P0903BDG

On-State Drain Current 1 I D(ON) V DS = 10V, V GS = 10V 50 A V GS = 4.5V, I D = 20A 11 16 Drain-Source On-State Resistance 1

R DS(ON) V GS = 10V, I D = 25A 7.5 9.5 m Forward Transconductance 1

g fs

V DS = 10V, I D = 25A

32

S

DYNAMIC

Input Capacitance C iss 1200 1800Output Capacitance

C oss 600 1000Reverse Transfer Capacitance C rss

V GS = 0V, V DS = 15V, f = 1MHz 350 500

pF Total Gate Charge 2 Q g 25 50 Gate-Source Charge 2 Q gs 15 Gate-Drain Charge 2 Q gd

V DS = 10V, V GS = 10V, I D = 25A

10

nC Turn-On Delay Time 2 t d(on) 6 16 Rise Time 2

t r V DS = 15V, R L = 1 120 250Turn-Off Delay Time 2

t d(off)

I D ? 50A, V GS = 10V, R GEN = 24

40 90

Fall Time 2

t f 105 200

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 25 °C)

Continuous Current I S 50

Pulsed Current 3 I SM 150 A

Forward Voltage 1 V SD

I S = 25A, V GS = 0V

0.9

1.3

V

Reverse Recovery Time t rr 70 nS Peak Reverse Recovery Current I RM(REC)

I F = I S , dl F /dt = 100A / μS

200 A

Reverse Recovery Charge

Q rr 0.043 μC

1Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2 .

2

Independent of operating temperature. 3

Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH “P0903BDG”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.