ATF-13786中文资料
ATF-13786
Surface Mount Gallium
Arsenide FET for Oscillators Technical Data
85 mil Plastic Surface Mount P ackage
Features
? Low Cost Surface Mount Plastic Package
? High f MAX : 60 GHz Typical ? Low Phase Noise at 10 GHz:-110 dBc/Hz @ 100 kHz Typical ? Output Power at 10 GHz:up to 10 dBm
? Tape-and-Reel Packaging Option Available
Description
Hewlett-Packard’s ATF-13786 is a low cost Gallium Arsenide
Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and
microwave frequency ranges. The ATF-13786 has sufficient gain for easy use as a negative R cell,without excess gain that can lead to unwanted oscillations and
mode jumping. The gate structure used in the fabrication of this device results in phase noise performance superior to that of most other MESFETs. These features make this device
particularly well suited for low power (< +10 dBm) commercial oscillator applications such as are encountered in DBS, TVRO, and MMDS television receivers, or hand-held transceivers operating in the 900 MHz, 2.4 GHz, and 5.7?GHz I SM bands.
Insertion Power Gain, Maximum
Available Gain, and Maximum Stable Gain vs. Frequency.V DS = 3 V, I DS = 40 mA.
Pin Configuration
5
10
15
20
FREQUENCY (GHz)
G A I N
(d B )
25
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250?microns. Proven gold based metallization systems and nitride passivation assure a rugged,
reliable device.
ATF-13786 Electrical Specifications, T C = 25°C, V DS = 3 V , I DS = 40 mA [4]
(unless noted)Symbol Parameters and Test Conditions
Units Min.
Typ.Max.
|S 21|2I nsertion Power Gain
f = 10 GHz dB 6.0P 1 dB Power at 1 dB Gain Compression f = 10 GHz dBm 1516.5G 1 dB 1 dB Compressed Gain f = 10 GHz dB 6.57.5PN Phase Noise (100 kHz offset)[5] f = 10 GHz
dBc/Hz -110g m Transconductance V DS = 3 V , V GS = 0 V mS 2555I DSS Saturated Drain Current V DS = 3 V , V GS = 0 V mA 5070100V P Pinchoff Voltage
V DS = 3 V, I DS = 1 mA
V -2.0-1.5-0.5V BDG
Gate - Drain Breakdown Voltage
I DG = 0.1 mA
V
6.57
Notes:
4.Recommended maximum bias conditions for use as an oscillator.
5.The superior phase noise of this product results from the use of a gate structure optimized for noise performance.Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator.
ATF-13786 Absolute Maximum Ratings
Symbol Parameter Units Absolute Maximum [1]
V DS Drain-Source Voltage V 4V GS Gate-Source Voltage V -4V GD Gate-Drain Voltage V -6I DS Drain Current
mA I DSS P T Power Dissipation [2,3]mW 225T CH Channel Temperature °C 150T STG
Storage Temperature
°C
-65 to +150
Notes:
1.Operation of this device above any one of these conditions may cause permanent damage.
2.T CASE = 25o C (T CASE is defined to be the temperature at the ends of pins 2 and 4 where they contact the circuit board).
3.Derate at 3.1 mW/o C for T C?>?60o C.
Thermal Resistance [2]: θjc = 325°C/W
Typical Scattering Parameters, Common Source, Z O = 50 ?, V DS = 3 V, I DS = 40 mA
S 11
S 21
S 12
S 22
Frequency
GHz
Mag.Ang.Mag.Ang.Mag.Ang.Mag.Ang. 10.97 -23 4.801570.03770.46-13 20.88 -46 4.601350.06660.42-25 30.78 -68 4.351170.08580.36-35 40.67 -95 4.02 950.1147
0.28-48 5
0.57 -125 3.61 750.12370.19-65 60.52 -157 3.20 570.13280.12-93 70.53 176 2.84 410.14210.08-147 80.57 160 2.54 310.14180.10171 90.60 143 2.27 160.14120.15148100.63 130 2.04 40.15 60.19134110.64 117 1.82 -90.14 00.25122120.67 107 1.65-190.14-40.30113130.72 99 1.55-290.14-80.35109140.76 97 1.47-350.14-90.39111150.78
90 1.40-460.14-140.41108160.77 83 1.32-580.14-200.42104170.74 77 1.26-680.14-280.43 9818
0.73
69
1.23
-80
0.14
-36
0.42
93
Part Number Ordering Information
Part Number Devices per Reel
Reel Size ATF-13786-TR110007''ATF-13786-STR
10
strip
Please refer to the “Tape-and-Reel Packaging for Surface Mount Semiconductors” data sheet for more detailed information.
85 mil Plastic Surface Mount Package D imensions
0.51 ±DIMENSIONS ARE IN MILLIMETERS (INCHES)