BDT29AF中文资料

DESCRIPTION

·DC Current Gain -h FE = 40(Min)@ I C = 0.4A ·Collector-Emitter Sustaining Voltage-

: V CEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF

80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF

·Complement to Type BDT30F/AF/BF/CF/DF

APPLICATIONS

·Designed for use in audio output stages , general purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(T a =25℃)

SYMBOL PARAMETER VALUE

UNIT

BDT29F 80 BDT29AF 100

BDT29BF 120 BDT29CF 140 V CBO

Collector-Base Voltage

BDT29DF 160 V BDT29F 40 BDT29AF 60

BDT29BF 80 BDT29CF 100 V CEO

Collector-Emitter Voltage

BDT29DF 120

V V EBO Emitter-Base Voltage 5 V I C Collector Current-Continuous 1 A I CM Collector Current-Peak 3 A I B

Base Current

0.4

A

P C Collector Power Dissipation T C =25℃

19 W T j Junction Temperature 150 ℃ T stg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Case 9.17℃/W R th j-a

Thermal Resistance,Junction to Ambient

55 ℃/W

ELECTRICAL CHARACTERISTICS

T C =25℃ unless otherwise specified

SYMBOL PARAMETER

CONDITIONS MIN TYP . MAX UNIT

BDT29F 40

BDT29AF 60

BDT29BF 80

BDT29CF 100 V CEO(SUS)

Collector-Emitter

Sustaining Voltage

BDT29DF

I C = 30mA; I B = 0 120 V V CE(sat)Collector-Emitter Saturation Voltage I C = 1A; I B = 0.125A

0.7 V V BE(on)Base-Emitter On Voltage I C = 1A ; V CE = 4V 1.3 V I CES

Collector Cutoff Current

V CE = V CEOmax ; V BE = 0

0.2

mA

BDT29F/AF V CE = 30V; I B = 0

BDT29BF/CF V CE = 60V; I B = 0

I CEO

Collector

Cutoff Current

BDT29DF V CE = 90V; I B = 0

0.1 mA

I EBO Emitter Cutoff Current V EB = 5V; I C = 0 0.2 mA h FE-1DC Current Gain I C = 0.2A ; V CE = 4V 40 h FE-2DC Current Gain

I C = 1A ; V CE = 4V 15 75 f T

Current-Gain—Bandwidth Product

I C = 0.2A ; V CE = 10V

3

MHz

Switching Times

t on Turn-On Time

0.3

μs

t off Turn-Off Time

I C = 1.0A; I B1= -I B2= 0.1A

1.0 μs