IRF3710L中文资料

IRF3710S/L

HEXFET ? Power MOSFET

PD -91310C

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D 2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF3710L) is available for low-

profile applications.

Description

5/13/98

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

–––0.75R θJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

Thermal Resistance

°C/W

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 57I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 40A I DM

Pulsed Drain Current 180P D @T A = 25°C Power Dissipation 3.8W P D @T C = 25°C Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS Gate-to-Source Voltage

± 20V E AS Single Pulse Avalanche Energy 530mJ I AR Avalanche Current

28A E AR Repetitive Avalanche Energy 20mJ dv/dt Peak Diode Recovery dv/dt 5.0

V/ns T J Operating Junction and

-55 to + 175T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

l Advanced Process Technology l Surface Mount (IRF3710S)

l Low-profile through-hole (IRF3710L)l 175°C Operating Temperature l Fast Switching

l

Fully Avalanche Rated

2 D Pak

T O -262

IRF3710S/L

IRF3710S/L

IRF3710S/L

IRF3710S/L

IRF3710S/L

IRF3710S/L

IRF3710S/L

IRF3710S/L

IRF3710S/L