function onLoadComplete(event:Event):void{ sound.play(); } 如果想要停止加载声音，可以使用Sound对象的close()方法。该方法关闭声音流，从而停止所有数据的下载。close()方法的基本形式如下所示。 sound.close();

Flash常用的动作命令

Flash常用的动作命令一．Flash中的常用命令 １、在当前帧停止播放 on(release){ stop(); } ２、从当前帧开始播放 on(release){ play(); } ３、跳到第 10 帧，并且从第 10 帧开始播放 on(release){ gotoAndPlay(10); } ４、跳到第 20 帧，并且停止在该帧 on(release){ gotoAndStop(20); } ５、跳到下一个场景，并且继续播放 on(release){ nextScene(); play(); } ６、跳到上一个场景，并且继续播放 on(release){ prevScene(); paly(); } ７、条到指定的某个场景，并且开始播放 on(release){ gotoAndPlay("场景名",1); } ８、播放器窗口全屏显示 on(release){ fscommand("fullscreen", true);

} ９、取消播放器窗口的全屏 on(release){ fscommand("fullscreen", false); } 10、播放的画面，随播放器窗口大小的，改变而改变 on(release){ fscommand("allowscale", true); } 11、播放的画面，不论播放器窗口有多大，都保持原尺寸不变 on(release){ fscommand("allowscale", false); } 12、打开一个网页，如果该“网页”和“flash动画”在同一个文件夹里on(release){ getURL("https://www.wendangku.net/doc/fe8411498.html,"); } 13、打开一个网页，如果该“网页”是在网络上的其他站点里 on(release){ getURL(https://www.wendangku.net/doc/fe8411498.html,); } 14、跳转帧（按纽动作，释放跳转） on (release) { gotoAndPlay(1); } 15、播放 on(release){play();} 16、停止 on(release){stop();} 17、跳到第N帧开始播放 on(release){gotoAndplay(N);} 18.跳到第N帧停止 on(release){gotoAndstop(N);} 二.Flash中关于声音的常用命令 1.new Sound()//创建一个新的声音对象；

flash使用代码大全

FLASH实用代码大全|flash动作代码 外部调用swf on (release) { loadMovieNum("", 1); } 外部调用数据 loadVariablesNum("", 0); = true;wf和.exe），在Flash制作过程中，按“Ctrl+Enter”预览动画，以及把动画发布成网页文件时，此指令无法发挥它的功能。 Fscommand指令使用的语法是：Fscommand("command","arguments") Command是指令的相关命令，arguments是命令的参数。 下面我们就来讲讲如何通过Fscommand指令来实现全屏播放、取消Flash播放时的右键菜单以及关闭Flash动画。 1、全屏播放Flash “Fullscreen”是全屏的意思，在默认的情况下，Flash动画不是以全屏播放（false ），如果需要让动画以全屏状态播放，就必须把Fullscreen命令设置为True，写为：Fscommand ("Fullscreen","True"); 根据需要，我们可以把它写到帧、按钮、MC（Movie Clip）中。 2、取消右键菜单 Showmenu命令是用来设置是（True）否（false）显示Flash动画播放器的快捷菜单的全部指令，即右击鼠标时弹出的菜单，默认为True，如果要取消弹出的菜单，必须在第一帧这样设置： Fscommand ("showmenu","false"); 3、关闭动画 quit命令是用来关闭播放器的.swf和.exe文件，该命令没有参数，写为： fscommand ("quit")； 如果你想在flash动画结束时出现一个关闭动画的按钮，可以按下面的步骤做。 执行“Insert”下的“New Symbol”（或按Ctrl+F8），在弹出的窗口中选Button，然后制作一个简单的按钮，回到场景中，选中最后一帧，从“Library”中把刚刚建立的按钮拖到场景中，因为该按钮在动画的最后才显示。 给按钮写上如下代码，则实现按下按钮即关闭flash动画。 on (release) { fscommand ("quit"); }

