1MBI200N-120中文资料
IGBT MODULE ( N series )
n Features
? Square RBSOA
? Low Saturation Voltage
? Less Total Power Dissipation
? Improved FWD Characteristic
? Minimized Internal Stray Inductance
? Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
? High Power Switching
? A.C. Motor Controls
? D.C. Motor Controls
? Uninterruptible Power Supply
n
Outline Drawing
n Maximum Ratings and Characteristics
? Absolute Maximum Ratings ( T c=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage V CES1200V
Gate -Emitter Voltage V GES± 20V
Continuous I C200
Collector1ms I C PULSE400
Current Continuous-I C200
1ms-I C PULSE400
Max. Power Dissipation P C1500W
Operating Temperature T j+150°C
Storage Temperature T stg-40 ～ +125°C
Isolation Voltage A.C. 1min.V is2500V
Mounting *1 3.5
Screw Torque Terminals *2 4.5Nm
Terminals *3 1.7
Note:*1:Recommendable Value; 2.5 ～ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ～ 4.5 Nm (M6)
*3:Recommendable Value; 1.3 ～ 1.7 Nm (M4)
? Electrical Characteristics ( at T j=25°C )
Items Symbols Test Conditions Min.Typ.Max.Units Zero Gate Voltage Collector Current I CES V GE=0V V CE=1200V 4.0mA Gate-Emitter Leackage Current I GES V CE=0V V GE=± 20V60μA Gate-Emitter Threshold Voltage V GE(th)V GE=20V I C=200mA 4.57.5V Collector-Emitter Saturation Voltage V CE(sat)V GE=15V I C=200A 3.3V Input capacitance C ies V GE=0V32000
Output capacitance C oes V CE=10V11600pF Reverse Transfer capacitance C
res
f=1MHz10320
t ON V CC=600V0.65 1.2
t r I C=200A0.250.6
t OFF V GE=± 15V0.85 1.5
t f R G=4.7?0.350.5
Diode Forward On-Voltage V F I F=200A V GE=0V 3.0V Reverse Recovery Time t rr I F=200A350ns
? Thermal Characteristics
Items Symbols Test Conditions Min.Typ.Max.Units
R th(j-c)IGBT0.085
Thermal Resistance R th(j-c)Diode0.22°C/W
R th(c-f)With Thermal Compound0.0125
n Equivalent Circuit
0100200300400
10
100
1000
t
f
t
r
t
off
t
on
Switching time vs. Collector current
V
CC
=600V, R
G
=4.7?, V
GE
=±15V, T
j
=25°C
S
w
i
t
c
h
i
n
g
t
i
m
e
:
t
o
n
,
t
r
,
t
o
f
f
,
t
f
[
n
s
e
c
]
Collector current : I
C
[A]
012345
100
200
300
400
500
V
GE
= 20V, 15V, 12V, 10V,
Collector-Emitter voltage : V
CE
[V]
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
:
I
C
[
A
]
8V
Collector current vs. Collector-Emitter voltage
T
j
=125°C 012345
100
200
300
400
500
Collector current vs. Collector-Emitter voltage
T
j
=25°C
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
:
I
C
[
A
]
Collector-Emitter voltage : V
CE
[V]
8V
V
GE
= 20V, 15V, 12V, 10V
0510152025
2
4
6
8
10
100A
200A
400A
Collector-Emitter vs. Gate-Emitter voltage
T
j
=25°C
I
C
=
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
v
o
l
t
a
g
e
:
V
C
E
[
V
]
Gate-Emitter voltage : V
GE
[V]
0510152025
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
T
j
=125°C
100A
200A
400A
I
C
=
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
v
o
l
t
a
g
e
:
V
C
E
[
V
]
Gate-Emitter voltage : V
GE
[V]
0100200300400
10
100
1000
Switching time vs. Collector current
V
CC
=600V, R
G
=4.7?, V
GE
=±15V, T
j
=125°C
t
f
t
r
t
on
t
off
S
w
i
t
c
h
i
n
g
t
i
m
e
:
t
o
n
,
t
r
,
t
o
f
f
,
t
f
[
n
s
e
c
]
Collector current : I
C
[A]
0,0010,010,11
0,001
0,01
0,1IGBT
Diode
Transient thermal resistance
T
h
e
r
m
a
l
r
e
s
i
s
t
a
n
c
e
:
R
t
h
(
j
-
c
)
[
°
C
/
W
]
Pulse width : PW [sec]
05001000150020002500
200
400
600
800
1000
800V
600V
V
CC
=400V
5
10
15
20
25
Dynamic input characteristics
T
j
=25°C
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
v
o
l
t
a
g
e
:
V
C
E
[
V
]
Gate charge : Q
G
[nC]
10
100
1000
t
f
t
r
t
off
t
on
Switching time vs. R
G
V
CC
=600V, I
C
=200A, V
GE
=±15V, T
j
=25°C
S
w
i
t
c
h
i
n
g
t
i
m
e
:
t
o
n
,
t
r
,
t
o
f
f
,
t
f
[
n
s
e
c
]
Gate resistance : R
G
[?]
012345
100
200
300
400
500
T
j
=125°C 25°C
Forward current vs. Forward voltage
V
GE
=OV
F
o
r
w
a
r
d
c
u
r
r
e
n
t
:
I
F
[
A
]
Forward voltage : V
F
[V]
0100200300400
100
I
rr
25°C
t
rr
25°C
t
rr
125°C
I
rr
125°C
Reverse recovery characteristics
t
rr
, I
rr
vs. I
F
R
e
v
e
r
s
e
r
e
c
o
v
e
r
y
c
u
r
r
e
n
t
:
I
r
r
[
A
]
R
e
v
e
r
s
e
r
e
c
o
v
e
r
y
t
i
m
e
:
t
r
r
[
n
s
e
c
]
Forward current : I
F
[A]
0200
40060080010001200
400
800
1200
1600
2000
RBSOA (Repetitive pulse)
SCSOA
(non-repetitive pulse)
Reversed biased safe operating area
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>4.7?
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
:
I
C
[
A
]
Collector-Emitter voltage : V
CE
[V]
05101520253035
1
10
100
C
res
C
oes
C
ies
Capacitance vs. Collector-Emitter voltage
T
j
=25°C
C
a
p
a
c
i
t
a
n
c
e
:
C
i
e
s
,
C
o
e
s
,
C
r
e
s
[
n
F
]
Collector-Emitter Voltage : V
CE
[V] 0100200300400
10
20
30
40
50
60
E
rr
25°C
E
rr
125°C
Switching loss vs. Collector current
V
CC
=600V, R
G
=4.7?, V
GE
=±15V
S
w
i
t
c
h
i
n
g
l
o
s
s
:
E
o
n
,
E
o
f
f
,
E
r
r
[
m
J
/
c
y
c
l
e
]
Collector Current : I
C
[A]
E
on
25°C
E
on
125°C
E
off
25°C
E
off
125°C
Fuji Electric GmbH Fuji Electric (UK) Ltd.
Lyoner Stra?e 26Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0Tel.: 0181 - 233 11 30
Fax.:069 - 66 90 29 - 56Fax.:0181 - 233 11 60
Specification is subject to change without notice May 97