IRFS4710PBF中文资料
Notes through are on page 11
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04/22/04
IRFB4710PbF IRFS4710PbF IRFSL4710PbF
HEXFET ?
Power MOSFET
V DSS
R DS(on) max
I D
100V
0.014?
75A
PD- 95146
D 2Pak IRFS4710
TO-220AB
IRFB4710TO-262
IRFSL4710
Parameter
Max.Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 75I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 53A I DM
Pulsed Drain Current 300P D @T A = 25°C Power Dissipation 3.8W P D @T C = 25°C Power Dissipation 200Linear Derating Factor 1.4W/°C V GS Gate-to-Source Voltage ± 20V dv/dt Peak Diode Recovery dv/dt 8.2V/ns T J Operating Junction and -55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Mounting torqe, 6-32 or M3 screw 10 lbf?in (1.1N?m)
Absolute Maximum Ratings
l High frequency DC-DC converters l Motor Control
l Uninterrutible Power Supplies l Lead-Free Benefits
Applications
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
Thermal Resistance
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
–––0.74R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/W
R θJA Junction-to-Ambient –––62R θJA
Junction-to-Ambient
–––
40
IRFB/IRFS/IRFL4710PbF
Static @ T J = 25°C (unless otherwise specified)
Parameter Min.Typ.Max.Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage 100––––––V V GS = 0V, I D = 250μA
?V (BR)DSS /?T J Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I D = 1mA R DS(on)Static Drain-to-Source On-Resistance –––0.0110.014?V GS = 10V, I D = 45A V GS(th)Gate Threshold Voltage 3.5––– 5.5V V DS = V GS , I D = 250μA
–––––– 1.0μA
V DS = 95V, V GS = 0V
––––––250V DS = 80V, V GS = 0V, T J = 150°C
Gate-to-Source Forward Leakage ––––––100V GS = 20V
Gate-to-Source Reverse Leakage ––––––-100nA V GS = -20V
I GSS
I DSS Drain-to-Source Leakage Current
IRFB/IRFS/IRFL4710PbF
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Vs. Temperature
IRFB/IRFS/IRFL4710PbF
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Fig 8. Maximum Safe Operating Area
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Forward Voltage
1
10
100
V DS , Drain-to-Source Voltage (V)
02000
4000
6000
8000
10000
C , C a p a c i t a n c e (p F )
1
10
1001000
V DS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A )
IRFB/IRFS/IRFL4710PbF
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Fig 10a.
Switching Time Test Circuit
V V d(on)
r
d(off)
f
Fig 10b. Switching Time Waveforms
V DD
Case Temperature
IRFB/IRFS/IRFL4710PbF
6
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V
DS
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
I A S
V D D
R
IRFB/IRFS/IRFL4710PbF
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Fig 14. For N-Channel HEXFET ? Power MOSFETs
* V GS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
V DD
IRFB/IRFS/IRFL4710PbF
TO-220AB Package Outline Dimensions are shown in millimeters (inches)
D2Pak Package Outline Dimensions are shown in millimeters (inches)
IRFB/IRFS/IRFL4710PbF
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This is only applied to TO-220AB package
Repetitive rating; pulse width limited by
max. junction temperature.
I SD ≤ 45A, di/dt ≤ 420A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
Notes:
Starting T J = 25°C, L = 190μH
R G = 25?, I AS = 45A, V GS = 10V
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C oss eff. is a fixed capacitance that gives the same charging time
as C oss while V DS is rising from 0 to 80% V DSS
This is applied to D 2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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D 2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
T R R
F E E D D IR E C T IO N
1.85 (.073)1.65 (.065) 1.60 (.063)1.50 (.059)
4.10 (.161)3.90 (.153)
T R L
F E E D D IRE C T IO N
10.90 (.429)10.70 (.421)
16.10(.634)15.90(.626)
1.75 (.069)1.25 (.049)
11.60 (.457)11.40 (.449)
15.42 (.609)15.22 (.601)
4.72 (.136)4.52 (.178)
24.30(.957)23.90(.941)
0.368 (.0145)0.342 (.0135)
1.60 (.063)1.50 (.059)
13.50 (.532)12.80 (.504)330.00(14.173) MAX.
27.40 (1.079)23.90 (.941)
60.00 (2.362) M IN.
30.40 (1.197) M A X.
26.40 (1.039)24.40 (.961)
N O T E S :
1. C O M F O R M S T O E IA-418.
2. C O N T R O L L IN G D IM E N S IO N : M ILL IM E T E R.
3. D IM E N S IO N M E A S U R E D @ H U B.
4. IN C L U D E S F L A N G E D IS T O R T IO N @O U T E R E D G E.
Note: For the most current drawings please refer to the IR website at:
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