flash声音控制代码

flash声音控制代码 我们在用as来控制声音之前，一定要先使用构造函数new Sound创建声音对象。只有先创建声音对象以后，FLASH才可以调用声音对象的方法。还有，FLASH的action是区分大小写的， 所以在写action的时候，一定要注意。 mySound=new Sound();//新建一个声音对象，对象的名称是mySound。 声音对象的控制方法： 播放与停止： mySound.start();开始播放声音。 如想在声音的某一秒中播放，可输入mySound.start(2);即：从声音的第二秒开始播放。(这里的单位只能是秒） mySound.stop();停止声音的播放。 stopAllSounds();停止播放所有声音。 音量控制：(范围从0-100) mySound.getVolume();获取当前的音量大小。 mySound.setVolume();设置当前音乐的音量。 左/右均衡：（范围从-100到100） mySound.getPan();获取左右均衡的值。 mySound.setPan();设置左右均衡的值。 声道音量： mySound.getTransform();获取左右声音的音量。 mySound.setTransform();设置左右声道的音量。 这是一个比较特殊的参数，在设置setTransform前，要先为它新建一个对像才可以。 读取声音： mySound.loadSound();从外部载入声音。 mySound.attachSound();从库中加载声音。

mySound.getBytesLoaded();获取声音载入的字节数。 mySound.getBytesTotal();获取声音的总字节数。 声音对象的属性： mySound.duration;声音的长度。(单位为毫秒。即：1000毫秒＝1秒） mySound.position;声音已播放的毫秒数。(单位为毫秒） 声音对象的函数： mySound.onLoad;声音载入时调用。 mySound.onComplete;声音播放完成时调用。 ----------------------------------------------------------------------------------------------------------------------------------------- 简单实例： 用as来控制，就需要用as来读取声音。用as读取声音有两种方式：attachSound 和loadSound。 attachSound是从FLASH的库中挷定一个声音。这个声音需要我们先导入一个声音文件。方法：文件→ 导入到库（选择一个声音文件，确定即可）→打开库面板（窗口→库）→右键选择我们刚才导入的声音文件→ 在右键菜单中找到链接→选中为动作脚本导出，在标识符上为这个声音对象起一个名称如"music"。 然后用attachSound("music");来读取声音。 loadSound则是从外部读取声音文件，方法：loadSound("music");从外部读取文件时只允许载入MP3文件。 其它格式是不能够读取的。 记得文件名和标识符要加上引号，否则FLASH会将它当做一个变量处理。 了解了as读取声音的两种方法以后，我们只需要用start();方法将这个声音播放即可。 将声音文件导入到库，打开库面板，右键单击我们刚导入的声音文件，并选择链接，勾选为动作脚本导出和 在第一帧导出。在上面的标识符上输入music

flash声音控制滑块

前言：一个好的flash作品，缺少了声音，就如同人不会讲话相同。而flash中对声音的支持也很不错，除了能够使用时间轴放置声音文档之外，我们还能够使用ＡＳ来更加准确的控制声音！ 一、ＦＬＡＳＨ中如何创建声音控件 假如想控制动画中的声音，我们能够使用flash中的sound对象，通过sound命令创建一个新的sound 对象。之后再用attaceSound命令连接到库里的声音，就能够用来控制动画中的声音了。 常用命令讲解： new Sound() 此命令用来创建一个新的sound对象，有了sound对象我们才能用ＡＳ来控制声音。 attachSound("库中的声音") 此命令能够使我们创建的声音对象连接到库里的声音，以便进行控制。

start([从第几秒开始播放, 循环次数]) 此命令能够是声音开始播放，里面的两个参数是可选的。 stop() 停止声音的播放。 setVolume(音量级别) 此命令能够控制声音的音量高低，音量级别只能是从０－１００之间的数字。 呵呵，罗嗦了半天，现在咱们也应该用ＡＳ先做一个简单的小例子了。 二、创建一个简单的声音播放动画，能够实现简单的开始和停止播放声音。 操作步骤： １、新建一个flash文档，按Ctrl+R（文档\导入）导入一个声音文档，声音文档能够是MP3或WAV格

式的。声音文档导入之后，在舞台上是看不见的，必须打开库才能看到我们导入的声音。如图： ２、选中库中的声音文档，单击鼠标右键，在弹出的菜单中选择“链接...”将会弹出一个链接的对话框，请勾选“为动作脚本导出”和“在第一桢导出”选项，并输入一个标识符：mysound （名字可任意写），单击确定。如下图：

(完整版)初中信息技术选择题flash部分汇总(1)(考试答案)

&&H&& A B C D &&D&& A Flash部分 1、Flash是一个（）软件 A. 动画制作 B. 文本编辑 C. 文字处理 D. 数据库软件 2、在默认状态下，Flash MX的作品每秒播放( )帧 A.8 B.10 C.12 D.15 3、下图中使用的是flash（）填充模式 A. 纯色 B. 位图 C. 线性 D. 放射状 4、下图中哪个图层中配有声音（） A. 图层1 B. 图层2 C. 图层3 D. 图层4 5、在Flash中，图层面板状态如下图所示，此时单击①所指向的按钮后（） A. 图层1将被删除 B.图层2将被删除 C. 图层3将被删除 D. 没有任何变化

