PCH2008中文资料

THYRISTOR MODULE

Parameter Parameter

Conditions Conditions

Max Rated Max Rated

Value Value

Unit

Average Rectified Output Current I O(AV)

50Hz Half Sine Wave condition

Tc=65°C

200 A

RMS On-State Current I T(RMS) 314 A

Surge On-State Current I TSM 50 Hz Half Sine Wave,1Pulse

Non-Repetitive 4000 A

I Squared t

I 2t 2msec to 10msec 80000 A 2s

Critical Rate of Turned-On Current di/dt V D =2/3V DRM , I TM =2?

I O , Tj=125°C

I G =300mA, di G /dt=0.2A/μs

100 A/μs

Peak Gate Power

P GM 5 W

Average Gate Power P G(AV) 1 W Peak Gate Current I GM 2 A Peak Gate Voltage

V GM 10 V Peak Gate Reverse Voltage

V RGM 5 V Operating JunctionTemperature Range Tjw -40 to +125°C Storage Temperature Range Tstg -40 to +125°C Isoration Voltage

Viso Base Plate to Terminals, AC1min 2000 V

Case mounting

M6 Screw 2.5 to 3.5

Mounting torque

Terminals

Ftor M8 Screw 9.0 to 10.0

N ?m

Value per 1 Arm

P C H

Electrical ? Thermal Characteristics

Maximum Value.

Characteristics

Symbol Test Conditions Min. Typ. Max.Unit

Peak Off-State Current I DM V DM = V DRM, Tj= 125°C 30 mA Peak Reverse Current I RM V RM = V RRM, Tj= 125°C 30 mA Peak Forward Voltage V TM I TM = 600A, Tj=25°C

1.34V Tj=-40°C

300

Tj=25°C

150

Gate Current to Trigger

I GT

V D =6V,I T =1A Tj=125°C 80 mA Tj=-40°C

5

Tj=25°C

3

Gate Voltage to Trigger

V GT V D =6V,I T =1A Tj=125°C

2

V Gate Non-Trigger Voltage

V GD

V D =2/3V DRM Tj=125°C

0.25 V Critical Rate of Rise of Off-State Voltage dv/dt V D =2/3V DRM Tj=125°C 500 V/μs Turn-Off Time tq I TM =I O ,V D =2/3V DRM

dv/dt=20V/μs, V R =100V -di/dt=20A/μs, Tj=125°C 100 μs Turn-On Time tgt 6 μs Delay Time td 2 μs Rise Time

tr V D =2/3V DRM Tj=125°C I G =300mA, di G /dt=0.2A/μs

4 μs Latching Current I L Tj=25°C 100 mA

Holding Current I H Tj=25°C

60 Rth(j-c)

Junction to Case

0.23

Thermal Resistance

Rth(c-f)

Base Plate to Heat Sink

with Thermal Compound

0.1

°C/W

Value Per 1Arm