DDR Goodphase Test

0x1200=FF1F0x1200=801F0x1200=801F

0x1212=40440x1212=40040x1212=4040

0x110D_30=2EFF0x110D_30=6B0E0x110D_30=EB85

0x110D_32=001A0x110D_32=001F0x110D_32=0019

0x110D_34=03000x110D_34=03000x110D_34=0300

0x110D_36=40000x110D_36=40000x110D_36=4005

0x110D_38=00440x110D_38=33770x110D_38=4488

0x110D_3A=00020x110D_3A=00000x110D_3A=0000

0x110D_3C=1F000x110D_3C=06330x110D_3C=0077

0x110D_3E=10100x110D_3E=00660x110D_3E=0000

0x110D_6E=67670x110D_6E=00670x110D_6E=8788

0x110D_EE=77680x110D_EE=00680x110D_EE=7788

0x110D_E0=23700x110D_E0=A3700x110D_E0=2370 Driving Strength315

Trigger Level455

ODT(IC side)ON/ 90ΩON/120ΩON/ 90ΩBoard Number MST026B-10AFV MST026B-10AFV MST026B-10AFV IC number/version MST6A801MST6A801MST6A801 Core power on pin 1.05V 1.05V 1.05V

DDR2 DRAM Voltage 1.8V 1.8V 1.8V Testing Temperature25℃115℃-30℃

DDR3 Data Rate1582Mbps1320Mbps1154Mbps MIU0 DQSM Phase DQM0:7.9～0.1 3.6～1.6DQM0:7.8～6.2

3.6～1.6DQM1:7.8～6.2 MIU0 CLK/CMD Phase0.249～-0.10 1.0～-0.7 1.0～-0.2 Write DQS/DQ good

phase(MIU0)DQS0:-14.119～-14.50.8～0.2DQS0:0.6～0.3 Write DQS/DQ good

phase(MIU0)0.8～0.2DQS1:0.6～0.3

DOS0:7～F DOS0:3～C DOS0:5～B

DQS/DQ Good Phase(MIU0)DOS1:6～F DOS1:1～A DOS1:3～9

DOS0:5～E DOS2:3～A

DOS1:4～E DOS3:4～A

DDR3 Data Rate1582Mbps1320Mbps1600Mbps MIU1 DQSM Phase DQM0:7.31～7.4 3.5～1.5DQM0:7.7～6.3

3.5～1.5

MIU1 CLK/CMD Phase0.5～0.240 1.0～-0.6 1.0～-0.4 Write DQS/DQ good

phase(MIU1)DQ0:-14.119～-49.80.7～0.3DQ0:0.7～0.2

0.7～0.3

DOS0:0～F DOS0:3～C DOS0:4～B

DQS/DQ Good Phase(MIU1)DOS1:0～F DOS1:1～A DOS1:4～A

Samsung

K4B1G1646G-BCH9

DDR3 Brand Registers

Samsung

K4B1G1646G-BCH9

Samsung

K4B1G1646G-BCH9

DOS0:5～E

DOS1:4～E

CLK+/-222222 DQ222222 DQS0-1222222 DQM0-1222222 Address222222 BA0&1222222 CAS222222 RAS222222 WEZ222222

2R1C56Ω+10nF56Ω+10nF56Ω+10nF