6、下列选项中，引导线动画创建正确的是（） A. B. C. D. 7、在flash中，下图时间轴上用小黑点表示的帧是( ) A. 空白帧 B. 关键帧 C. 空白关键帧 D. 过渡帧 8、下列时间轴画面中，哪一个表示制作的过渡动画是成功的（） A. B. C. D. 9、如下图所示，当前橡皮工具的选项选择的是“擦除填色”，那么在胡萝卜上擦一笔会变成 A B C D 10、按照动画的制作方法和生成原理，Flash的动画类型主要分为哪两大类（） A. 动作补间动画和形状补间动画 B. 关键帧动画和补间动画 C. 引导层动画和遮罩层动画 D. 可见层动画和不可见层动画 11、以下对FLASH“运动动画”理解错误的是：（） A. 最少需要一个关键帧 B. 画完的图，应该先生成组件 C. 运动动画可以变化的有：位置、大小、旋转角度、透明度等 D. 可以配合引导层，制作曲线运动 12、使用Flash制作动画的过程中，由软件自动生成的帧是（） A. 关健帧 B. 空白帧 C. 空白关健帧 D. 过渡帧 13、Flash中，图层面板状态如下图所示，此时单击①所指向的按钮后（）

flash中声音的控制代码

flash中声音的控制代码 简单播放音乐 1. 首先打开新的Flash文件, 把声音导入库中(还摸不清介面的朋友就按ctrl+r) 2. 导入之后到库中定义声音的ID, 如图: *** 这里的ID和场景上的实体名是不一样的*** 3. 接下来就在第一帧编写代码, 如下 mySound = new Sound(); //定义声音类 mySound.attachSound("tomato"); //提取库中我们所设定的ID mySound.start(); //开始播放声音 4. 测试结果.. 音乐的开始, 停止和循环 mySound.start([Secondsoffset], loop); start当中的两个参数分别为Secondsoffset, Seconds就是秒数而offset就是抵消或取消的意思...所以简单的说就是取消开始播放,以秒数来计算... 没有定义的话就是0, 另外一个loop就是循环了... mySound.start(5, 99); 这个意思就是音乐从第5秒开始播放, 并循环99次, 这里提供了个例子为mySound.start(0,99); 点击浏览该文件 mySound.stop(); mySound.stop("tomato"); //如果new Sound没有定义的话就这

样使用, 不然多个声音会全部停止 这个很简单不用解释了吧...就是停止音乐 我们看到某些网站所使用的一个按钮控制播放和停止的效果就是使用这些就可以达成了, 如: mySound = new Sound(); mySound.attachSound("tomato"); mySound.start(0,99); //音乐开始播放并循环99次 var music = true; //定义一个变量记录目前音乐是否是在播放, 因为音乐已经播放所以设定为true btn.onRelease = function() { if(music) { //当变量为true时就表示音乐是在播放 mySound.stop(); //使用stop设定音乐停止 music = false; //变量记录false为音乐停止 } else { //以下的和以上相反 mySound.start(0,99); music = play; } } setPan和setVolume mySound.setPan(pan); pan的值是介于-100 到100, 用意在于设定喇叭的平衡 (100)

初中信息技术《flash动画》教案、教学设计

初中信息技术教学设计 学科：信息技术教育 课题：《运动渐变动画》 单位： 姓名： 设计时间：

《运动渐变动画》教学设计 1、所属模块：八年级上册信息技术基础 2、适用学段：初中二年级 3、所用教材：青岛出版社 4、建立学时：1 学时 【本课教学法要点】：信息素养与技术素养的有机结合；策略性，方法性内容 的教学方法；灵活变通的教学处理策略。 一、教学目标 1、知识目标 了解Flash 动画的分类；掌握运动渐变动画的特点。 2、技能目标 学会制作关键帧动画；掌握制作运动渐变动画的一般步骤。 3、情感、态度与价值观目标 通过制作爱丽丝动画，培养学生乐于助人、合作探究的精神。 二、教学重点，难点 1、教学重点 学会制作关键帧动画和运动渐变动画的步骤。 2、教学难点 运动渐变动画的制作步骤，及制作过程中操作错误的查找和分析。 三、教材分析 运动渐变动画的制作是本单元的重点之一，本节课主要定位在了解、掌握的程度上，通过关键帧动画和运动渐变动画的制作让学生感受动画制作的魅力，增强学生学习的兴趣。

四、学情分析 Flash 就像一个小巧机敏的精灵，美妙、神秘、让人浮想联翩，而其瞬息多变、充满神奇的动画效果又与初中生的年龄特点相似，很符合学生求新、求异的喜好初二年级的学生已经具备了初步的抽象逻辑思维能力，但仍对直观、感性的事物具有较大的兴趣，学习的自觉性有欠，因此，必须设计有效地任务，使学生亲身体验学习和制作的快乐，再通过小组合作、讨论、竞赛等方式，使学生们的知 识由理论转化为实际，以达到共同学习、共同提高的目的。 五、教学理念 在教学中，采用神秘导入、学习探究、任务驱动、小组协作，自主学习等方式组织教学活动。加涅认为“教育课程的重要的最终目标就是教学生解决问题”。让学生在活动中掌握应用信息技术解决问题的思想的方法。 【主要教学方法】：讲授法、演示法、任务驱动、情境教学等。 【主要学习方法】：小组协作学习、自主学习等。 六、教学策略设计 1、教学方法设计 这节课的主题是“运动渐变动画的制作”，主要是通过学习，掌握制作关键帧动画和运动渐变动画的策略和方法，首先确立了“学生主体，教师主导”的指导思想，在教学中采用上机操作，并结合图解法，提问法，演示法，讲授法，任务驱动法等进行教学，设计一些贴近生活的活动和教学案例，增强学生解决 实际问题的能力，也更能激发学生的学习兴趣。 2、计划使用哪些设备、软件、课件和资源 本节课的教学在多媒体网络机房进行，需要多媒体广播系统设备，自制ppt，Flash 软件。

初中信息技术flash达标测试 操作题

《初中信息技术实践指导(下册)》 第7章动画制作 本章达标测试 四、操作题 1．制作形状补间动画——生日蜡烛 形状补间动画“生日蜡烛”是在温馨的背景中放置了一个生日蛋糕，上面点燃着一支生日蜡烛，蜡烛的火焰被微风吹着轻轻地晃动。火焰形状的变化通过“形状补间动画”来实现，外围的火光跟随火焰移动通过“动画补间动画”来实现。 原始素材文件：第7章/实践指导/素材/蜡烛.fla 最终效果文件：第7章/实践指导/素材/生日蛋糕.swf 大致步骤： （1）打开素材文件“蜡烛.fla”。 （2）新建“火焰”影片剪辑元件。其中，“火焰”用“椭圆”工具绘制，在各关键帧用“部分选取”工具适当变形后，设置成“形状补间”动画；“火光”用“椭圆”工具绘制并转换成图形元件，再在各关键帧调整“火光”中点与火焰尖端位置对应后，设置成“动画补间”动画。 （3）在“场景1”中新建“图层2”，将“火焰”影片剪辑元件拖放到“图层2”的第1帧。 （4）测试影片后将文件保存为名为“生日蜡烛.fla”的源文件。

2．制作引导动画——流星雨 引导动画“流星雨”表现的是流星从天空中滑落下来的动画效果。流星沿弧线滑落通过“路径动画”来实现，而多个流星同时落下是通过影片剪辑来实现的。 原始素材文件：第7章/实践指导/素材/星星背景.jpg 最终效果文件：第7章/实践指导/素材/星星.swf 大致步骤： （1）新建文件，导入背景图片“星星背景.jpg”到“图层1”的第1帧。 （2）创建名为“流星”的影片剪辑。 在“流星”层创建“星星”元件作为运动对象（绘制“星星”的方法：选择“多角星形”工具，在“属性”面板中单击“选项”按钮，打开“工具设置”对话框，设置“样式”为“星形”）； 新建引导层绘制运动路径（弧线路径可用“直线”工具绘制一条斜向的直线后，用“选择工具”弯曲而成）； 在“流星”层中，调整各关键帧中“流星”的中心位置与运动路径的起点和终点吻合后， 创建“动画补间动画”。

Flash中的声音控制(as2.0)

Flash中的声音控制（as2.0） 前面讲过两种应用声音的控制方法，一种是导入时间轴，用play，stop等命令进行简单控制；另一种是利用组件工具来控制声音的播放。显然，这两种方法是简单的、易掌握的，但能实现的功能却有所局限。本文整理了Flash声音控制的另外两种方法。 一、用Sound 类的start 方法 很多人在制作一个带配音的Flash 课件时，会设计了两个按钮，一个按钮控制音乐的播放，另一个按钮控制声音的停止。当单击按钮让音乐停止后，再次单击控制音乐播放的 按钮，音乐却从头开始播放了。这里可以用Sound 类的start 方法来控制音乐播放。 用Sound 类的start 方法来播放音乐必须给出必要的参数，通过参数控制音乐从停止处开始播放。否则，音乐就是直接从头开始播放。用sound类的position属性和start方法结合在一起就可以解决这个问题。具体操作步骤是： （1）将音乐导入到“库”中。右击“库”中的音乐对象，在弹出的快捷菜单中选择“链接”命令，打开“链接属性”对话框，勾选“为动作脚本导出”和“在第一帧导出”复选项， 设置标识符为“mySound”。 （2）在第1帧上添加如下脚本： myMusic = new Sound();//建立一个名为myMusic的声音对象， myMusic.attachSound("mySound"); //将链接标识符为mySound的音乐捆绑到myMusic对象上。 （3）在播放音乐的按钮上添加如下脚本： on (press) { var t=myMusic.position/1000; //计算声音当前播放的位置 myMusic.start(t); //从当前位置开始播放 position 是Sound 类的一个属性，可以获得声音对象播放的当前位置。在制作Flash动画时，这个属性经常会被用到。比如制作MP3播放器，如果制作一个控制音乐播放进度的滑块，那么就可以用这个属性来实现相应的算法。 (注意：在操作时要注意字母的大小写) 二、利用影片剪辑来控制声音 （一）导入声音素材 点击【文件】|【导入】|【导入到库】菜单命令，在弹出的【导入到库】对话框中，找到你要导入的声音文件，选中后点击打开按钮，将声音导入到库。 （三）制作声音影片剪辑元件： （1）点击【插入】|【新建元件】菜单命令，在弹出的新建元件对话中，名称输入“声音”、行为选【影片剪辑】，确定。 （2）选中“图层1”的第1帧，打开属性面板，在声音设置的对话框中，选择你导入的声音件，并在同步选项中选择数据流，如图1所示。

flash声音控制

FLASH声音被广泛应用在网页、MTV、片头等FLASH动画当中。一段美好的音乐会给你的动画添加更多的精彩。声音的控制便成了必不可少的部分。本教程为大家从基础知识、简单示例到最后的实例制作，一步一步为大家讲解声音控制的方法。 各位在做实例的时候，一定要注意影片剪辑和主场景中的切换，不要弄混了。教程中用红色字为大家注明了一些重点和需要注意的事项。而在后面的程序设计中，我用桔黄色字为大家标出了在制作过程中来回切换场景和一些注意事项。看到这些颜色的字时，大家要仔细一些。 基础知识： 在开始讲解声音控制之前，先让大家熟悉一下声音的各种调节参数，这在一会儿的效果解释的时候，可以让你更容易地去理解。下面为大家列出FLASH中常用的音量控制方法、函数以及属性。 注意：在这其中，mySound是一个声音对象，我们在用as来控制声音之前，一定要先使用构造函数newSound创建声音对象。只有先创建声音对象以后，FLASH才可以调用声音对象的方法。还有，FLASH 的action是区分大小写的，所以在写action的时候，一定要注意。 mySound=newSound();//新建一个声音对象，对象的名称是mySound。 声音对象的方法： 播放与停止： mySound.start();开始播放声音。如想在声音的某一秒中播放，可输入Sound.start(2),即：从声音的第二秒开始播放。(这里的单位只能是秒） mySound.stop();停止声音的播放。 音量控制：(范围从0-100) mySound.getVolume();获取当前的音量大小。 mySound.setVolume();设置当前音乐的音量。 左/右均衡：（范围从-100到100） mySound.getPan();获取左右均衡的值。 mySound.setPan();设置左右均衡的值。 声道音量： mySound.getTransform();获取左右声音的音量。 mySound.setTransform();设置左右声道的音量。 这是一个比较特殊的参数，在设置setTransform前，要先为它新建一个对像才可以。因为篇幅有限，在这里不为大家讲解了。如果有兴趣，请参看FLASH的帮助文件。 读取声音：